WebCPC CPC COOPERATIVE PATENT CLASSIFICATION

H01L　SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR (use of semiconductor devices for measuring G01; resistors in general H01C; magnets, inductors {in general}, transformers H01F; capacitors in general H01G; electrolytic devices H01G 9/00; batteries, accumulators H01M; waveguides, resonators or lines of the waveguide type H01P; line connectors, current collectors H01R; stimulated emission devices H01S; electromechanical resonators H03H; loudspeakers, microphones, gramophone pick-ups or like acoustic electromechanical transducers H04R; electric light sources in general H05B; printed circuits, hybrid circuits, casings or constructional details of electric apparatus, manufacture of assemblages of electrical components H05K; use of semiconductor devices in circuits having a particular application, see the subclass for the application)

H01L 21/00 Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof ({testing or measuring during manufacture or treatment, or reliability measurements H01L 22/00; multistep manufacturing processes for passive two-terminal components without a potential-jump or surface barrier for integrated circuits H01L 28/00;}(processes or apparatus peculiar to the manufacture or treatment of devices provided for in groups H01L 31/00 to H01L 51/00 or of parts thereof, see these groups; single-step processes covered by other subclasses, see the relevant subclasses, e.g. C23C, C30B; photomechanical production of textured or patterned surfaces, materials or originals therefor, apparatus specially adapted therefor, in general G03F))

H01L 21/02 ・Manufacture or treatment of semiconductor devices or of parts thereof

H01L 21/02002 ・・{Preparing wafers}

H01L 21/02005 ・・・{Preparing bulk and homogeneous wafers}

H01L 21/02008 ・・・・{Multistep processes}

H01L 21/0201 ・・・・・{Specific process step}

H01L 21/02013 ・・・・・・{Grinding, lapping}

H01L 21/02016 ・・・・・・{Backside treatment}

H01L 21/02019 ・・・・・・{Chemical etching}

H01L 21/02021 ・・・・・・{Edge treatment, chamfering}

H01L 21/02024 ・・・・・・{Mirror polishing}

H01L 21/02027 ・・・・{Setting crystal orientation}

H01L 21/0203 ・・・・{Making porous regions on the surface}

H01L 21/02032 ・・・・{by reclaiming or re-processing}

H01L 21/02035 ・・・・{Shaping}

H01L 21/02038 ・・・{Preparing wafers having an insulating layer, e.g. SOI wafers}

H01L 21/02041 ・・{Cleaning}

H01L 21/02043 ・・・{Cleaning before device manufacture, i.e. Begin-Of-Line process}

H01L 21/02046 ・・・・{Dry cleaning only (H01L 21/02085 takes precedence)}

H01L 21/02049 ・・・・・{with gaseous HF}

H01L 21/02052 ・・・・{Wet cleaning only (H01L 21/02085 takes precedence)}

H01L 21/02054 ・・・・{combining dry and wet cleaning steps (H01L 21/02085 takes precedence)}

H01L 21/02057 ・・・{Cleaning during device manufacture}

H01L 21/0206 ・・・・{during, before or after processing of insulating layers}

H01L 21/02063 ・・・・・{the processing being the formation of vias or contact holes}

H01L 21/02065 ・・・・・{the processing being a planarization of insulating layers}

H01L 21/02068 ・・・・{during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers}

H01L 21/02071 ・・・・・{the processing being a delineation, e.g. RIE, of conductive layers}

H01L 21/02074 ・・・・・{the processing being a planarization of conductive layers}

H01L 21/02076 ・・・{Cleaning after the substrates have been singulated}

H01L 21/02079 ・・・{Cleaning for reclaiming}

H01L 21/02082 ・・・{product to be cleaned}

H01L 21/02085 ・・・・{Cleaning of diamond}

H01L 21/02087 ・・・・{Cleaning of wafer edges}

H01L 21/0209 ・・・・{Cleaning of wafer backside}

H01L 21/02093 ・・・・{Cleaning of porous materials}

H01L 21/02096 ・・・{only mechanical cleaning}

H01L 21/02098 ・・・{only involving lasers, e.g. laser ablation}

H01L 21/02101 ・・・{only involving supercritical fluids}

H01L 21/02104 ・・{Forming layers (deposition in general C23C; crystal growth in general C30B)}

H01L 21/02107 ・・・{Forming insulating materials on a substrate}

H01L 21/02109 ・・・・{characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates}

H01L 21/02112 ・・・・・{characterised by the material of the layer}

H01L 21/02115 ・・・・・・{the material being carbon, e.g. alpha-C, diamond or hydrogen doped carbon}

H01L 21/02118 ・・・・・・{carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC (polymers per se C08G, photoresist per se G03F)}

H01L 21/0212 ・・・・・・・{the material being fluoro carbon compounds, e.g. (CFx)}n,(CHxFy)n or polytetrafluoroethylene]

H01L 21/02123 ・・・・・・{the material containing silicon}

H01L 21/02126 ・・・・・・・{the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC}

H01L 21/02129 ・・・・・・・・{the material being boron or phosphorus doped silicon oxides, e.g. BPSG, BSG or PSG}

H01L 21/02131 ・・・・・・・・{the material being halogen doped silicon oxides, e.g. FSG}

H01L 21/02134 ・・・・・・・・{the material comprising hydrogen silsesquioxane, e.g. HSQ}

H01L 21/02137 ・・・・・・・・{the material comprising alkyl silsesquioxane, e.g. MSQ}

H01L 21/0214 ・・・・・・・・{the material being a silicon oxynitride, e.g. SiON or SiON:H}

H01L 21/02142 ・・・・・・・{the material containing silicon and at least one metal element, e.g. metal silicate based insulators or metal silicon oxynitrides}

H01L 21/02145 ・・・・・・・・{the material containing aluminium, e.g. AlSiOx}

H01L 21/02148 ・・・・・・・・{the material containing hafnium, e.g. HfSiOx or HfSiON}

H01L 21/0215 ・・・・・・・・{the material containing tantalum, e.g. TaSiOx}

H01L 21/02153 ・・・・・・・・{the material containing titanium, e.g. TiSiOx}

H01L 21/02156 ・・・・・・・・{the material containing at least one rare earth element, e.g. silicate of lanthanides, scandium or yttrium}

H01L 21/02159 ・・・・・・・・{the material containing zirconium, e.g. ZrSiOx}

H01L 21/02161 ・・・・・・・・{the material containing more than one metal element}

H01L 21/02164 ・・・・・・・{the material being a silicon oxide, e.g. SiO2}

H01L 21/02167 ・・・・・・・{the material being a silicon carbide not containing oxygen, e.g. SiC, SiC:H or silicon carbonitrides (H01L 21/02126 and H01L 21/0214 take precedence)}

H01L 21/0217 ・・・・・・・{the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz (H01L 21/02126 and H01L 21/0214 take precedence)}

H01L 21/02172 ・・・・・・{the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides (materials containing silicon H01L 21/02123; metal silicates H01L 21/02142)}

H01L 21/02175 ・・・・・・・{characterised by the metal (H01L 21/02197 takes precedence)}

H01L 21/02178 ・・・・・・・・{the material containing aluminium, e.g. Al2O3}

H01L 21/02181 ・・・・・・・・{the material containing hafnium, e.g. HfO2}

H01L 21/02183 ・・・・・・・・{the material containing tantalum, e.g. Ta2O5}

H01L 21/02186 ・・・・・・・・{the material containing titanium, e.g. TiO2}

H01L 21/02189 ・・・・・・・・{the material containing zirconium, e.g. ZrO2}

H01L 21/02192 ・・・・・・・・{the material containing at least one rare earth metal element, e.g. oxides of lanthanides, scandium or yttrium}

H01L 21/02194 ・・・・・・・・{the material containing more than one metal element}

H01L 21/02197 ・・・・・・・{the material having a perovskite structure, e.g. BaTiO3}

H01L 21/022 ・・・・・{the layer being a laminate, i.e. composed of sublayers, e.g. stacks of alternating high-k metal oxides (adhesion layers or buffer layersH01L 21/02304, H01L 21/02362)}

H01L 21/02203 ・・・・・{the layer being porous}

H01L 21/02205 ・・・・・{the layer being characterised by the precursor material for deposition}

H01L 21/02208 ・・・・・・{the precursor containing a compound comprising Si}

H01L 21/02211 ・・・・・・・{the compound being a silane, e.g. disilane, methylsilane or chlorosilane}

H01L 21/02214 ・・・・・・・{the compound comprising silicon and oxygen}

H01L 21/02216 ・・・・・・・・{the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane}

H01L 21/02219 ・・・・・・・{the compound comprising silicon and nitrogen}

H01L 21/02222 ・・・・・・・・{the compound being a silazane}

H01L 21/02225 ・・・・{characterised by the process for the formation of the insulating layer}

H01L 21/02227 ・・・・・{formation by a process other than a deposition process}

H01L 21/0223 ・・・・・・{formation by oxidation, e.g. oxidation of the substrate}

H01L 21/02233 ・・・・・・・{of the semiconductor substrate or a semiconductor layer}

H01L 21/02236 ・・・・・・・・{group IV semiconductor}

H01L 21/02238 ・・・・・・・・・{silicon in uncombined form, i.e. pure silicon}

H01L 21/02241 ・・・・・・・・{III-V semiconductor}

H01L 21/02244 ・・・・・・・{of a metallic layer}

H01L 21/02247 ・・・・・・{formation by nitridation, e.g. nitridation of the substrate}

H01L 21/02249 ・・・・・・{formation by combined oxidation and nitridation performed simultaneously}

H01L 21/02252 ・・・・・・{formation by plasma treatment, e.g. plasma oxidation of the substrate (after treatment of an insulating film by plasma H01L 21/3105 and subgroups)}

H01L 21/02255 ・・・・・・{formation by thermal treatment (H01L 21/02252 takes precedence; after treatment of an insulating film H01L 21/3105 and subgroups)}

H01L 21/02258 ・・・・・・{formation by anodic treatment, e.g. anodic oxidation}

H01L 21/0226 ・・・・・{formation by a deposition process (per se C23C)}

H01L 21/02263 ・・・・・・{deposition from the gas or vapour phase}

H01L 21/02266 ・・・・・・・{deposition by physical ablation of a target, e.g. sputtering, reactive sputtering, physical vapour deposition or pulsed laser deposition}

H01L 21/02269 ・・・・・・・{deposition by thermal evaporation, H01L 21/02293 takes precedence}

H01L 21/02271 ・・・・・・・{deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition (H01L 21/02266 takes precedence)}

H01L 21/02274 ・・・・・・・・{in the presence of a plasma (PECVD)}

H01L 21/02277 ・・・・・・・・{the reactions being activated by other means than plasma or thermal, e.g. photo-CVD}

H01L 21/0228 ・・・・・・・・{deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD}

H01L 21/02282 ・・・・・・{liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating}

H01L 21/02285 ・・・・・・・{Langmuir-Blodgett techniques}

H01L 21/02288 ・・・・・・・{printing, e.g. ink-jet printing (per se B41J)}

H01L 21/0229 ・・・・・・・{liquid atomic layer deposition}

H01L 21/02293 ・・・・・・{formation of epitaxial layers by a deposition process(epitaxial growth per se C30B)}

H01L 21/02296 ・・・・{characterised by the treatment performed before or after the formation of the layer (H01L 21/02227 and subgroups take precedence)}

H01L 21/02299 ・・・・・{pre-treatment}

H01L 21/02301 ・・・・・・{in-situ cleaning}

H01L 21/02304 ・・・・・・{formation of intermediate layers, e.g. buffer layers, layers to improve adhesion, lattice match or diffusion barriers}

H01L 21/02307 ・・・・・・{treatment by exposure to a liquid}

H01L 21/0231 ・・・・・・{treatment by exposure to electromagnetic radiation, e.g. UV light}

H01L 21/02312 ・・・・・・{treatment by exposure to a gas or vapour}

H01L 21/02315 ・・・・・・・{treatment by exposure to a plasma}

H01L 21/02318 ・・・・・{post-treatment}

H01L 21/02321 ・・・・・・{introduction of substances into an already existing insulating layer; H01L 21/02227 and subgroups take precedence}

H01L 21/02323 ・・・・・・・{introduction of oxygen}

H01L 21/02326 ・・・・・・・・{into a nitride layer, e.g. changing SiN to SiON}

H01L 21/02329 ・・・・・・・{introduction of nitrogen}

H01L 21/02332 ・・・・・・・・{into an oxide layer, e.g. changing SiO to SiON}

H01L 21/02334 ・・・・・・{in-situ cleaning after layer formation, e.g. removing process residues (cleaning compositions per se C30D; cleaning in general B08B)}

H01L 21/02337 ・・・・・・{treatment by exposure to a gas or vapour}

H01L 21/0234 ・・・・・・・{treatment by exposure to a plasma}

H01L 21/02343 ・・・・・・{treatment by exposure to a liquid}

H01L 21/02345 ・・・・・・{treatment by exposure to radiation, e.g. visible light}

H01L 21/02348 ・・・・・・・{treatment by exposure to UV light}

H01L 21/02351 ・・・・・・・{treatment by exposure to corpuscular radiation, e.g. exposure to electrons, alpha-particles, protons or ions}

H01L 21/02354 ・・・・・・・{using a coherent radiation, e.g. a laser}

H01L 21/02356 ・・・・・・{treatment to change the morphology of the insulating layer, e.g. transformation of an amorphous layer into a crystalline layer}

H01L 21/02359 ・・・・・・{treatment to change the surface groups of the insulating layer}

H01L 21/02362 ・・・・・・{formation of intermediate layers, e.g. capping layers or diffusion barriers}

H01L 21/02365 ・・・{Forming inorganic semiconducting materials on a substrate (for light-sensitive devices H01L 31/00)}

H01L 21/02367 ・・・・{Substrates}

H01L 21/0237 ・・・・・{Materials}

H01L 21/02373 ・・・・・・{Group 14 semiconducting materials}

H01L 21/02376 ・・・・・・・{Carbon, e.g. diamond-like carbon}

H01L 21/02378 ・・・・・・・{Silicon carbide}

H01L 21/02381 ・・・・・・・{Silicon, silicon germanium, germanium}

H01L 21/02384 ・・・・・・・{including tin}

H01L 21/02387 ・・・・・・{Group 13/15 materials}

H01L 21/02389 ・・・・・・・{Nitrides}

H01L 21/02392 ・・・・・・・{Phosphides}

H01L 21/02395 ・・・・・・・{Arsenides}

H01L 21/02398 ・・・・・・・{Antimonides}

H01L 21/024 ・・・・・・{Group 12/16 materials}

H01L 21/02403 ・・・・・・・{Oxides}

H01L 21/02406 ・・・・・・・{Sulfides}

H01L 21/02409 ・・・・・・・{Selenides}

H01L 21/02411 ・・・・・・・{Tellurides}

H01L 21/02414 ・・・・・・{Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds}

H01L 21/02417 ・・・・・・{Chalcogenide semiconducting materials not being oxides, e.g. ternary compounds}

H01L 21/0242 ・・・・・・{Crystalline insulating materials}

H01L 21/02422 ・・・・・・{Non-crystalline insulating materials, e.g. glass, polymers}

H01L 21/02425 ・・・・・・{Conductive materials, e.g. metallic silicides}

H01L 21/02428 ・・・・・{Structure}

H01L 21/0243 ・・・・・・{Surface structure}

H01L 21/02433 ・・・・・{Crystal orientation}

H01L 21/02436 ・・・・{Intermediate layers between substrates and deposited layers}

H01L 21/02439 ・・・・・{Materials}

H01L 21/02441 ・・・・・・{Group 14 semiconducting materials}

H01L 21/02444 ・・・・・・・{Carbon, e.g. diamond-like carbon}

H01L 21/02447 ・・・・・・・{Silicon carbide}

H01L 21/0245 ・・・・・・・{Silicon, silicon germanium, germanium}

H01L 21/02452 ・・・・・・・{including tin}

H01L 21/02455 ・・・・・・{Group 13/15 materials}

H01L 21/02458 ・・・・・・・{Nitrides}

H01L 21/02461 ・・・・・・・{Phosphides}

H01L 21/02463 ・・・・・・・{Arsenides}

H01L 21/02466 ・・・・・・・{Antimonides}

H01L 21/02469 ・・・・・・{Group 12/16 materials}

H01L 21/02472 ・・・・・・・{Oxides}

H01L 21/02474 ・・・・・・・{Sulfides}

H01L 21/02477 ・・・・・・・{Selenides}

H01L 21/0248 ・・・・・・・{Tellurides}

H01L 21/02483 ・・・・・・{Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds}

H01L 21/02485 ・・・・・・{Other chalcogenide semiconducting materials not being oxides, e.g. ternary compounds}

H01L 21/02488 ・・・・・・{Insulating materials}

H01L 21/02491 ・・・・・・{Conductive materials}

H01L 21/02494 ・・・・・{Structure}

H01L 21/02496 ・・・・・・{Layer structure}

H01L 21/02499 ・・・・・・・{Monolayers}

H01L 21/02502 ・・・・・・・{consisting of two layers}

H01L 21/02505 ・・・・・・・{consisting of more than two layers}

H01L 21/02507 ・・・・・・・・{Alternating layers, e.g. superlattice}

H01L 21/0251 ・・・・・・・{Graded layers}

H01L 21/02513 ・・・・・・{Microstructure}

H01L 21/02516 ・・・・・{Crystal orientation}

H01L 21/02518 ・・・・{Deposited layers}

H01L 21/02521 ・・・・・{Materials}

H01L 21/02524 ・・・・・・{Group 14 semiconducting materials}

H01L 21/02527 ・・・・・・・{Carbon, e.g. diamond-like carbon}

H01L 21/02529 ・・・・・・・{Silicon carbide}

H01L 21/02532 ・・・・・・・{Silicon, silicon germanium, germanium}

H01L 21/02535 ・・・・・・・{including tin}

H01L 21/02538 ・・・・・・{Group 13/15 materials}

H01L 21/0254 ・・・・・・・{Nitrides}

H01L 21/02543 ・・・・・・・{Phosphides}

H01L 21/02546 ・・・・・・・{Arsenides}

H01L 21/02549 ・・・・・・・{Antimonides}

H01L 21/02551 ・・・・・・{Group 12/16 materials}

H01L 21/02554 ・・・・・・・{Oxides}

H01L 21/02557 ・・・・・・・{Sulfides}

H01L 21/0256 ・・・・・・・{Selenides}

H01L 21/02562 ・・・・・・・{Tellurides}

H01L 21/02565 ・・・・・・{Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds}

H01L 21/02568 ・・・・・・{Chalcogenide semiconducting materials not being oxides, e.g. ternary compounds}

H01L 21/0257 ・・・・・{Doping during depositing}

H01L 21/02573 ・・・・・・{Conductivity type}

H01L 21/02576 ・・・・・・・{N-type}

H01L 21/02579 ・・・・・・・{P-type}

H01L 21/02581 ・・・・・・・{Transition metal or rare earth elements}

H01L 21/02584 ・・・・・・{Delta-doping}

H01L 21/02587 ・・・・・{Structure}

H01L 21/0259 ・・・・・・{Microstructure}

H01L 21/02592 ・・・・・・・{amorphous}

H01L 21/02595 ・・・・・・・{polycrystalline}

H01L 21/02598 ・・・・・・・{monocrystalline}

H01L 21/02601 ・・・・・・・{Nanoparticles (fullerenes H01L 51/0046)}

H01L 21/02603 ・・・・・・・{Nanowires}

H01L 21/02606 ・・・・・・・{Nanotubes (carbon nanotubes H01L 51/0048)}

H01L 21/02609 ・・・・・{Crystal orientation}

H01L 21/02612 ・・・・{Formation types}

H01L 21/02614 ・・・・・{Transformation of metal, e.g. oxidation, nitridation}

H01L 21/02617 ・・・・・{Deposition types}

H01L 21/0262 ・・・・・・{Reduction or decomposition of gaseous compounds, e.g. CVD}

H01L 21/02623 ・・・・・・{Liquid deposition}

H01L 21/02625 ・・・・・・・{using melted materials}

H01L 21/02628 ・・・・・・・{using solutions}

H01L 21/02631 ・・・・・・{Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation}

H01L 21/02634 ・・・・・・{Homoepitaxy}

H01L 21/02636 ・・・・・・{Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials}

H01L 21/02639 ・・・・・・・{Preparation of substrate for selective deposition}

H01L 21/02642 ・・・・・・・・{Mask materials other than SiO2 or SiN}

H01L 21/02645 ・・・・・・・・{Seed materials}

H01L 21/02647 ・・・・・・・{Lateral overgrowth}

H01L 21/0265 ・・・・・・・・{Pendeoepitaxy}

H01L 21/02653 ・・・・・・・{Vapour-liquid-solid growth}

H01L 21/02656 ・・・・{Special treatments}

H01L 21/02658 ・・・・・{Pretreatments (cleaning in general H01L 21/02041)}

H01L 21/02661 ・・・・・・{In-situ cleaning}

H01L 21/02664 ・・・・・{Aftertreatments (planarisation in general H01L 21/304)}

H01L 21/02667 ・・・・・・{Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth}

H01L 21/02669 ・・・・・・・{using crystallisation inhibiting elements}

H01L 21/02672 ・・・・・・・{using crystallisation enhancing elements}

H01L 21/02675 ・・・・・・・{using laser beams}

H01L 21/02678 ・・・・・・・・{Beam shaping, e.g. using a mask}

H01L 21/0268 ・・・・・・・・・{Shape of mask}

H01L 21/02683 ・・・・・・・・{Continuous wave laser beam}

H01L 21/02686 ・・・・・・・・{Pulsed laser beam}

H01L 21/02689 ・・・・・・・{using particle beams}

H01L 21/02691 ・・・・・・・{Scanning of a beam}

H01L 21/02694 ・・・・・・{Controlling the interface between substrate and epitaxial layer, e.g. by ion implantation followed by annealing}

H01L 21/02697 ・・・{Forming conducting materials on a substrate}

H01L 21/027 ・・Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L 21/18 or H01L 21/34{(photographic masks or originals per se G03F 1/00; registration or positioning of photographic masks or originals G03F 9/00; photographic cameras G03B; control of position G05D 3/00)}

H01L 21/0271 ・・・{comprising organic layers}

H01L 21/0272 ・・・・{for lift-off processes}

H01L 21/0273 ・・・・{characterised by the treatment of photoresist layers}

H01L 21/0274 ・・・・・{Photolithographic processes}

H01L 21/0275 ・・・・・・{using lasers}

H01L 21/0276 ・・・・・・{using an anti-reflective coating (anti-reflective coating for lithography in general G03F 7/09)}

H01L 21/0277 ・・・・・{Electrolithographic processes}

H01L 21/0278 ・・・・・{Rontgenlithographic or X-ray lithographic processes}

H01L 21/0279 ・・・・・{Ionlithographic processes}

H01L 21/033 ・・・comprising inorganic layers

H01L 21/0331 ・・・・{for lift-off processes}

H01L 21/0332 ・・・・{characterised by their composition, e.g. multilayer masks, materials}

H01L 21/0334 ・・・・{characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane}

H01L 21/0335 ・・・・・{characterised by their behaviour during the process, e.g. soluble masks, redeposited masks}

H01L 21/0337 ・・・・・{characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment}

H01L 21/0338 ・・・・・{Process specially adapted to improve the resolution of the mask}

H01L 21/04 ・・the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer {(multistep processes specially adapted for the manufacture of said devices H01L 29/66007, H01L 29/401; details of semiconductor bodies H01L 29/02)}

H01L 21/0405 ・・・{the devices having semiconductor bodies comprising semiconducting carbon, e.g. diamond, diamond-like carbon (multistep processes for the manufacture of said devices H01L 29/66015)}

H01L 21/041 ・・・・{Making n- or p-doped regions}

H01L 21/0415 ・・・・・{using ion implantation}

H01L 21/042 ・・・・N: Changing their shape, e.g. forming recesses (etching of the semiconductor body H01L 21/302)]

H01L 21/0425 ・・・・{Making electrodes}

H01L 21/043 ・・・・・{Ohmic electrodes}

H01L 21/0435 ・・・・・{Schottky electrodes}

H01L 21/044 ・・・・・{Conductor-insulator-semiconductor electrodes}

H01L 21/0445 ・・・{the devices having semiconductor bodies comprising crystalline silicon carbide (multistep processes for the manufacture of said devices H01L 29/66053)}

H01L 21/045 ・・・・{passivating silicon carbide surfaces}

H01L 21/0455 ・・・・{Making n or p doped regions or layers, e.g. using diffusion}

H01L 21/046 ・・・・・{using ion implantation}

H01L 21/0465 ・・・・・・{using masks}

H01L 21/047 ・・・・・・{characterised by the angle between the ion beam and the crystal planes or the main crystal surface}

H01L 21/0475 ・・・・{Changing the shape of the semiconductor body, e.g. forming recesses, (etching of the semiconductor body H01L 21/302)}

H01L 21/048 ・・・・{Making electrodes}

H01L 21/0485 ・・・・・{Ohmic electrodes}

H01L 21/049 ・・・・・{Conductor-insulator-semiconductor electrodes, e.g. MIS contacts}

H01L 21/0495 ・・・・・{Schottky electrodes}

H01L 21/06 ・・・the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials

H01L 21/08 ・・・・Preparation of the foundation plate

H01L 21/10 ・・・・Preliminary treatment of the selenium or tellurium, its application to the foundation plate, or the subsequent treatment of the combination

H01L 21/101 ・・・・・{Application of the selenium or tellurium to the foundation plate}

H01L 21/103 ・・・・・Conversion of the selenium or tellurium to the conductive state

H01L 21/105 ・・・・・Treatment of the surface of the selenium or tellurium layer after having been made conductive

H01L 21/108 ・・・・・Provision of discrete insulating layers, i.e. non-genetic barrier layers

H01L 21/12 ・・・・Application of an electrode to the exposed surface of the selenium or tellurium after the selenium or tellurium has been applied to the foundation plate

H01L 21/14 ・・・・Treatment of the complete device, e.g. by electroforming to form a barrier

H01L 21/145 ・・・・・Ageing

H01L 21/16 ・・・the devices having semiconductor bodies comprising cuprous oxide or cuprous iodide

H01L 21/161 ・・・・{Preparation of the foundation plate, preliminary treatment oxidation of the foundation plate, reduction treatment}

H01L 21/162 ・・・・・{Preliminary treatment of the foundation plate}

H01L 21/164 ・・・・・{Oxidation and subsequent heat treatment of the foundation plate (H01L 21/165 takes precedence)}

H01L 21/165 ・・・・・{Reduction of the copper oxide, treatment of the oxide layer}

H01L 21/167 ・・・・・{Application of a non-genetic conductive layer}

H01L 21/168 ・・・・{Treatment of the complete device, e.g. electroforming, ageing}

H01L 21/18 ・・・the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials {(H01L 21/041 to H01L 21/0425, H01L 21/045 to H01L 21/048 take precedence)}

H01L 21/182 ・・・・{Intermixing or interdiffusion or disordering of III-V heterostructures, e.g. IILD}

H01L 21/185 ・・・・{Joining of semiconductor bodies for junction formation}

H01L 21/187 ・・・・・{by direct bonding}

H01L 21/20 ・・・・Deposition of semiconductor materials on a substrate, e.g. epitaxial growth {solid phase epitaxy}

H01L 21/2003 ・・・・・{Characterised by the substrate (H01L 21/203, H01L 21/205, H01L 21/208 take precedence)}

H01L 21/2007 ・・・・・・{Bonding of semiconductor wafers to insulating substrates or to semiconducting substrates using an intermediate insulating layer (H01L 21/2011 takes precedence; bonding of semiconductor wafers to semiconductor wafers for junction formation H01L 21/187)}

H01L 21/2011 ・・・・・・{the substrate being of crystalline insulating material, e.g. sapphire}

H01L 21/2015 ・・・・・・{the substrate being of crystalline semiconductor material, e.g. lattice adaptation, heteroepitaxy}

H01L 21/2018 ・・・・・{Selective epilaxial growth, e.g. simultaneous deposition of mono - and non-mono semiconductor materials}

H01L 21/2022 ・・・・・{Epitaxial regrowth of non-monocrystalline semiconductor materials, e.g. lateral epitaxy by seeded solidification, solid-state crystallization, solid-state graphoepitaxy, explosive crystallization, grain growth in polycrystalline materials}

H01L 21/2026 ・・・・・・{using a coherent energy beam, e.g. laser or electron beam}

H01L 21/203 ・・・・・using physical deposition, e.g. vacuum deposition, sputtering

H01L 21/2033 ・・・・・・{Epitaxial deposition of elements of the Fourth Group of the Periodic System, e.g. Si, Ge}

H01L 21/2036 ・・・・・・{Epitaxial deposition of AIII BV compounds}

H01L 21/205 ・・・・・using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition

H01L 21/2053 ・・・・・・{Expitaxial deposition of elements of the Fourth Group of the Periodic System, e.g. Si, Ge}

H01L 21/2056 ・・・・・・{Epitaxial deposition of AIIIBV compounds}

H01L 21/208 ・・・・・using liquid deposition

H01L 21/2085 ・・・・・・{Epitaxial deposition of AIIIBV compounds}

H01L 21/22 ・・・・Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; {Interactions between two or more impurities; Redistribution of impurities}

H01L 21/2205 ・・・・・{from the substrate during epitaxy, e.g. autodoping; Preventing or using autodoping}

H01L 21/221 ・・・・・{of killers}

H01L 21/2215 ・・・・・・{in AIIIBV compounds}

H01L 21/222 ・・・・・{Lithium-drift}

H01L 21/2225 ・・・・・{Diffusion sources}

H01L 21/223 ・・・・・using diffusion into or out of a solid from or into a gaseous phase {(H01L 21/221 to H01L 21/222 take precedence; diffusion through an applied layer H01L 21/225)}

H01L 21/2233 ・・・・・・{Diffusion into or out of AIIIBV compounds}

H01L 21/2236 ・・・・・・{from or into a plasma phase}

H01L 21/225 ・・・・・using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer {(H01L 21/221 to H01L 21/222 take precedence)}

H01L 21/2251 ・・・・・・{Diffusion into or out of group IV semiconductors}

H01L 21/2252 ・・・・・・・{using predeposition of impurities into the semiconductor surface, e.g. from a gaseous phase}

H01L 21/2253 ・・・・・・・・{by ion implantation}

H01L 21/2254 ・・・・・・・{from or through or into an applied layer, e.g. photoresist, nitrides}

H01L 21/2255 ・・・・・・・・{the applied layer comprising oxides only, e.g. P2O5, PSG, H3BO3, doped oxides}

H01L 21/2256 ・・・・・・・・・{through the applied layer}

H01L 21/2257 ・・・・・・・・{the applied layer being silicon or silicide or SIPOS, e.g. polysilicon, porous silicon}

H01L 21/2258 ・・・・・・{Diffusion into or out of AIIIBV compounds}

H01L 21/228 ・・・・・using diffusion into or out of a solid from or into a liquid phase, e.g. alloy diffusion processes {(H01L 21/221 to H01L 21/222 take precedence)}

H01L 21/24 ・・・・Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body {(H01L 21/182 takes precedence)}

H01L 21/242 ・・・・・{Alloying of doping materials with AIIIBV compounds}

H01L 21/244 ・・・・・{Alloying of electrode materials}

H01L 21/246 ・・・・・・{with AIIIBV compounds}

H01L 21/248 ・・・・・{Apparatus specially adapted for the alloying}

H01L 21/26 ・・・・Bombardment with radiation {(H01L 21/3105 takes precedence)}

H01L 21/2605 ・・・・・{using natural radiation, e.g. alpha, beta or gamma radiation}

H01L 21/261 ・・・・・to produce a nuclear reaction transmuting chemical elements

H01L 21/263 ・・・・・with high-energy radiation (H01L 21/261 takes precedence)

H01L 21/2633 ・・・・・・{for etching, e.g. sputteretching}

H01L 21/2636 ・・・・・・{for heating, e.g. electron beam heating}

H01L 21/265 ・・・・・・producing ion implantation (ion beam tubes for localised treatment H01J 37/30)

H01L 21/26506 ・・・・・・・{in group IV semiconductors}

H01L 21/26513 ・・・・・・・・{of electrically active species}

H01L 21/2652 ・・・・・・・・・{Through-implantation}

H01L 21/26526 ・・・・・・・・{Recoil-implantation}

H01L 21/26533 ・・・・・・・・{of electrically inactive species in silicon to make buried insulating layers}

H01L 21/2654 ・・・・・・・{in AIIIBV compounds}

H01L 21/26546 ・・・・・・・・{of electrically active species}

H01L 21/26553 ・・・・・・・・・{Through-implantation}

H01L 21/2656 ・・・・・・・・{characterised by the implantation of both electrically active and inactive species in the same semiconductor region to be doped}

H01L 21/26566 ・・・・・・・{of a cluster, e.g. using a gas cluster ion beam}

H01L 21/2658 ・・・・・・・{of a molecular ion, e.g. decaborane}

H01L 21/26586 ・・・・・・・{characterised by the angle between the ion beam and the crystal planes or the main crystal surface}

H01L 21/26593 ・・・・・・・{at a temperature lower than room temperature}

H01L 21/266 ・・・・・・・using masks {(H01L 21/26586 takes precedence)}

H01L 21/268 ・・・・・・using electromagnetic radiation, e.g. laser radiation

H01L 21/2683 ・・・・・・・{using X-ray lasers}

H01L 21/2686 ・・・・・・・{using incoherent radiation}

H01L 21/28 ・・・・Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in H01L 21/20 to H01L 21/268; {etching for patterning the electrodes H01L 21/311 and H01L 21/3213}

H01L 21/28008 ・・・・・{Making conductor-insulator-semiconductor electrodes}

H01L 21/28017 ・・・・・・{the insulator being formed after the semiconductor body, the semiconductor being silicon}

H01L 21/28026 ・・・・・・・{characterised by the conductor (H01L 21/28176 takes precedence)}

H01L 21/28035 ・・・・・・・・{the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities (H01L 21/28105 takes precedence)}

H01L 21/28044 ・・・・・・・・・{the conductor comprising at least another non-silicon conductive layer}

H01L 21/28052 ・・・・・・・・・・{the conductor comprising a silicide layer formed by the silicidation reaction of silicon with a metal layer (formed by metal ion implantation H01L 21/28044)}

H01L 21/28061 ・・・・・・・・・・{the conductor comprising a metal or metallic silicode formed by deposition, e.g. sputter deposition, i.e. without a silicidation reaction (H01L 21/28052 takes precedence)}

H01L 21/2807 ・・・・・・・・{the final conductor layer next to the insulator being Si or Ge or C and their alloys except Si}

H01L 21/28079 ・・・・・・・・{the final conductor layer next to the insulator being a single metal, e.g. Ta, W, Mo, Al}

H01L 21/28088 ・・・・・・・・{the final conductor layer next to the insulator being a composite, e.g. TiN}

H01L 21/28097 ・・・・・・・・{the final conductor layer next to the insulator being a metallic silicide}

H01L 21/28105 ・・・・・・・・{the final conductor next to the insulator having a lateral composition or doping variation, or being formed laterally by more than one deposition step}

H01L 21/28114 ・・・・・・・・{characterised by the sectional shape, e.g. T, inverted-T}

H01L 21/28123 ・・・・・・・・{Lithography-related aspects, e.g. sub-lithography lengths; Isolation-related aspects, e.g. to solve problems arising at the crossing with the side of the device isolation; Planarisation aspects}

H01L 21/28132 ・・・・・・・・・{conducting part of electrode is difined by a sidewall spacer or a similar technique, e.g. oxidation under mask, plating}

H01L 21/28141 ・・・・・・・・・{insulating part of the electrode is defined by a sidewall spacer, e.g. dummy spacer, or a similar technique, e.g. oxidation under mask, plating}

H01L 21/2815 ・・・・・・・・・{part or whole of the electrode is a sidewall spacer or made by a similar technique, e.g. transformation under mask, plating}

H01L 21/28158 ・・・・・・・{Making the insulator}

H01L 21/28167 ・・・・・・・・{on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation}

H01L 21/28176 ・・・・・・・・・{with a treatment, e.g. annealing, after the formation of the definitive gate conductor}

H01L 21/28185 ・・・・・・・・・{with a treatment, e.g. annealing, after the formation of the gate insulator and before the formation of the definitive gate conductor}

H01L 21/28194 ・・・・・・・・・{by deposition, e.g. evaporation, ALD, CVD, sputtering, laser deposition (H01L 21/28202 takes precedence)}

H01L 21/28202 ・・・・・・・・・{in a nitrogen-containing ambient, e.g. nitride deposition, growth, oxynitridation, NH3 nitridation, N2O oxidation, thermal nitridation, RTN, plasma nitridation, RPN}

H01L 21/28211 ・・・・・・・・・{in a gaseous ambient using an oxygen or a water vapour, e.g. RTO, possibly through a layer (H01L 21/28194 and H01L 21/28202 take precedence)}{Note: thin oxidation layers used as a barrier layer or as a buffer layer, e.g. before the fomation of a high-k insulator, are classified here only if important per se}

H01L 21/2822 ・・・・・・・・{with substrate doping, e.g. N, Ge, C implantation, before formation of the insulator}

H01L 21/28229 ・・・・・・・・{by deposition of a layer, e.g. metal, metal compound or poysilicon, followed by transformation thereof into an insulating layer}

H01L 21/28238 ・・・・・・・・{with sacrificial oxide}

H01L 21/28247 ・・・・・・・{passivation or protection of the electrode, e.g. using re-oxidation}

H01L 21/28255 ・・・・・・{the insulator being formed after the semiconductor body, the semiconductor belonging to the fourth group and not being elemental silicon, e.g. Ge, SiGe, SiGeC}

H01L 21/28264 ・・・・・・{the insulator being formed after the semiconductor body, the semiconductor being a III-V compound}

H01L 21/28273 ・・・・・{Making conductor-insulator-conductor-insulator-semiconductor electrodes (H01L 21/28291 takes precedence)}

H01L 21/28282 ・・・・・{comprising a charge trapping insulator}

H01L 21/28291 ・・・・・{comprising a layer which is used for its ferroelectric properties}

H01L 21/283 ・・・・・Deposition of conductive or insulating materials for electrodes {conducting electric current}

H01L 21/285 ・・・・・・from a gas or vapour, e.g. condensation

H01L 21/28506 ・・・・・・・{of conductive layers}

H01L 21/28512 ・・・・・・・・{on semiconductor bodies comprising elements of the fourth group of the Periodic System}

H01L 21/28518 ・・・・・・・・・{the conductive layers comprising silicides (H01L 21/28537 takes precedence)}

H01L 21/28525 ・・・・・・・・・{the conductive layers comprising semiconducting material (H01L 21/28518, H01L 21/28537 take precedence)}

H01L 21/28531 ・・・・・・・・・・{Making of side-wall contacts}

H01L 21/28537 ・・・・・・・・・{Deposition of Schottky electrodes}

H01L 21/2855 ・・・・・・・・・{by physical means, e.g. sputtering, evaporation (H01L 21/28518 to H01L 21/28537 and H01L 21/28568 take precedence)}

H01L 21/28556 ・・・・・・・・・{by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD (H01L 21/28518 to H01L 21/28537 and H01L 21/28568 take precedence)}

H01L 21/28562 ・・・・・・・・・・{Selective deposition}

H01L 21/28568 ・・・・・・・・・{the conductive layers comprising transition metals (H01L 21/28518 takes precedence)}

H01L 21/28575 ・・・・・・・・{on semiconductor bodies comprising AIIIBV compounds}

H01L 21/28581 ・・・・・・・・・{Deposition of Schottky electrodes}

H01L 21/28587 ・・・・・・・・・{characterised by the sectional shape, e.g. T, inverted T}

H01L 21/28593 ・・・・・・・・・・{asymmetrical sectional shape}

H01L 21/288 ・・・・・・from a liquid, e.g. electrolytic deposition

H01L 21/2885 ・・・・・・・{using an external electrical current, i.e. electro-deposition}

H01L 21/30 ・・・・Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L 21/20 to H01L 21/26(manufacture of electrodes thereon H01L 21/28)

H01L 21/3003 ・・・・・{Hydrogenation or deuterisation, e.g. using atomic hydrogen from a plasma}

H01L 21/3006 ・・・・・・{of AIIIBV compounds}

H01L 21/302 ・・・・・to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting

H01L 21/304 ・・・・・・Mechanical treatment, e.g. grinding, polishing, cutting {(H01L 21/30625 takes precedence)}

H01L 21/3043 ・・・・・・・{Making grooves, e.g. cutting}

H01L 21/3046 ・・・・・・・{using blasting, e.g. sand-blasting (H01L 21/2633 takes precedence)}

H01L 21/306 ・・・・・・Chemical or electrical treatment, e.g. electrolytic etching (to form insulating layers H01L 21/31)

H01L 21/30604 ・・・・・・・{Chemical etching}

H01L 21/30608 ・・・・・・・・{Anisotropic liquid etching (H01L 21/3063 takes precedence)}

H01L 21/30612 ・・・・・・・・{Etching of AIIIBV compounds}

H01L 21/30617 ・・・・・・・・・{Anisotropic liquid etching}

H01L 21/30621 ・・・・・・・・・{Vapour phase etching}

H01L 21/30625 ・・・・・・・{With simultaneous mechanical treatment, e.g. mechanico-chemical polishing}

H01L 21/3063 ・・・・・・・Electrolytic etching

H01L 21/30635 ・・・・・・・・{of A three - B five compounds}

H01L 21/3065 ・・・・・・・Plasma etching; Reactive-ion etching

H01L 21/30655 ・・・・・・・・{comprising alternated and repeated etching and passivation steps, e.g. Bosch process}

H01L 21/308 ・・・・・・・using masks (H01L 21/3063, H01L 21/3065 take precedence)

H01L 21/3081 ・・・・・・・・{characterised by their composition, e.g. multilayer masks, materials}

H01L 21/3083 ・・・・・・・・{characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane}

H01L 21/3085 ・・・・・・・・・{characterised by their behaviour during the process, e.g. soluble masks, redeposited masks}

H01L 21/3086 ・・・・・・・・・{characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment}

H01L 21/3088 ・・・・・・・・・{Process specially adapted to improve the resolution of the mask}

H01L 21/31 ・・・・・to form insulating layers thereon, e.g. for masking or by using photolithographic techniques (layers forming electrodes H01L 21/28; encapsulating layers H01L 21/56); After treatment of these layers

H01L 21/3105 ・・・・・・After-treatment

H01L 21/31051 ・・・・・・・{Planarisation of the insulating layers (H01L 21/31058 takes precedence)}

H01L 21/31053 ・・・・・・・・{involving a dielectric removal step}

H01L 21/31055 ・・・・・・・・・{the removal being a chemical etching step, e.g. dry etching (etching per se H01L 21/311)}

H01L 21/31056 ・・・・・・・・・・{the removal being a selective chemical etching step, e.g. selective dry etching through a mask}

H01L 21/31058 ・・・・・・・{of organic layers}

H01L 21/311 ・・・・・・・Etching the insulating layers {by chemical or physical means (H01L 21/31058 takes precedence)}

H01L 21/31105 ・・・・・・・・{Etching inorganic layers}

H01L 21/31111 ・・・・・・・・・{by chemical means}

H01L 21/31116 ・・・・・・・・・・{by dry-etching}

H01L 21/31122 ・・・・・・・・・・・{of layers not containing Si, e.g. PZT, Al2O3}

H01L 21/31127 ・・・・・・・・{Etching organic layers}

H01L 21/31133 ・・・・・・・・・{by chemical means}

H01L 21/31138 ・・・・・・・・・・{by dry-etching}

H01L 21/31144 ・・・・・・・・{using masks}

H01L 21/3115 ・・・・・・・Doping the insulating layers

H01L 21/31155 ・・・・・・・・{by ion implantation}

H01L 21/312 ・・・・・・Organic layers, e.g. photoresist (H01L 21/3105, H01L 21/32 take precedence; {photoresists per se G03C})

H01L 21/3121 ・・・・・・・{Layers comprising organo-silicon compounds}

H01L 21/3122 ・・・・・・・・{layers comprising polysiloxane compounds}

H01L 21/3124 ・・・・・・・・・{layers comprising hydrogen silsesquioxane}

H01L 21/3125 ・・・・・・・・{layers comprising silazane compounds}

H01L 21/3127 ・・・・・・・{Layers comprising fluoro (hydro)carbon compounds, e.g. polytetrafluoroethylene}

H01L 21/3128 ・・・・・・・{by Langmuir-Blodgett techniques}

H01L 21/314 ・・・・・・Inorganic layers (H01L 21/3105, H01L 21/32 take precedence)

H01L 21/3141 ・・・・・・・{Deposition using atomic layer deposition techniques (ALD)}

H01L 21/3142 ・・・・・・・・{of nano-laminates, e.g. alternating layers of Al203-Hf02}

H01L 21/3143 ・・・・・・・{composed of alternated layers or of mixtures of nitrides and oxides or of oxinitrides, e.g. formation of oxinitride by oxidation of nitride layers}

H01L 21/3144 ・・・・・・・・{on silicon}

H01L 21/3145 ・・・・・・・・{formed by deposition from a gas or vapour}

H01L 21/3146 ・・・・・・・{Carbon layers, e.g. diamond-like layers}

H01L 21/3147 ・・・・・・・{Epitaxial deposition of insulating materials}

H01L 21/3148 ・・・・・・・{Silicon Carbide layers}

H01L 21/316 ・・・・・・・composed of oxides or glassy oxides or oxide based glass

H01L 21/31604 ・・・・・・・・{Deposition from a gas or vapour (H01L 21/31691, H01L 21/31695 take precedence)}

H01L 21/31608 ・・・・・・・・・{Deposition of SiO2 (H01L 21/31625, H01L 21/31629 and H01L 21/31633 take precedence)}

H01L 21/31612 ・・・・・・・・・・{on a silicon body}

H01L 21/31616 ・・・・・・・・・{Deposition of Al2O3}

H01L 21/3162 ・・・・・・・・・・{on a silicon body}

H01L 21/31625 ・・・・・・・・・{Deposition of boron or phosphorus doped silicon oxide, e.g. BSG, PSG, BPSG}

H01L 21/31629 ・・・・・・・・・{Deposition of halogen doped silicon oxide, e.g. fluorine doped silicon oxide}

H01L 21/31633 ・・・・・・・・・{Deposition of carbon doped silicon oxide, e.g. SiOC}

H01L 21/31637 ・・・・・・・・・{Deposition of Tantalum oxides, e.g. Ta2O5}

H01L 21/31641 ・・・・・・・・・{Deposition of Zirconium oxides, e.g. ZrO2}

H01L 21/31645 ・・・・・・・・・{Deposition of Hafnium oxides, e.g. HfO2}

H01L 21/3165 ・・・・・・・・{formed by oxidation (H01L 21/31691, H01L 21/31695 take precedence)}

H01L 21/31654 ・・・・・・・・・{of semiconductor materials, e.g. the body itself}

H01L 21/31658 ・・・・・・・・・・{by thermal oxidation, e.g. of SiGe}

H01L 21/31662 ・・・・・・・・・・・{of silicon in uncombined form}

H01L 21/31666 ・・・・・・・・・・・{of AIII BV compounds}

H01L 21/3167 ・・・・・・・・・・{of anodic oxidation}

H01L 21/31675 ・・・・・・・・・・・{of silicon}

H01L 21/31679 ・・・・・・・・・・・{of AIII BV compounds}

H01L 21/31683 ・・・・・・・・・{of metallic layers, e.g. Al deposited on the body, e.g. formation of multi-layer insulating structures}

H01L 21/31687 ・・・・・・・・・・{by anodic oxidation}

H01L 21/31691 ・・・・・・・・{with perovskite structure}

H01L 21/31695 ・・・・・・・・{Deposition of porous oxides or porous glassy oxides or oxide based porous glass}

H01L 21/318 ・・・・・・・composed of nitrides

H01L 21/3185 ・・・・・・・・{of siliconnitrides}

H01L 21/32 ・・・・・・using masks

H01L 21/3205 ・・・・・・Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers (manufacture of electrodes H01L 21/28)

H01L 21/32051 ・・・・・・・{Deposition of metallic or metal-silicide layers}

H01L 21/32053 ・・・・・・・・{of metal-silicide layers}

H01L 21/32055 ・・・・・・・{Deposition of semiconductive layers, e.g. poly - or amorphous silicon layers}

H01L 21/32056 ・・・・・・・{Deposition of conductive or semi-conductive organic layers (H01L 21/32058 takes precedence)}

H01L 21/32058 ・・・・・・・{Deposition of supra-conductive layers}

H01L 21/321 ・・・・・・・After treatment

H01L 21/32105 ・・・・・・・・{Oxidation of silicon-containing layers }

H01L 21/3211 ・・・・・・・・{Nitridation of silicon-containing layers }

H01L 21/32115 ・・・・・・・・{Planarisation}

H01L 21/3212 ・・・・・・・・・{by chemical mechanical polishing (CMP)}

H01L 21/32125 ・・・・・・・・・・{by simultaneously passing an electrical current, i.e. electrochemical mechanical polishing, e.g. ECMP }

H01L 21/3213 ・・・・・・・・Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer

H01L 21/32131 ・・・・・・・・・{by physical means only}

H01L 21/32132 ・・・・・・・・・・{of silicon-containing layers}

H01L 21/32133 ・・・・・・・・・{by chemical means only}

H01L 21/32134 ・・・・・・・・・・{by liquid etching only}

H01L 21/32135 ・・・・・・・・・・{by vapour etching only}

H01L 21/32136 ・・・・・・・・・・・{using plasmas}

H01L 21/32137 ・・・・・・・・・・・・{of silicon-containing layers}

H01L 21/32138 ・・・・・・・・・・・{pre- or post-treatments, e.g. anti-corrosion processes}

H01L 21/32139 ・・・・・・・・・{using masks}

H01L 21/3215 ・・・・・・・・Doping the layers

H01L 21/32155 ・・・・・・・・・{Doping polycristalline - or amorphous silicon layers}

H01L 21/322 ・・・・・to modify their internal properties, e.g. to produce internal imperfections

H01L 21/3221 ・・・・・・{of silicon bodies, e.g. for gettering}

H01L 21/3223 ・・・・・・・{using cavities formed by hydrogen or noble gas ion implantation}

H01L 21/3225 ・・・・・・・{Thermally inducing defects using oxygen present in the silicon body for intrinsic gettering (H01L 21/3226 takes precedence)}

H01L 21/3226 ・・・・・・・{of silicon on insulator}

H01L 21/3228 ・・・・・・{of AIIIBV compounds, e.g. to make them semi-insulating}

H01L 21/324 ・・・・・Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering (H01L 21/20 to H01L 21/288 and H01L 21/302 to H01L 21/322 take precedence)

H01L 21/3242 ・・・・・・{for the formation of PN junctions without addition of impurities (H01L 21/22 takes precedence)}

H01L 21/3245 ・・・・・・{of III-V compounds}

H01L 21/3247 ・・・・・・{for altering the shape, e.g. smoothing the surface}{Warning: Not complete, see provisionally also H01L 21/324}

H01L 21/326 ・・・・・Application of electric currents or fields, e.g. for electroforming (H01L 21/20 to H01L 21/288 and H01L 21/302 to H01L 21/324 take precedence)

H01L 21/34 ・・・the devices having semiconductor bodies not provided for in groups H01L 21/0405, H01L 21/0445}, H01L 21/06, H01L 21/16 and H01L 21/18 with or without impurities, e.g. doping materials

H01L 21/36 ・・・・Deposition of semiconductor materials on a substrate, e.g. epitaxial growth

H01L 21/363 ・・・・・using physical deposition, e.g. vacuum deposition, sputtering

H01L 21/365 ・・・・・using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition

H01L 21/368 ・・・・・using liquid deposition

H01L 21/38 ・・・・Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions

H01L 21/383 ・・・・・using diffusion into or out of a solid from or into a gaseous phase

H01L 21/385 ・・・・・using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer

H01L 21/388 ・・・・・using diffusion into or out of a solid from or into a liquid phase, e.g. alloy diffusion processes

H01L 21/40 ・・・・Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body

H01L 21/42 ・・・・Bombardment with radiation

H01L 21/423 ・・・・・with high-energy radiation

H01L 21/425 ・・・・・・producing ion implantation (ion beam tubes for localized treatment H01J 37/30)

H01L 21/426 ・・・・・・・using masks

H01L 21/428 ・・・・・・using electromagnetic radiation, e.g. laser radiation

H01L 21/44 ・・・・Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L 21/36 to H01L 21/428

H01L 21/441 ・・・・・Deposition of conductive or insulating materials for electrodes

H01L 21/443 ・・・・・・from a gas or vapour, e.g. condensation

H01L 21/445 ・・・・・・from a liquid, e.g. electrolytic deposition

H01L 21/447 ・・・・・involving the application of pressure, e.g. thermo-compression bonding

H01L 21/449 ・・・・・involving the application of mechanical vibrations, e.g. ultrasonic vibrations

H01L 21/46 ・・・・Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L 21/428(manufacture of electrodes thereon H01L 21/44)

H01L 21/461 ・・・・・to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting

H01L 21/463 ・・・・・・Mechanical treatment, e.g. grinding, ultrasonic treatment

H01L 21/465 ・・・・・・Chemical or electrical treatment, e.g. electrolytic etching (to form insulating layers H01L 21/469)

H01L 21/467 ・・・・・・・using masks

H01L 21/469 ・・・・・・to form insulating layers thereon, e.g. for masking or by using photolithographic techniques (layers forming electrodes H01L 21/44; encapsulating layers H01L 21/56); After-treatment of these layers

H01L 21/47 ・・・・・・・organic layers, e.g. photoresist (H01L 21/475, H01L 21/4757 take precedence)

H01L 21/471 ・・・・・・・Inorganic layers (H01L 21/475, H01L 21/4757 take precedence)

H01L 21/473 ・・・・・・・・composed of oxides or glassy oxides or oxide based glass

H01L 21/475 ・・・・・・・using masks

H01L 21/4757 ・・・・・・・After-treatment

H01L 21/47573 ・・・・・・・・{Etching the layer}

H01L 21/47576 ・・・・・・・・{Doping the layer}

H01L 21/4763 ・・・・・・Deposition of non-insulating, e.g. conductive -, resistive -, layers on insulating layers; After-treatment of these layers (manufacture of electrodes H01L 21/28, {H01L 21/44})

H01L 21/47635 ・・・・・・・{After-treatment of these layers}

H01L 21/477 ・・・・・Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering (H01L 21/36 to H01L 21/449 and H01L 21/461 to H01L 21/475 take precedence)

H01L 21/479 ・・・・・Application of electric currents or fields, e.g. for electroforming (H01L 21/36 to H01L 21/449 and H01L 21/461 to H01L 21/477 take precedence)

H01L 21/48 ・・・Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L 21/06 to H01L 21/326({apparatus therefor H01L 21/67005; insulative sealing of leads in bases H01L 21/50}; containers, encapsulations, fillings, mountings per se H01L 23/00; {marking of parts H01L 23/544})

H01L 21/4803 ・・・・{Insulating or insulated parts, e.g. mountings, containers, diamond heatsinks (H01L 21/4846 takes precedence; printed circuit boards H05K 1/00)}

H01L 21/4807 ・・・・・{Ceramic parts}

H01L 21/481 ・・・・・{Insulating layers on insulating parts, with or without metallisation}

H01L 21/4814 ・・・・{Conductive parts}

H01L 21/4817 ・・・・・{for containers, e.g. caps (H01L 21/4871 takes precedence)}

H01L 21/4821 ・・・・・{Flat leads, e.g. lead frames with or without insulating supports}

H01L 21/4825 ・・・・・・{Connection or disconnection of other leads to or from flat leads, e.g. wires, bumps, other flat leads}

H01L 21/4828 ・・・・・・{Etching (etching for cleaning without patterning H01L 21/4835)}

H01L 21/4832 ・・・・・・・{Etching a temporary substrate after encapsulation process to form leads}

H01L 21/4835 ・・・・・・{Cleaning, e.g. removing of solder}

H01L 21/4839 ・・・・・・{Assembly of a flat lead with an insulating support, e.g. for TAB}

H01L 21/4842 ・・・・・・{Mechanical treatment, e.g. punching, cutting, deforming, cold welding}

H01L 21/4846 ・・・・・{Leads on or in insulating or insulated substrates, e.g. metallisation (H01L 21/4821 takes precedence; metallisation of ceramics in general C04B 41/51; printed circuits H05K 3/00)}

H01L 21/485 ・・・・・・{Adaptation of interconnections, e.g. engineering charges, repair techniques}

H01L 21/4853 ・・・・・・{Connection or disconnection of other leads to or from a metallisation, e.g. pins, wires, bumps}

H01L 21/4857 ・・・・・・{Multilayer substrates (multilayer metallisation on monolayer substrate H01L 21/4846)}

H01L 21/486 ・・・・・・{Via connections through the substrate with or without pins}

H01L 21/4864 ・・・・・・{Cleaning, e.g. removing of solder}

H01L 21/4867 ・・・・・・{Applying pastes or inks, e.g. screen printing (H01L 21/486 takes precedence)}

H01L 21/4871 ・・・・・{Bases, plates or heatsinks}

H01L 21/4875 ・・・・・・{Connection or disconnection of other leads to or from bases or plates}

H01L 21/4878 ・・・・・・{Mechanical treatment, e.g. deforming}

H01L 21/4882 ・・・・・・{Assembly of heatsink parts}

H01L 21/4885 ・・・・・{Wire-like parts or pins (wire ball formation B23K 20/00; methods related to connecting semiconductor or other solid state bodies H01L 24/00)}

H01L 21/4889 ・・・・・・{Connection or disconnection of other leads to or from wire-like parts, e.g. wires}

H01L 21/4892 ・・・・・・{Cleaning}

H01L 21/4896 ・・・・・・{Mechanical treatment, e.g. cutting, bending}

H01L 21/50 ・・・Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L 21/06 to H01L 21/326, {e.g. sealing of a cap to a base of a container}

H01L 21/52 ・・・・Mounting semiconductor bodies in containers

H01L 21/54 ・・・・Providing fillings in containers, e.g. gas fillings

H01L 21/56 ・・・・Encapsulations, e.g. encapsulation layers, coatings

H01L 21/561 ・・・・・{Batch processing}

H01L 21/563 ・・・・・{Encapsulation of active face of flip-chip device, e.g. underfilling or underencapsulation of flip-chip, encapsulation preform on chip or mounting substrate}

H01L 21/565 ・・・・・{Moulds}

H01L 21/566 ・・・・・・{Release layers for moulds, e.g. release layers, layers against residue during moulding}

H01L 21/568 ・・・・・{Temporary substrate used as encapsulation process aid (H01L 21/4832 and H01L 21/566 take precedence)}

H01L 21/58 ・・・・{Insulative} mounting semiconductor devices on supports {(H01L 21/563,H01L 23/49513 take precedence)}

H01L 21/62 ・・the devices having no potential-jump barriers or surface barriers

H01L 21/64 ・Manufacture or treatment of solid state devices other than semiconductor devices, or of parts thereof, not peculiar to a single device provided for in groups H01L 31/00 to H01L 51/00

H01L 21/67 ・Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; {Apparatus not specifically provided for elsewhere (processes per se H01L 21/30, H01L 21/46, H01L 23/00; simple temporary support means, e.g. using adhesives, electric or magnetic means H01L 21/68, H01L 21/302; apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto H01L 24/74;)}

H01L 21/67005 ・・{Apparatus not specifically provided for elsewhere (processes per se H01L 21/30, H01L 21/46, H01L 23/00; simple temporary support means, e.g. using adhesives, electric or magnetic means H01L 21/68, H01L 21/302)}

H01L 21/67011 ・・・{Apparatus for manufacture or treatment (processes H01L 21/30, H01L 21/46; for production or after-treatment of single crystals or homogeneous polycrystalline material C30B 35/00)}

H01L 21/67017 ・・・・{Apparatus for fluid treatment (H01L 21/67126, H01L 21/6715 take precedence)}

H01L 21/67023 ・・・・・{for general liquid treatment, e.g. etching followed by cleaning}

H01L 21/67028 ・・・・・{for cleaning followed by drying, rinsing, stripping, blasting or the like}

H01L 21/67034 ・・・・・・{for drying}

H01L 21/6704 ・・・・・・{for wet cleaning or washing}

H01L 21/67046 ・・・・・・・{using mainly scrubbing means, e.g. brushes}

H01L 21/67051 ・・・・・・・{using mainly spraying means, e.g. nozzles}

H01L 21/67057 ・・・・・・・{with the semiconductor substrates being dipped in baths or vessels}

H01L 21/67063 ・・・・・{for etching}

H01L 21/67069 ・・・・・・{for drying etching}

H01L 21/67075 ・・・・・・{for wet etching}

H01L 21/6708 ・・・・・・・{using mainly spraying means, e.g. nozzles}

H01L 21/67086 ・・・・・・・{with the semiconductor substrates being dipped in baths or vessels}

H01L 21/67092 ・・・・{Apparatus for mechanical treatment (or grinding or cutting, see the relevant groups in subclasses B24B or B28D)}

H01L 21/67098 ・・・・{Apparatus for thermal treatment}

H01L 21/67103 ・・・・・{mainly by conduction}

H01L 21/67109 ・・・・・{mainly by convection}

H01L 21/67115 ・・・・・{mainly by radiation}

H01L 21/67121 ・・・・{Apparatus for making assemblies not otherwise provided for, e.g. package constructions}

H01L 21/67126 ・・・・{Apparatus for sealing, encapsulating, glassing, decapsulating or the like (processes H01L 23/02, H01L 23/28)}

H01L 21/67132 ・・・・{Apparatus for placing on an insulating substrate, e.g. tape}

H01L 21/67138 ・・・・{Apparatus for wiring semiconductor or solid state device}

H01L 21/67144 ・・・・{Apparatus for mounting on conductive members, e.g. leadframes or conductors on insulating substrates}

H01L 21/6715 ・・・・{Apparatus for applying a liquid, a resin, an ink or the like (H01L 21/67126 takes precedence)}

H01L 21/67155 ・・・・{Apparatus for manufacturing or treating in a plurality of work-stations}

H01L 21/67161 ・・・・・{characterized by the layout of the process chambers}

H01L 21/67167 ・・・・・・{surrounding a central transfer chamber}

H01L 21/67173 ・・・・・・{in-line arrangement}

H01L 21/67178 ・・・・・・{vertical arrangement}

H01L 21/67184 ・・・・・{characterized by the presence of more than one transfer chamber}

H01L 21/6719 ・・・・・{characterized by the construction of the processing chambers, e.g. modular processing chambers}

H01L 21/67196 ・・・・・{characterized by the construction of the transfer chamber}

H01L 21/67201 ・・・・・{characterized by the construction of the load-lock chamber}

H01L 21/67207 ・・・・・{comprising a chamber adapted to a particular process}

H01L 21/67213 ・・・・・・{comprising at least one ion or electron beam chamber (coating by ion implantation C23C; ion or electron beam tubes H01J 37/00)}

H01L 21/67219 ・・・・・・{comprising at least one polishing chamber (polishing apparatuses B24B)}

H01L 21/67225 ・・・・・・{comprising at least one lithography chamber (lithographic apparatuses G03F 7/00)}

H01L 21/6723 ・・・・・・{comprising at least one plating chamber (electroless plating apparatuses C23C, electroplating apparatuses C25D)}

H01L 21/67236 ・・・・・{the substrates being processed being not semiconductor wafers, e.g. leadframes or chips}

H01L 21/67242 ・・・{Apparatus for monitoring, sorting or marking (testing or measuring during manufacture H01L 22/00, marks per se H01L 23/544; testing individual semiconductor devices G01R 31/26)}

H01L 21/67248 ・・・・{Temperature monitoring}

H01L 21/67253 ・・・・{Process monitoring, e.g. flow or thickness monitoring}

H01L 21/67259 ・・・・{Position monitoring, e.g. misposition detection or presence detection}

H01L 21/67265 ・・・・・{of substrates stored in a container, a magazine, a carrier, a boat or the like}

H01L 21/67271 ・・・・{Sorting devices}

H01L 21/67276 ・・・・{Production flow monitoring, e.g. for increasing throughput (program-control systems per se G05B 19/00, e.g. total factory control G05B 19/418)}

H01L 21/67282 ・・・・{Marking devices}

H01L 21/67288 ・・・・{Monitoring of warpage, curvature, damage, defects or the like}

H01L 21/67294 ・・・・{using identification means, e.g. labels on substrates or labels on containers}

H01L 21/673 ・・using specially adapted carriers {or holders; Fixing the workpieces on such carriers or holders (holders for supporting a complete device in operation H01L 23/32)}

H01L 21/67303 ・・・{Vertical boat type carrier whereby the substrates are horizontally supported, e.g. comprising rod-shaped elements}

H01L 21/67306 ・・・・{characterized by a material, a roughness, a coating or the like}

H01L 21/67309 ・・・・{characterized by the substrate support}

H01L 21/67313 ・・・{Horizontal boat type carrier whereby the substrates are vertically supported, e.g. comprising rod-shaped elements}

H01L 21/67316 ・・・・[N: characterized by a material, a roughness, a coating or the like

H01L 21/6732 ・・・{Vertical carrier comprising wall type elements whereby the substrates are horizontally supported, e.g. comprising sidewalls}

H01L 21/67323 ・・・・{characterized by a material, a roughness, a coating or the like}

H01L 21/67326 ・・・{Horizontal carrier comprising wall type elements whereby the substrates are vertically supported, e.g. comprising sidewalls}

H01L 21/6733 ・・・・{characterized by a material, a roughness, a coating or the like}

H01L 21/67333 ・・・{Trays for chips (magazine for components H05K 13/0084)}

H01L 21/67336 ・・・・{characterized by a material, a roughness, a coating or the like}

H01L 21/6734 ・・・{specially adapted for supporting large square shaped substrates (containers and packaging elements for glass sheets B65D 85/48, transporting of glass products during their manufacture C03B 35/00)}

H01L 21/67343 ・・・・{characterized by a material, a roughness, a coating or the like}

H01L 21/67346 ・・・{characterized by being specially adapted for supporting a single substrate or by comprising a stack of such individual supports}

H01L 21/6735 ・・・{Closed carriers}

H01L 21/67353 ・・・・{specially adapted for a single substrate}

H01L 21/67356 ・・・・{specially adapted for containing chips, dies or ICs}

H01L 21/67359 ・・・・{specially adapted for containing masks, reticles or pellicles}

H01L 21/67363 ・・・・{specially adapted for containing substrates other than wafers (H01L 21/67356, H01L 21/67359 take precedence)}

H01L 21/67366 ・・・・{characterised by materials, roughness, coatings or the like (materials relating to an injection moulding process B29C 45/00; chemical composition of materials C08L 51/00)}

H01L 21/67369 ・・・・{characterised by shock absorbing elements, e.g. retainers or cushions}

H01L 21/67373 ・・・・{characterised by locking systems}

H01L 21/67376 ・・・・{characterised by sealing arrangements}

H01L 21/67379 ・・・・{characterised by coupling elements, kinematic members, handles or elements to be externally gripped}

H01L 21/67383 ・・・・{characterised by substrate supports}

H01L 21/67386 ・・・・{characterised by the construction of the closed carrier}

H01L 21/67389 ・・・・{characterised by atmosphere control}

H01L 21/67393 ・・・・・{characterised by the presence of atmosphere modifying elements inside or attached to the closed carrierl}

H01L 21/67396 ・・・・{characterised by the presence of antistatic elements}

H01L 21/677 ・・for conveying, e.g. between different workstations

H01L 21/67703 ・・・{between different workstations}

H01L 21/67706 ・・・・{Mechanical details, e.g. roller, belt (H01L 21/67709 takes precedence)}

H01L 21/67709 ・・・・{using magnetic elements}

H01L 21/67712 ・・・・{the substrate being handled substantially vertically}

H01L 21/67715 ・・・・{Changing the direction of the conveying path}

H01L 21/67718 ・・・・{Changing orientation of the substrate, e.g. from a horizontal position to a vertical position}

H01L 21/67721 ・・・・{the substrates to be conveyed not being semiconductor wafers or large planar substrates, e.g. chips, lead frames, H01L 21/6773 takes precedence}

H01L 21/67724 ・・・・{by means of a cart or a vehicule}

H01L 21/67727 ・・・・{using a general scheme of a conveying path within a factory}

H01L 21/6773 ・・・・{Conveying cassettes, containers or carriers}

H01L 21/67733 ・・・・{Overhead conveying}

H01L 21/67736 ・・・・{Loading to or unloading from a conveyor}

H01L 21/67739 ・・・{into and out of processing chamber}

H01L 21/67742 ・・・・{Mechanical parts of transfer devices (robots in general in B25J)}

H01L 21/67745 ・・・・{characterized by movements or sequence of movements of transfer devices}

H01L 21/67748 ・・・・{horizontal transfer of a single workpiece}

H01L 21/67751 ・・・・{vertical transfer of a single workpiece}

H01L 21/67754 ・・・・{horizontal transfer of a batch of workpieces}

H01L 21/67757 ・・・・{vertical transfer of a batch of workpieces}

H01L 21/6776 ・・・・{Continuous loading and unloading into and out of a processing chamber, e.g. transporting belts within processing chambers}

H01L 21/67763 ・・・{the wafers being stored in a carrier, involving loading and unloading (H01L 21/6779 takes precedence)}

H01L 21/67766 ・・・・{Mechanical parts of transfer devices (robots in general in B25J)}

H01L 21/67769 ・・・・{Storage means}

H01L 21/67772 ・・・・{involving removal of lid, door, cover}

H01L 21/67775 ・・・・{Docking arrangements}

H01L 21/67778 ・・・・{involving loading and unloading of waers}

H01L 21/67781 ・・・・・{Batch transfer of wafers}

H01L 21/67784 ・・・{using air tracks}

H01L 21/67787 ・・・・{with angular orientation of the workpieces}

H01L 21/6779 ・・・・{the workpieces being stored in a carrier, involving loading and unloading}

H01L 21/67793 ・・・{with orientating and positioning by means of a vibratory bowl or track}

H01L 21/67796 ・・・{with angular orientation of workpieces (H01L 21/67787 and H01L 21/67793 take precedence)}

H01L 21/68 ・・for positioning, orientation or alignment (for conveying H01L 21/677)

H01L 21/681 ・・・{using optical controlling means}

H01L 21/682 ・・・{Mask-wafer alignment (in general G03F 7/20T, G03F 9/00T)}

H01L 21/683 ・・for supporting or gripping (for conveying H01L 21/677, for positioning, orientation or alignment H01L 21/68)

H01L 21/6831 ・・・{using electrostatic chucks}

H01L 21/6833 ・・・・{Details of electrostatic chucks}

H01L 21/6835 ・・・{using temporarily an auxiliary support}

H01L 21/6836 ・・・・{Wafer tapes, e.g. grinding or dicing support tapes (adhesive tapes in general C09J 7/02)}

H01L 21/6838 ・・・{with gripping and holding devices using a vacuum; Bernoulli devices}

H01L 21/687 ・・・using mechanical means, e.g. chucks, clamps or pinches {(using elecrostatic chucks H01L 21/683C)}

H01L 21/68707 ・・・・{the wafers being placed on a robot blade, or gripped by a gripper for conveyance}

H01L 21/68714 ・・・・{the wafers being placed on a susceptor, stage or support}

H01L 21/68721 ・・・・・{characterised by edge clamping, e.g. clamping ring}

H01L 21/68728 ・・・・・{characterised by a plurality of separate clamping members, e.g. clamping fingers}

H01L 21/68735 ・・・・・{characterised by edge profile or support profile}

H01L 21/68742 ・・・・・{characterised by a lifting arrangement, e.g. lift pins}

H01L 21/6875 ・・・・・{characterised by a plurality of individual support members, e.g. support posts or protrusions}

H01L 21/68757 ・・・・・{characterised by a coating or a hardness or a material}

H01L 21/68764 ・・・・・{characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel}

H01L 21/68771 ・・・・・{characterised by supporting more than one semiconductor substrate}

H01L 21/68778 ・・・・・{characterised by supporting substrates others than wafers, e.g. chips}

H01L 21/68785 ・・・・・{characterised by the mechanical construction of the susceptor, stage or support}

H01L 21/68792 ・・・・・{characterised by the construction of the shaft}

H01L 21/70 ・Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof ; Manufacture of integrated circuit devices or of parts thereof ({multistep manufacturing processes of assemblies consisting of a plurality of individual semiconductor or other solid state devices H01L 25/00}, manufacture of assemblies consisting or preformed electrical components H05K 3/00, H05K 13/00)

H01L 21/702 ・・{of thick-or thin-film circuits or parts thereof}

H01L 21/705 ・・・{of thick-film circuits or parts thereof}

H01L 21/707 ・・・{of thin-film circuits or parts thereof}

H01L 21/71 ・・Manufacture of specific parts of devices defined in group H01L 21/70({H01L 21/0405, H01L 21/0445}, H01L 21/28, H01L 21/44, H01L 21/48 take precedence)

H01L 21/74 ・・・Making of {localized} buried regions, e.g. buried collector layers, internal connections {substrate contacts}

H01L 21/743 ・・・・{Making of internal connections, substrate contacts}

H01L 21/746 ・・・・{for AIII-BV integrated circuits}

H01L 21/76 ・・・Making of isolation regions between components

H01L 21/7602 ・・・・{between components manufactured in an active substrate comprising SiC compounds}

H01L 21/7605 ・・・・{between components manufactured in an active substrate comprising AIII BV compounds}

H01L 21/7607 ・・・・{between components manufactured in an active substrate comprising II-VI compounds}

H01L 21/761 ・・・・PN junctions

H01L 21/762 ・・・・Dielectric regions, {e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers }

H01L 21/76202 ・・・・・{using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO (H01L 21/76235 takes precedence; together with vertical isolation, e.g. LOCOS in a SOI substrate, H01L 21/76264)}

H01L 21/76205 ・・・・・・{in a region being recessed from the surface, e.g. in a recess, groove, tub or trench region}

H01L 21/76208 ・・・・・・・{using auxiliary pillars in the recessed region, e.g. to form LOCOS over extended areas}

H01L 21/7621 ・・・・・・・{the recessed region having a shape other than rectangular, e.g. rounded or oblique shape (H01L 21/76208 takes precedence)}

H01L 21/76213 ・・・・・・{introducing electrical inactive or active impurities in the local oxidation region, e.g. to alter LOCOS oxide growth characteristics or for additional isolation purpose}

H01L 21/76216 ・・・・・・・{introducing electrical active impurities in the local oxidation region for the sole purpose of creating channel stoppers}

H01L 21/76218 ・・・・・・・・{introducing both types of electrical active impurities in the local oxidation region for the sole purpose of creating channel stoppers, e.g. for isolation of complementary doped regions}

H01L 21/76221 ・・・・・・{with a plurality of successive local oxidation steps}

H01L 21/76224 ・・・・・{using trench refilling with dielectric materials (trench filling with polycristalline siliconH01L 21/763; together with vertical isolation, e.g. trench refilling in a SOI substrateH01L 21/76264)}

H01L 21/76227 ・・・・・・{the dielectric materials being obtained by full chemical transformation of non-dielectric materials, such as polycristalline silicon, metals}

H01L 21/76229 ・・・・・・{Concurrent filling of a plurality of trenches having a different trench shape or dimension, e.g. rectangular and V-shaped trenches, wide and narrow trenches, shallow and deep trenches}

H01L 21/76232 ・・・・・・{of trenches having a shape other than rectangular or V-shape, e.g. rounded corners, oblique or rounded trench walls (H01L 21/76229 takes precedence)}

H01L 21/76235 ・・・・・・・{trench shape altered by a local oxidation of silicon process step, e.g. trench corner rounding by LOCOS}

H01L 21/76237 ・・・・・・{introducing impurities in trench side or bottom walls, e.g. for forming channel stoppers or alter isolation behavior}

H01L 21/7624 ・・・・・{using semiconductor on insulator (SOI) technology (H01L 21/76297 takes precedence; manufacture of integrated circuits on insulating substrates H01L 21/84; silicon on sapphire (SOS) technology H01L 21/86)}

H01L 21/76243 ・・・・・・{using silicon implanted buried insulating layers, e.g. oxide layers, i.e. SIMOX techniques}

H01L 21/76245 ・・・・・・{using full isolation by porous oxide silicon, i.e. FIPOS techniques}

H01L 21/76248 ・・・・・・{using lateral overgrowth techniques, i.e. ELO techniques}

H01L 21/76251 ・・・・・・{using bonding techniques}

H01L 21/76254 ・・・・・・・{with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond}

H01L 21/76256 ・・・・・・・{using silicon etch back techniques, e.g. BESOI, ELTRAN}

H01L 21/76259 ・・・・・・・{with separation/delamination along a porous layer}

H01L 21/76262 ・・・・・・{using selective deposition of single crystal silicon, i.e. SEG techniques}

H01L 21/76264 ・・・・・・{SOI together with lateral isolation, e.g. using local oxidation of silicon, or dielectric or polycristalline material refilled trench or air gap isolation regions, e.g. completely isolated semiconductor islands}

H01L 21/76267 ・・・・・・・{Vertical isolation by silicon implanted buried insulating layers, e.g. oxide layers, i.e. SIMOX techniques}

H01L 21/7627 ・・・・・・・{Vertical isolation by full isolation by porous oxide silicon, i.e. FIPOS techniques}

H01L 21/76272 ・・・・・・・{Vertical isolation by lateral overgrowth techniques, i.e. ELO techniques }

H01L 21/76275 ・・・・・・・{Vertical isolation by bonding techniques}

H01L 21/76278 ・・・・・・・{Vertical isolation by selective deposition of single crystal silicon, i.e. SEG techniques}

H01L 21/76281 ・・・・・・・{Lateral isolation by selective oxidation of silicon}

H01L 21/76283 ・・・・・・・{Lateral isolation by refilling of trenches with dielectric material}

H01L 21/76286 ・・・・・・・{Lateral isolation by refilling of trenches with polycristalline material}

H01L 21/76289 ・・・・・・・{Lateral isolation by air gap}

H01L 21/76291 ・・・・・・・{Lateral isolation by field effect}

H01L 21/76294 ・・・・・{using selective deposition of single crystal silicon, i.e. SEG techniques}

H01L 21/76297 ・・・・・{Dielectric isolation using EPIC techniques, i.e. epitaxial passivated integrated circuit}

H01L 21/763 ・・・・Polycristalline semiconductor regions {(H01L 21/76264 takes precedence)}

H01L 21/764 ・・・・Air gaps {(H01L 21/76264 takes precedence)}

H01L 21/765 ・・・・by field effect {(H01L 21/76264 takes precedence)}

H01L 21/768 ・・・Applying interconnections to be used for carrying current between separate components within a device {comprising conductors and dielectrics}

H01L 21/76801 ・・・・{characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing}

H01L 21/76802 ・・・・・{by forming openings in dielectrics}

H01L 21/76804 ・・・・・・{by forming tapered via holes}

H01L 21/76805 ・・・・・・{the opening being a via or contact hole penetrating the underlying conductor}

H01L 21/76807 ・・・・・・{for dual damascene structures}

H01L 21/76808 ・・・・・・・{involving intermediate temporary filling with material}

H01L 21/7681 ・・・・・・・{involving one or more buried masks}

H01L 21/76811 ・・・・・・・{involving multiple stacked pre-patterned masks}

H01L 21/76813 ・・・・・・・{involving a partial via etch}

H01L 21/76814 ・・・・・・{post-treatment or after-treatment, e.g. cleaning or removal of oxides on underlying conductors}

H01L 21/76816 ・・・・・・uN: Aspects relating to the layout of the pattern or to the size of vias or trenches (layout of the interconnections per se H01L 23/528; CAD of ICs G06F 17/50)]

H01L 21/76817 ・・・・・・{using printing or stamping techniques}

H01L 21/76819 ・・・・・{Smoothing of the dielectric (planarisation of insulating materials per se H01L 21/31051)}

H01L 21/7682 ・・・・・{the dielectric comprising air gaps}

H01L 21/76822 ・・・・・{Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc.}{WARNING: Groups H01L 21/76822-H01L 21/76837 are not complete; see provisionally H01L 21/76801}

H01L 21/76823 ・・・・・・{transforming an insulating layer into a conductive layer}

H01L 21/76825 ・・・・・・{by exposing the layer to particle radiation, e.g. ion implantation, irradiation with UV light or electrons etc.(plasma treatment H01L 21/76826)}

H01L 21/76826 ・・・・・・{by contacting the layer with gases, liquids or plasmas}

H01L 21/76828 ・・・・・・{thermal treatment}

H01L 21/76829 ・・・・・{characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers}

H01L 21/76831 ・・・・・・{in via holes or trenches, e.g. non-conductive sidewall liners}

H01L 21/76832 ・・・・・・{Multiple layers}

H01L 21/76834 ・・・・・・{formation of thin insulating films on the sidewalls or on top of conductors (H01L 21/76831 takes precedence)}

H01L 21/76835 ・・・・・{Combinations of two or more different dielectric layers having a low dielectric constant (H01L 21/76832 takes precedence)}

H01L 21/76837 ・・・・・{Filling up the space between adjacent conductive structures; Gap-filling properties of dielectrics}

H01L 21/76838 ・・・・{characterised by the formation and the after-treatment of the conductors (etching for patterning the conductors H01L 21/3213)}

H01L 21/7684 ・・・・・{Smoothing; Planarisation}

H01L 21/76841 ・・・・・{Barrier, adhesion or liner layers}

H01L 21/76843 ・・・・・・{formed in openings in a dielectric}

H01L 21/76844 ・・・・・・・{Bottomless liners}

H01L 21/76846 ・・・・・・・{Layer combinations}

H01L 21/76847 ・・・・・・・{the layer being positioned within the main fill metal}

H01L 21/76849 ・・・・・・・{the layer being positioned on top of the main fill metal}

H01L 21/7685 ・・・・・・{the layer covering a conductive structure (H01L 21/76849 takes precedence)}

H01L 21/76852 ・・・・・・・{the layer also covering the sidewalls of the conductive structure}

H01L 21/76853 ・・・・・・{characterized by particular after-treatment steps}

H01L 21/76855 ・・・・・・・{After-treatment introducing at least one additional element into the layer}

H01L 21/76856 ・・・・・・・・{by treatment in plasmas or gaseous environments, e.g. nitriding a refractory metal liner}

H01L 21/76858 ・・・・・・・・{by diffusing alloying elements}

H01L 21/76859 ・・・・・・・・{by ion implantation}

H01L 21/76861 ・・・・・・・{Post-treatment or after-treatment not introducing additional chemical elements into the layer}

H01L 21/76862 ・・・・・・・・{Bombardment with particles, e.g. treatment in noble gas plasmas; UV irradiation}

H01L 21/76864 ・・・・・・・・{Thermal treatment}

H01L 21/76865 ・・・・・・・{Selective removal of parts of the layer (H01L 21/76844 takes precedence)}

H01L 21/76867 ・・・・・・{characterized by methods of formation other than PVD, CVD or deposition from a liquids (PVD H01L 21/2855; CVD H01L 21/28556; deposition from liquids H01L 21/288)}

H01L 21/76868 ・・・・・・{Forming or treating discontinuous thin films, e.g. repair, enhancement or reinforcement of discontinuous thin films}

H01L 21/7687 ・・・・・・{Thin films associated with contacts of capacitors}

H01L 21/76871 ・・・・・・{Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers}

H01L 21/76873 ・・・・・・・{for electroplating}

H01L 21/76874 ・・・・・・・{for electroless plating}

H01L 21/76876 ・・・・・・・{for deposition from the gas phase, e.g. CVD}

H01L 21/76877 ・・・・・{Filling of holes, grooves or trenches, e.g. vias, with conductive material}

H01L 21/76879 ・・・・・・{by selective deposition of conductive material in the vias, e.g. selective C.V.D. on semiconductor material, plating (plating on semiconductors in general H01L 21/288)}

H01L 21/7688 ・・・・・・{by deposition over sacrificial masking layer, e.g. lift-off (lift-off per se H01L 21/00B2)}

H01L 21/76882 ・・・・・・{Reflowing or applying of pressure to better fill the contact hole}

H01L 21/76883 ・・・・・・{Post-treatment or after-treatment of the conductive material}

H01L 21/76885 ・・・・・{By forming conductive members before deposition of protective insulating material, e.g. pillars, studs}

H01L 21/76886 ・・・・・{Modifying permanently or temporarily the pattern or the conductivity of conductive members, e.g. formation of alloys, reduction of contact resistances}

H01L 21/76888 ・・・・・・{By rendering at least a portion of the conductor non conductive, e.g. oxidation}

H01L 21/76889 ・・・・・・{by forming silicides of refractory metals}

H01L 21/76891 ・・・・・・{by using supraconducting materials}

H01L 21/76892 ・・・・・・{modifying the pattern}

H01L 21/76894 ・・・・・・・{using a laser, e.g. laser cutting, laser direct writing, laser repair}

H01L 21/76895 ・・・・・{Local interconnects; Local pads, as exemplified by patent document EP0896365}

H01L 21/76897 ・・・・{Formation of self-aligned vias or contact plugs, i.e. involving a lithographically uncritical step (self-aligned silicidation on field effect transistors H01L 21/336M)}

H01L 21/76898 ・・・・{formed through a semiconductor substrate}

H01L 21/77 ・・Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate

H01L 21/78 ・・・with subsequent division of the substrate into plural individual devices (cutting to change the surface-physical characteristics or shape of semiconductor bodies H01L 21/304)

H01L 21/7806 ・・・・{involving the separation of the active layers from a substrate}

H01L 21/7813 ・・・・・{leaving a reusable substrate, e.g. epitaxial lift off}

H01L 21/782 ・・・・to produce devices, each consisting of a single circuit element (H01L 21/82 takes precedence)

H01L 21/784 ・・・・・the substrate being a semiconductor body

H01L 21/786 ・・・・・the substrate being other than a semiconductor body, e.g. insulating body

H01L 21/82 ・・・・to produce devices, e.g. integrated circuits, each consisting of a plurality of components

H01L 21/8206 ・・・・・{the substrate being a semiconductor, using diamond technology (H01L 21/8258 takes precedence)}

H01L 21/8213 ・・・・・{the substrate being a semiconductor, using SiC technology (H01L 21/8258 takes precedence)}

H01L 21/822 ・・・・・the substrate being a semiconductor, using silicon technology (H01L 21/8258 takes precedence)

H01L 21/8221 ・・・・・・{Three dimensional integrated circuits stacked in different levels}

H01L 21/8222 ・・・・・・Bipolar technology

H01L 21/8224 ・・・・・・・comprising a combination of vertical and lateral transistors

H01L 21/8226 ・・・・・・・comprising merged transistor logic or integrated injection logic

H01L 21/8228 ・・・・・・・Complementary devices, e.g. complementary transistors

H01L 21/82285 ・・・・・・・・{Complementary vertical transistors}

H01L 21/8229 ・・・・・・・Memory structures

H01L 21/8232 ・・・・・・Field-effect technology

H01L 21/8234 ・・・・・・・MIS technology {, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type}

H01L 21/823406 ・・・・・・・・{Combination of charge coupled devices, i.e. CCD, or BBD}

H01L 21/823412 ・・・・・・・・{with a particular manufacturing method of the channel structures, e.g. channel implants, halo or pocket implants, or channel materials}

H01L 21/823418 ・・・・・・・・{with a particular manufacturing method of the source or drain structures, e.g. specific source or drain implants or silicided source or drain structures or raised source or drain structures}

H01L 21/823425 ・・・・・・・・・{manufacturing common source or drain regions between a plurality of conductor-insulator-semiconductor structures}

H01L 21/823431 ・・・・・・・・{with a particular manufacturing method of transistors with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET}

H01L 21/823437 ・・・・・・・・{with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes}

H01L 21/823443 ・・・・・・・・・{silicided or salicided gate conductors}

H01L 21/82345 ・・・・・・・・・{gate conductors with different gate conductor materials or different gate conductor implants, e.g. dual gate structures}

H01L 21/823456 ・・・・・・・・・{gate conductors with different shapes, lengths or dimensions}

H01L 21/823462 ・・・・・・・・{with a particular manufacturing method of the gate insulating layers, e.g. different gate insulating layer thicknesses, particular gate insulator materials or particular gate insulator implants}

H01L 21/823468 ・・・・・・・・{with a particular manufacturing method of the gate sidewall spacers, e.g. double spacers, particular spacer material or shape}

H01L 21/823475 ・・・・・・・・{interconnection or wiring or contact manufacturing related aspects}

H01L 21/823481 ・・・・・・・・{isolation region manufacturing related aspects, e.g. to avoid interaction of isolation region with adjacent structure}

H01L 21/823487 ・・・・・・・・{with a particular manufacturing method of vertical transistor structures, i.e. with channel vertical to the substrate surface (with a current flow parallel to the substrate surface H01L 21/823431)}

H01L 21/823493 ・・・・・・・・{with a particular manufacturing method of the wells or tubs, e.g. twin tubs, high energy well implants, buried implanted layers for lateral isolation (BILLI)}

H01L 21/8236 ・・・・・・・・Combination of enhancement and depletion transistors

H01L 21/8238 ・・・・・・・・Complementary field-effect transistors, e.g. CMOS

H01L 21/823807 ・・・・・・・・・{with a particular manufacturing method of the channel structures, e.g. channel implants, halo or pocket implants, or channel materials}

H01L 21/823814 ・・・・・・・・・{with a particular manufacturing method of the source or drain structures, e.g. specific source or drain implants or silicided source or drain structures or raised source or drain structures}

H01L 21/823821 ・・・・・・・・・{with a particular manufacturing method of transistors with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET}

H01L 21/823828 ・・・・・・・・・{with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes}

H01L 21/823835 ・・・・・・・・・・{silicided or salicided gate conductors}

H01L 21/823842 ・・・・・・・・・・{gate conductors with different gate conductor materials or different gate conductor implants, e.g. dual gate structures}

H01L 21/82385 ・・・・・・・・・・{gate conductors with different shapes, lengths or dimensions}

H01L 21/823857 ・・・・・・・・・{with a particular manufacturing method of the gate insulating layers, e.g. different gate insulating layer thicknesses, particular gate insulator materials or particular gate insulator implants}

H01L 21/823864 ・・・・・・・・・{with a particular manufacturing method of the gate sidewall spacers, e.g. double spacers, particular spacer material or shape}

H01L 21/823871 ・・・・・・・・・{interconnection or wiring or contact manufacturing related aspects}

H01L 21/823878 ・・・・・・・・・{isolation region manufacturing related aspects, e.g. to avoid interaction of isolation region with adjacent structure}

H01L 21/823885 ・・・・・・・・・{with a particular manufacturing method of vertical transistor structures, i.e. with channel vertical to the substrate surface (with a current flow parallel to the substrate surface H01L 21/823821)}

H01L 21/823892 ・・・・・・・・・{with a particular manufacturing method of the wells or tubs, e.g. twin tubs, high energy well implants, buried implanted layers for lateral isolation (BILLI)}

H01L 21/8239 ・・・・・・・・Memory structures

H01L 21/8248 ・・・・・・Combination of bipolar and field-effect technology

H01L 21/8249 ・・・・・・・Bipolar and MOS technology

H01L 21/8252 ・・・・・the substrate being a semiconductor, using III-V technology (H01L 21/8258 takes precedence)

H01L 21/8254 ・・・・・the substrate being a semiconductor, using II-VI technology (H01L 21/8258 takes precedence)

H01L 21/8256 ・・・・・the substrate being a semiconductor, using technologies not covered by one of groups {H01L 21/8206, H01L 21/8213}, H01L 21/822, H01L 21/8252 and H01L 21/8254(H01L 21/8258 takes precedence)

H01L 21/8258 ・・・・・the substrate being a semiconductor, using a combination of technologies covered by {H01L 21/8206, H01L 21/8213}, H01L 21/822, H01L 21/8252, H01L 21/8254 or H01L 21/8256

H01L 21/84 ・・・・・the substrate being other than a semiconductor body, e.g. being an insulating body

H01L 21/845 ・・・・・・{including field-effect transistors with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET}

H01L 21/86 ・・・・・・the insulating body being sapphire, e.g. silicon on sapphire structure, i.e. SOS

H01L 22/00 {Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor (detecting or counting or handling H01L 21/67005; marks applied to semiconductor devices H01L 23/544; testing methods or structures peculiar to devices provided for in groups H01L 31/00 to H01L 51/00, see these groups; investigating or analysing materials by the use of optical means G01N 21/00; testing electrical properties of individual semiconductor devices G01R 31/26; testing of photovoltaic systems H02S 50/00)}

H01L 22/10 ・{Measuring as part of the manufacturing process (burn-in G01R 31/28C8)}

H01L 22/12 ・・{for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions (electrical measurement of diffusions H01L 22/14)}

H01L 22/14 ・・{for electrical parameters, e.g. resistance, deep-levels, CV, diffusions by electrical means}

H01L 22/20 ・{Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps}

H01L 22/22 ・・{Connection or disconnection of sub-entities or redundant parts of a device in response to a measurement (testing and repair of stores after manufacture including at wafer scale G11C 29/00; fuses per se H01L 23/525)}

H01L 22/24 ・・{Optical enhancement of defects or not directly visible states, e.g. selective electrolytic deposition, bubbles in liquids, light emission, colour change (voltage contrast G01R 31/311)}

H01L 22/26 ・・{Acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection, in-situ thickness measurement (endpoint detection arrangements in CMP apparatus B24B 37/013, in discharge apparatus H01J 37/32D1C1)}

H01L 22/30 ・{Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements}

H01L 22/32 ・・{Additional lead-in metallisation on a device or substrate, e.g. additional pads or pad portions, lines in the scribe line, sacrificed conductors (arrangements for conducting electric current to or from the solid state body in operation H01L 23/48)}

H01L 22/34 ・・{Circuits for electrically characterising or monitoring manufacturing processes, e. g. whole test die, wafers filled with test structures, on-board-devices incorporated on each die, process control monitors or pad structures thereof, devices in scribe line (switching, multiplexing, gating devices G01R 19/25; process control with lithography, e.g. dose control, G03F 7/20; structures for alignment control by optical means G03F 7/20T8)}

H01L 23/00 Details of semiconductor or other solid state devices (H01L 25/00 takes precedence; {structural arrangements for testing or measuring during manufacture or treatment, or for reliability measurements H01L 22/00; arrangements for connecting or disconnecting semiconductor or solid-state bodies, or methods related thereto H01L 24/00; finger print sensors G06K 9/00006})

H01L 23/02 ・Containers; Seals (H01L 23/12, H01L 23/34, H01L 23/48, H01L 23/552, {H01L 23/66} take precedence; {for memories G11C})

H01L 23/04 ・・characterised by the shape {of the container or parts, e.g. caps, walls}

H01L 23/041 ・・・{the container being a hollow construction having no base used as a mounting for the semiconductor body}

H01L 23/043 ・・・the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body

H01L 23/045 ・・・・the other leads having an insulating passage through the base

H01L 23/047 ・・・・the other leads being parallel to the base

H01L 23/049 ・・・・the other leads being perpendicular to the base

H01L 23/051 ・・・・another lead being formed by a cover plate parallel to the base plate, e.g. sandwich type

H01L 23/053 ・・・the container being a hollow construction and having an insulating {or insulated} base as a mounting for the semiconductor body

H01L 23/055 ・・・・the leads having a passage through the base {(H01L 23/057 takes precedence)}

H01L 23/057 ・・・・the leads being parallel to the base

H01L 23/06 ・・characterised by the material of the container or its electrical properties

H01L 23/08 ・・・the material being an electrical insulator, e.g. glass

H01L 23/10 ・・characterised by the material or arrangement of seals between parts,ween cap e.g. between cap and base of the container or between leads and walls of the container

H01L 23/12 ・Mountings, e.g. non-detachable insulating substrates

H01L 23/13 ・・characterised by the shape

H01L 23/14 ・・characterised by the material or its electrical properties {(printed circuit boards H05K 1/00)}

H01L 23/142 ・・・{Metallic substrates having insulating layers}

H01L 23/145 ・・・{Organic substrates, e.g. plastic}

H01L 23/147 ・・・{Semiconductor insulating substrates (semiconductor conductive substrates H01L 23/4926)}

H01L 23/15 ・・・Ceramic or glass substrates {(H01L 23/142, H01L 23/145, H01L 23/147 take precedence)}

H01L 23/16 ・Fillings or auxiliary members in containers {or encapsulations}, e.g. centering rings (H01L 23/42, H01L 23/552 take precedence)

H01L 23/18 ・・Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device

H01L 23/20 ・・・gaseous at the normal operating temperature of the device

H01L 23/22 ・・・liquid at the normal operating temperature of the device

H01L 23/24 ・・・Solid or gel at the normal operating temperature of the device {(H01L 23/3135 takes precedence)}

H01L 23/26 ・・・including materials for absorbing or reacting with moisture or other undesired substances, {e.g. getters}

H01L 23/28 ・Encapsulations, e.g. encapsulating layers, coatings, {e.g. for protection}(H01L 23/552 takes precedence; {insulating layers for contacts or interconnections H01L 23/5329})

H01L 23/29 ・・characterised by the material {e.g. carbon (interlayer dielectrics H01L 23/5329)}

H01L 23/291 ・・・{Oxides or nitrides or carbides, e.g. ceramics, glass}

H01L 23/293 ・・・{Organic, e.g. plastic}

H01L 23/295 ・・・・{containing a filler (H01L 23/296 takes precedence)}

H01L 23/296 ・・・・{Organo-silicon compounds}

H01L 23/298 ・・・{Semiconductor material, e.g. amorphous silicon}

H01L 23/31 ・・characterised by the arrangement {or shape}

H01L 23/3107 ・・・{the device being completely enclosed}

H01L 23/3114 ・・・・{the device being a chip scale package, e.g. CSP}

H01L 23/3121 ・・・・{a substrate forming part of the encapsulation}

H01L 23/3128 ・・・・・{the substrate having spherical bumps for external connection}

H01L 23/3135 ・・・・{Double encapsulation or coating and encapsulation}

H01L 23/3142 ・・・・{Sealing arrangements between parts, e.g. adhesion promotors}

H01L 23/315 ・・・・{the encapsulation having a cavity}

H01L 23/3157 ・・・{Partial encapsulation or coating (mask layer used as insulation layer H01L 21/31)}

H01L 23/3164 ・・・・{the coating being a foil}

H01L 23/3171 ・・・・{the coating being directly applied to the semiconductor body, e.g. passivation layer (H01L 23/3178 takes precedence)}

H01L 23/3178 ・・・・{Coating or filling in grooves made in the semiconductor body}

H01L 23/3185 ・・・・{the coating covering also the sidewalls of the semiconductor body}

H01L 23/3192 ・・・・{Multilayer coating}

H01L 23/32 ・Holders for supporting the complete device in operation, i.e. detachable fixtures (H01L 23/40 takes precedence; connectors, {e.g. sockets}, in general H01R; for printed circuits H05K)

H01L 23/34 ・Arrangements for cooling, heating, ventilating or temperature compensation; {Temperature sensing arrangements (thermal treatment apparatus H01L 21/00)}

H01L 23/345 ・・{Arrangements for heating (thermal treatment apparatus H01L 21/00)}

H01L 23/36 ・・Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks {(H01L 23/28, H01L 23/40, H01L 23/42, H01L 23/44, H01L 23/46 take precedence; heating H01L 23/345)}

H01L 23/367 ・・・Cooling facilitated by shape of device {(H01L 23/38, H01L 23/40, H01L 23/42, H01L 23/44, H01L 23/46 take precedence)}

H01L 23/3672 ・・・・{Foil-like cooling fins or heat sinks (being part of lead-frames H01L 23/49568)}

H01L 23/3675 ・・・・{characterised by the shape of the housing}

H01L 23/3677 ・・・・{Wire-like or pin-like cooling fins or heat sinks}

H01L 23/373 ・・・Cooling facilitated by selection of materials for the device {or materials for thermal expansion adaptation, e.g. carbon}

H01L 23/3731 ・・・・{Ceramic materials or glass (H01L 23/3732, H01L 23/3733, H01L 23/3735, H01L 23/3737, H01L 23/3738 take precedence)}

H01L 23/3732 ・・・・{Diamonds}

H01L 23/3733 ・・・・{having a heterogeneous or anisotropic structure, e.g. powder or fibres in a matrix, wire mesh, porous structures (H01L 23/3732, H01L 23/3737 take precedence)}

H01L 23/3735 ・・・・{Laminates or multilayers, e.g. direct bond copper ceramic substrates}

H01L 23/3736 ・・・・{Metallic materials (H01L 23/3732, H01L 23/3733, H01L 23/3735, H01L 23/3737, H01L 23/3738 take precedence)}

H01L 23/3737 ・・・・{Organic materials with or without a thermoconductive filler}

H01L 23/3738 ・・・・{Semiconductor materials}

H01L 23/38 ・・Cooling arrangements using the Peltier effect

H01L 23/40 ・・Mountings or securing means for detachable cooling or heating arrangements {(heating H01L 23/345); fixed by friction, plugs or springs}

H01L 23/4006 ・・・{with bolts or screws}

H01L 23/4012 ・・・・{for stacked arrangements of a plurality of semiconductor devices (assemblies per se H01L 25/00)}

H01L 23/4093 ・・・{Snap-on arrangements, e.g. clips}

H01L 23/42 ・・Fillings or auxiliary members in containers {or encapsulations} selected or arranged to facilitate heating or cooling ({heating H01L 23/345}; characterised by selection of materials for the device H01L 23/373)

H01L 23/427 ・・・Cooling by change of state, e.g. use of heat pipes {(by liquefied gas H01L 23/445)}

H01L 23/4275 ・・・・{by melting or evaporation of solids}

H01L 23/433 ・・・Auxiliary members {in containers} characterised by their shape, e.g. pistons

H01L 23/4332 ・・・・{Bellows}

H01L 23/4334 ・・・・{Auxiliary members in encapsulations (H01L 23/49568 takes precedence)}

H01L 23/4336 ・・・・{in combination with jet impingement}

H01L 23/4338 ・・・・{Pistons, e.g. spring-loaded members}

H01L 23/44 ・・the complete device being wholly immersed in a fluid other than air {(H01L 23/427 takes precedence)}

H01L 23/445 ・・・{the fluid being a liquefied gas, e.g. in a cryogenic vessel}

H01L 23/46 ・・involving the transfer of heat by flowing fluids (H01L 23/42, H01L 23/44 take precedence)

H01L 23/467 ・・・by flowing gases, e.g. air {(H01L 23/473 takes precedence)}

H01L 23/473 ・・・by flowing liquids {(H01L 23/4332, H01L 23/4338 take precedence)}

H01L 23/4735 ・・・・{Jet impingement (H01L 23/4336 takes precedence)}

H01L 23/48 ・Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements (in general H01R); {Selection of materials therefor}

H01L 23/481 ・・{Internal lead connections, e.g. via connections, feedthrough structures}

H01L 23/482 ・・consisting of lead-in layers inseparably applied to the semiconductor body {(electrodes H01L 29/40)}

H01L 23/4821 ・・・{Bridge structure with air gap}

H01L 23/4822 ・・・{Beam leads}

H01L 23/4824 ・・・{Pads with extended contours, e.g. grid structure, branch structure, finger structure}

H01L 23/4825 ・・・{for devices consisting of semiconductor layers on insulating or semi-insulating substrates, e.g. silicon on sapphire devices, i.e. SOS}

H01L 23/4827 ・・・{Materials}

H01L 23/4828 ・・・・{Conductive organic material or pastes, e.g. conductive adhesives, inks}

H01L 23/485 ・・・consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts {(H01L 23/4821, H01L 23/4822, H01L 23/4824, H01L 23/4825 take precedence; materials H01L 23/532, bond pads H01L 24/02, bump connectors H01L 24/10)}

H01L 23/4855 ・・・・{Overhang structure}

H01L 23/488 ・・consisting of soldered {or bonded} constructions {(bump connectors H01L 24/01)}

H01L 23/49 ・・・Wire-like {arrangements or pins or rods (using optical fibres H01L 23/48; pins attached to insulating substrates H01L 23/49811)}

H01L 23/492 ・・・Bases or plates {or solder therefor}

H01L 23/4922 ・・・・{having a heterogeneous or anisotropic structure}

H01L 23/4924 ・・・・{characterised by the materials}

H01L 23/4926 ・・・・・{the materials containing semiconductor material}

H01L 23/4928 ・・・・・{the materials containing carbon}

H01L 23/495 ・・・Lead-frames {or other flat leads (H01L 23/498 takes precedence; lead frame interconnections between components H01L 23/52)}

H01L 23/49503 ・・・・{characterised by the die pad}

H01L 23/49506 ・・・・・{an insulative substrate being used as a diepad, e.g. ceramic, plastic (H01L 23/49531 takes precedence)}

H01L 23/4951 ・・・・・{Chip-on-leads or leads-on-chip techniques, i.e. inner lead fingers being used as die pad}

H01L 23/49513 ・・・・・{having bonding material between chip and die pad}

H01L 23/49517 ・・・・{Additional leads}

H01L 23/4952 ・・・・・{the additional leads being a bump or a wire}

H01L 23/49524 ・・・・・{the additional leads being a tape carrier or flat leads}

H01L 23/49527 ・・・・・{the additional leads being a multilayer}

H01L 23/49531 ・・・・・{the additional leads being a wiring board}

H01L 23/49534 ・・・・{Multi-layer}

H01L 23/49537 ・・・・{Plurality of lead frames mounted in one device}

H01L 23/49541 ・・・・{Geometry of the lead-frame}

H01L 23/49544 ・・・・・{Deformation absorbing parts in the lead frame plane, e.g. meanderline shape (H01L 23/49562 takes precedence)}

H01L 23/49548 ・・・・・{Cross section geometry (H01L 23/49562 takes precedence)}

H01L 23/49551 ・・・・・・{characterised by bent parts}

H01L 23/49555 ・・・・・・・{the bent parts being the outer leads}

H01L 23/49558 ・・・・・{Insulating layers on lead frames, e.g. bridging members}

H01L 23/49562 ・・・・・{for devices being provided for in H01L 29/00}

H01L 23/49565 ・・・・・{Side rails of the lead frame, e.g. with perforations, sprocket holes}

H01L 23/49568 ・・・・{specifically adapted to facilitate heat dissipation}

H01L 23/49572 ・・・・{consisting of thin flexible metallic tape with or without a film carrier (H01L 23/49503 to H01L 23/49568 and H01L 23/49575 to H01L 23/49579 take precedence)}

H01L 23/49575 ・・・・{Assemblies of semiconductor devices on lead frames}

H01L 23/49579 ・・・・{characterised by the materials of the lead frames or layers thereon}

H01L 23/49582 ・・・・・{Metallic layers on lead frames}

H01L 23/49586 ・・・・・{Insulating layers on lead frames}

H01L 23/49589 ・・・・{Capacitor integral with or on the leadframe}

H01L 23/49593 ・・・・{Battery in combination with a leadframe}

H01L 23/49596 ・・・・{Oscillators in combination with lead-frames}

H01L 23/498 ・・・Leads, {i.e. metallisations or lead-frames} on insulating substrates, {e.g. chip carriers (shape of the substrate H01L 23/13)}

H01L 23/49805 ・・・・{the leads being also applied on the sidewalls or the bottom of the substrate, e.g. leadless packages for surface mounting}

H01L 23/49811 ・・・・{Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads (H01L 23/49827 takes precedence)}

H01L 23/49816 ・・・・・{Spherical bumps on the substrate for external connection, e.g. ball grid arrays (BGA)}

H01L 23/49822 ・・・・{Multilayer substrates (multilayer metallisation on monolayer substrate H01L 23/498)}

H01L 23/49827 ・・・・{Via connections through the substrates, e.g. pins going through the substrate, coaxial cables (H01L 23/49822, H01L 23/49833, H01L 23/4985, H01L 23/49861 take precedence)}

H01L 23/49833 ・・・・{the chip support structure consisting of a plurality of insulating substrates}

H01L 23/49838 ・・・・{Geometry or layout}

H01L 23/49844 ・・・・・{for devices being provided for in H01L 29/00}

H01L 23/4985 ・・・・{Flexible insulating substrates (H01L 23/49572 and H01L 23/49855 take precedence)}

H01L 23/49855 ・・・・{for flat-cards, e.g. credit cards (cards per se G06K 19/00)}

H01L 23/49861 ・・・・{Lead-frames fixed on or encapsulated in insulating substrates (H01L 23/4985, H01L 23/49805 take precedence)}

H01L 23/49866 ・・・・{characterised by the materials (materials of the substrates H01L 23/14, of the lead-frames H01L 23/49579)}

H01L 23/49872 ・・・・・{the conductive materials containing semiconductor material}

H01L 23/49877 ・・・・・{Carbon, e.g. fullerenes (superconducting fullerenes H01L 39/123)}

H01L 23/49883 ・・・・・{the conductive materials containing organic materials or pastes, e.g. for thick films (for printed circuits H05K 1/092)}

H01L 23/49888 ・・・・・{the conductive materials containing superconducting material}

H01L 23/49894 ・・・・・{Materials of the insulating layers or coatings}

H01L 23/50 ・・for integrated circuit devices, {e.g. power bus, number of leads}(H01L 23/482 to H01L 23/498 take precedence)

H01L 23/52 ・Arrangements for conducting electric current within the device in operation from one component to another, {i.e. interconnections, e.g. wires, lead frames (optical interconnections G02B 6/00)}

H01L 23/522 ・・including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body

H01L 23/5221 ・・・{Crossover interconnections}

H01L 23/5222 ・・・{Capacitive arrangements or effects of, or between wiring layers (other capacitive arrangements H01L 23/642)}

H01L 23/5223 ・・・・{Capacitor integral with wiring layers}

H01L 23/5225 ・・・・{Shielding layers formed together with wiring layers}

H01L 23/5226 ・・・{Via connections in a multilevel interconnection structure}

H01L 23/5227 ・・・{Inductive arrangements or effects of, or between, wiring layers (other inductive arrangements H01L 23/645)}

H01L 23/5228 ・・・{Resistive arrangements or effects of, or between, wiring layers (other resistive arrangements H01L 23/647)}

H01L 23/525 ・・・with adaptable interconnections

H01L 23/5252 ・・・・{comprising anti-fuses, i.e. connections having their state changed from non-conductive to conductive}

H01L 23/5254 ・・・・・{the change of state resulting from the use of an external beam, e.g. laser beam or ion beam}

H01L 23/5256 ・・・・{comprising fuses, i.e. connections having their state changed from conductive to non-conductive}

H01L 23/5258 ・・・・・{the change of state resulting from the use of an external beam, e.g. laser beam or ion beam}

H01L 23/528 ・・・{Geometry or} layout of the interconnection structure {(H01L 27/0207 takes precedence; algorithms G06F 17/50)}

H01L 23/5283 ・・・・{Cross-sectional geometry}

H01L 23/5286 ・・・・{Arrangements of power or ground buses}

H01L 23/532 ・・・characterised by the materials

H01L 23/53204 ・・・・{Conductive materials}

H01L 23/53209 ・・・・・{based on metals, e.g. alloys, metal silicides (H01L 23/53285 takes precedence)}

H01L 23/53214 ・・・・・・{the principal metal being aluminium}

H01L 23/53219 ・・・・・・・{Aluminium alloys}

H01L 23/53223 ・・・・・・・{Additional layers associated with aluminium layers, e.g. adhesion, barrier, cladding layers}

H01L 23/53228 ・・・・・・{the principal metal being copper}

H01L 23/53233 ・・・・・・・{Copper alloys}

H01L 23/53238 ・・・・・・・{Additional layers associated with copper layers, e.g. adhesion, barrier, cladding layers}

H01L 23/53242 ・・・・・・{the principal metal being a noble metal, e.g. gold}

H01L 23/53247 ・・・・・・・{Noble-metal alloys}

H01L 23/53252 ・・・・・・・{Additional layers associated with noble-metal layers, e.g. adhesion, barrier, cladding layers}

H01L 23/53257 ・・・・・・{the principal metal being a refractory metal}

H01L 23/53261 ・・・・・・・{Refractory-metal alloys}

H01L 23/53266 ・・・・・・・{Additional layers associated with refractory-metal layers, e.g. adhesion, barrier, cladding layers}

H01L 23/53271 ・・・・・{containing semiconductor material, e.g. polysilicon}

H01L 23/53276 ・・・・・{containing carbon, e.g. fullerenes (superconducting fullerenes H01L 39/123)}

H01L 23/5328 ・・・・・{containing conductive organic materials or pastes, e.g. conductive adhesives, inks}

H01L 23/53285 ・・・・・{containing superconducting materials}

H01L 23/5329 ・・・・{Insulating materials}

H01L 23/53295 ・・・・・{Stacked insulating layers}

H01L 23/535 ・・including internal interconnections, e.g. cross-under constructions {(internal lead connections H01L 23/481)}

H01L 23/538 ・・the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates ({H05K takes precedence; manufacture or treatment H01L 21/4846}; mountings per se H01L 23/12; {materials H01L 23/49866})

H01L 23/5381 ・・・{Crossover interconnections, e.g. bridge stepovers}

H01L 23/5382 ・・・{Adaptable interconnections, e.g. for engineering changes}

H01L 23/5383 ・・・{Multilayer substrates (H01L 23/5385 takes precedence; multilayer metallisation on monolayer substrates H01L 23/538)}

H01L 23/5384 ・・・{Conductive vias through the substrate with or without pins, e.g. buried coaxial conductors (H01L 23/5383, H01L 23/5385 take precedence; pins attached to insulating substrates H01L 23/49811)}

H01L 23/5385 ・・・{Assembly of a plurality of insulating substrates}

H01L 23/5386 ・・・{Geometry or layout of the interconnection structure}

H01L 23/5387 ・・・{Flexible insulating substrates (H01L 23/5388 takes precedence)}

H01L 23/5388 ・・・{for flat cards, e.g. credit cards (cards per se G06K 19/00)}

H01L 23/5389 ・・・{the chips being integrally enclosed by the interconnect and support structures}

H01L 23/544 ・Marks applied to semiconductor devices {or parts}, e.g. registration marks, {alignment structures, wafer maps (test patterns for characterising or monitoring manufacturing processes H01L 22/00)}

H01L 23/552 ・Protection against radiation, e.g. light {or electromagnetic waves}

H01L 23/556 ・・against alpha rays

H01L 23/562 ・{Protection against mechanical damage (H01L 23/02, H01L 23/28 take precedence)}

H01L 23/564 ・{Details not otherwise provided for, e.g. protection against moisture (getters H01L 23/26)}

H01L 23/57 ・{Protection from inspection, reverse engineering or tampering}

H01L 23/573 ・・{using passive means}

H01L 23/576 ・・{using active circuits}

H01L 23/58 ・Structural electrical arrangements for semiconductor devices not otherwise provided for, {e.g. in combination with batteries (H01L 23/49593, H01L 23/49596 take precedence)}

H01L 23/585 ・・{comprising conductive layers or plates or strips or rods or rings (H01L 23/60, H01L 23/62, H01L 23/64, H01L 23/66 take precedence)}

H01L 23/60 ・・Protection against electrostatic charges or discharges, e.g. Faraday shields (in general H05F)

H01L 23/62 ・・Protection against overvoltage, e.g. fuses, shunts

H01L 23/64 ・・Impedance arrangements

H01L 23/642 ・・・{Capacitive arrangements (H01L 23/49589, H01L 23/645, H01L 23/647, H01L 23/66 take precedence; capacitive effects between wiring layers on the semiconductor body H01L 23/5222)}

H01L 23/645 ・・・{Inductive arrangements (H01L 23/647, H01L 23/66 take precedence)}

H01L 23/647 ・・・{Resistive arrangements (H01L 23/66, H01L 23/62 take precedence)}

H01L 23/66 ・・・High-frequency adaptations

H01L 24/00 {Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto}

H01L 24/01 ・{Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto}

H01L 24/02 ・・{Bonding areas (on insulating substrates, e.g. chip carriers, H01L 23/49816, H01L 23/49838, H01L 23/5389); Manufacturing methods related thereto}

H01L 24/03 ・・・{Manufacturing methods}

H01L 24/04 ・・・{Structure, shape, material or disposition of the bonding areas prior to the connecting process}

H01L 24/05 ・・・・{of an individual bonding area}

H01L 24/06 ・・・・{of a plurality of bonding areas}

H01L 24/07 ・・・{Structure, shape, material or disposition of the bonding areas after the connecting process}

H01L 24/08 ・・・・{of an individual bonding area}

H01L 24/09 ・・・・{of a plurality of bonding areas}

H01L 24/10 ・・{Bump connectors (bumps on insulating substrates, e.g. chip carriers,H01L 23/49816); Manufacturing methods related thereto}

H01L 24/11 ・・・{Manufacturing methods (for bumps on insulating substrates H01L 21/4853)}

H01L 24/12 ・・・{Structure, shape, material or disposition of the bump connectors prior to the connecting process}

H01L 24/13 ・・・・{of an individual bump connector}

H01L 24/14 ・・・・{of a plurality of bump connectors}

H01L 24/15 ・・・{Structure, shape, material or disposition of the bump connectors after the connecting process}

H01L 24/16 ・・・・{of an individual bump connector}

H01L 24/17 ・・・・{of a plurality of bump connectors}

H01L 24/18 ・・{High density interconnect [HDI} connectors; Manufacturing methods related thereto (interconnection structure between a plurality of semiconductor chips H01L 23/5389)]

H01L 24/19 ・・・{Manufacturing methods of high density interconnect preforms}

H01L 24/20 ・・・{Structure, shape, material or disposition of high density interconnect preforms}

H01L 24/23 ・・・{Structure, shape, material or disposition of the high density interconnect connectors after the connecting process}

H01L 24/24 ・・・・{of an individual high density interconnect connector}

H01L 24/25 ・・・・{of a plurality of high density interconnect connectors}

H01L 24/26 ・・{Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto}

H01L 24/27 ・・・{Manufacturing methods}

H01L 24/28 ・・・{Structure, shape, material or disposition of the layer connectors prior to the connecting process}

H01L 24/29 ・・・・{of an individual layer connector}

H01L 24/30 ・・・・{of a plurality of layer connectors}

H01L 24/31 ・・・{Structure, shape, material or disposition of the layer connectors after the connecting process}

H01L 24/32 ・・・・{of an individual layer connector}

H01L 24/33 ・・・・{of a plurality of layer connectors}

H01L 24/34 ・・{Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto}

H01L 24/35 ・・・{Manufacturing methods}

H01L 24/36 ・・・{Structure, shape, material or disposition of the strap connectors prior to the connecting process}

H01L 24/37 ・・・・{of an individual strap connector}

H01L 24/38 ・・・・{of a plurality of strap connectors}

H01L 24/39 ・・・{Structure, shape, material or disposition of the strap connectors after the connecting process}

H01L 24/40 ・・・・{of an individual strap connector}

H01L 24/41 ・・・・{of a plurality of strap connectors}

H01L 24/42 ・・{Wire connectors; Manufacturing methods related thereto}

H01L 24/43 ・・・{Manufacturing methods}

H01L 24/44 ・・・{Structure, shape, material or disposition of the wire connectors prior to the connecting process}

H01L 24/45 ・・・・{of an individual wire connector}

H01L 24/46 ・・・・{of a plurality of wire connectors}

H01L 24/47 ・・・{Structure, shape, material or disposition of the wire connectors after the connecting process}

H01L 24/48 ・・・・{of an individual wire connector}

H01L 24/49 ・・・・{of a plurality of wire connectors}

H01L 24/50 ・・{Tape automated bonding [TAB} connectors, i.e. film carriers; Manufacturing methods related thereto (thin flexible metallic tape with or without a film carrier H01L 23/49572, flexible insulating substrates H01L 23/4985, H01L 23/5387)]

H01L 24/63 ・・{Connectors not provided for in any of the groups H01L 24/10 to H01L 24/50 and subgroups; Manufacturing methods related thereto}

H01L 24/64 ・・・{Manufacturing methods}

H01L 24/65 ・・・{Structure, shape, material or disposition of the connectors prior to the connecting process}

H01L 24/66 ・・・・{of an individual connector}

H01L 24/67 ・・・・{of a plurality of connectors}

H01L 24/68 ・・・{Structure, shape, material or disposition of the connectors after the connecting process}

H01L 24/69 ・・・・{of an individual connector}

H01L 24/70 ・・・・{of a plurality of connectors}

H01L 24/71 ・{Means for bonding not being attached to, or not being formed on, the surface to be connected (holders for supporting the complete device in operation H01L 23/32)}

H01L 24/72 ・・{Detachable connecting means consisting of mechanical auxiliary parts connecting the device, e.g. pressure contacts using springs or clips}

H01L 24/73 ・{Means for bonding being of different types provided for in two or more of groups H01L 24/10, H01L 24/18, H01L 24/26, H01L 24/34, H01L 24/42, H01L 24/50, H01L 24/63, H01L 24/71}

H01L 24/74 ・{Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies}

H01L 24/741 ・・{Apparatus for manufacturing means for bonding, e.g. connectors}

H01L 24/742 ・・・{Apparatus for manufacturing bump connectors}

H01L 24/743 ・・・{Apparatus for manufacturing layer connectors}

H01L 24/744 ・・・{Apparatus for manufacturing strap connectors}

H01L 24/745 ・・・{Apparatus for manufacturing wire connectors}

H01L 24/75 ・・{Apparatus for connecting with bump connectors or layer connectors}

H01L 24/76 ・・{Apparatus for connecting with build-up interconnects}

H01L 24/77 ・・{Apparatus for connecting with strap connectors}

H01L 24/78 ・・{Apparatus for connecting with wire connectors}

H01L 24/79 ・・{Apparatus for Tape Automated Bonding [TAB]}

H01L 24/799 ・・{Apparatus for disconnecting}

H01L 24/80 ・{Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected}

H01L 24/81 ・・{using a bump connector}

H01L 24/82 ・・{by forming build-up interconnects at chip-level, e.g. for high density interconnects [HDI}(interconnection structure between a plurality of semiconductor chips H01L 23/5389)]

H01L 24/83 ・・{using a layer connector}

H01L 24/84 ・・{using a strap connector}

H01L 24/85 ・・{using a wire connector (wire bonding in general B23K 20/004)}

H01L 24/86 ・・{using tape automated bonding [TAB}]

H01L 24/89 ・・{using at least one connector not provided for in any of the groups H01L 24/81 to H01L 24/86}

H01L 24/90 ・{Methods for connecting semiconductor or solid state bodies using means for bonding not being attached to, or not being formed on, the body surface to be connected, e.g. pressure contacts using springs or clips}

H01L 24/91 ・{Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L 24/80 to H01L 24/90}

H01L 24/92 ・・{Specific sequence of method steps}

H01L 24/93 ・{Batch processes}

H01L 24/94 ・・{at wafer-level, i.e. with connecting carried out on a wafer comprising a plurality of undiced individual devices}

H01L 24/95 ・・{at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips}

H01L 24/96 ・・・{the devices being encapsulated in a common layer, e.g. neo-wafer or pseudo-wafer, said common layer being separable into individual assemblies after connecting}

H01L 24/97 ・・・{the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting}

H01L 24/98 ・{Methods for disconnecting semiconductor or solid-state bodies}

H01L 25/00 Assemblies consisting of a plurality of individual semiconductor or other solid state devices {; Multistep manufacturing processes thereof}({lead frames with assemblies of semiconductor devices thereon H01L 23/49575; assembling semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L 21/06 to H01L 21/326, e.g. sealing of a cap to a base of a container, H01L 21/50}; devices consisting of a plurality of solid state components formed in or on a common substrate H01L 27/00; assemblies of photoelectric cells H01L 31/042, {H01G 9/20}; generators using solar cells or solar panels {H02S}; details of complete circuit assemblies for which provision exists in another subclass, e.g. details of television receivers, see the relevant subclass, e.g. H04N; details of assemblies of electrical components in general H05K)

H01L 25/03 ・all the devices being of a type provided for in the same subgroup of groups H01L 27/00 to H01L 51/00, e.g. assemblies of rectifier diodes

H01L 25/04 ・・the devices not having separate containers

H01L 25/041 ・・・{the devices being of a type provided for in group H01L 31/00}

H01L 25/042 ・・・・{the devices being arranged next to each other (solar cells H01L 31/042)}

H01L 25/043 ・・・・{Stacked arrangements of devices}

H01L 25/045 ・・・・・{the devices being solar cells}

H01L 25/046 ・・・{the devices being of a type provided for in group H01L 51/00}

H01L 25/047 ・・・・{the devices being of a type provided for in group H01L 51/42, e.g. photovoltaic modules based on organic solar cells}

H01L 25/048 ・・・・{the devices being of a type provided for in group H01L 51/50 , e.g. assembly of organic light emitting devices}

H01L 25/065 ・・・the devices being of a type provided for in group H01L 27/00

H01L 25/0652 ・・・・{the devices being arranged next and on each other, i.e. mixed assemblies}

H01L 25/0655 ・・・・{the devices being arranged next to each other}

H01L 25/0657 ・・・・{Stacked arrangements of devices}

H01L 25/07 ・・・the devices being of a type provided for in group H01L 29/00

H01L 25/071 ・・・・{the devices being arranged next and on each other, i.e. mixed assemblies}

H01L 25/072 ・・・・{the devices being arranged next to each other}

H01L 25/073 ・・・・{Apertured devices mounted on one or more rods passed through the apertures}

H01L 25/074 ・・・・{Stacked arrangements of non-apertured devices}

H01L 25/075 ・・・the devices being of a type provided for in group H01L 33/00

H01L 25/0753 ・・・・{the devices being arranged next to each other}

H01L 25/0756 ・・・・{Stacked arrangements of devices}

H01L 25/10 ・・the devices having separate containers

H01L 25/105 ・・・{the devices being of a type provided for in group H01L 27/00}

H01L 25/11 ・・・the devices being of a type provided for in group H01L 29/00

H01L 25/112 ・・・・{Mixed assemblies}

H01L 25/115 ・・・・{the devices being arranged next to each other}

H01L 25/117 ・・・・{Stacked arrangements of devices}

H01L 25/13 ・・・the devices being of a type provided for in group H01L 33/00

H01L 25/16 ・the devices being of types provided for in two or more different main groups ofH01L 27/00 toH01L 49/00{andH01L 51/00}, e.g. forming hybrid circuits{(interconnections for hybrid circuitsH01L 23/5389)}

H01L 25/162 ・・{the devices being mounted on two or more different substrates}

H01L 25/165 ・・{Containers}

H01L 25/167 ・・{comprising optoelectronic devices, e.g. LED, photodiodes}

H01L 25/18 ・the devices being of types provided for in two or more different subgroups of the same main group of groups H01L 27/00 to H01L 51/00{(comprising devices provided for in H01L 27/144 and subgroups, see H01L 27/144 and subgroups)}

H01L 25/50 ・{Multistep manufacturing processes of assemblies consisting of devices, each device being of a type provided for in group H01L 27/00 or H01L 29/00(H01L 21/50 takes precedence)}

H01L 27/00 Devices consisting of a plurality of semiconductor or other solid state components formed in or on a common substrate (processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof H01L 21/70, H01L 31/00 to H01L 51/00; details thereof H01L 23/00, H01L 29/00 to H01L 51/00; assemblies consisting of a plurality of individual solid state devices H01L 25/00; assemblies of electrical components in general H05K)

H01L 27/01 ・comprising only passive thin-film or thick-film elements formed on a common insulating substrate {(passive two-terminal components without a potential-jump or surface barrier for integrated circuits, details thereof and multistep manufacturing processes therefor H01L 28/00)}

H01L 27/013 ・・{Thick-film circuits}

H01L 27/016 ・・{Thin-film circuits}

H01L 27/02 ・including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier

H01L 27/0203 ・・{Particular design considerations for integrated circuits}

H01L 27/0207 ・・・{Geometrical layout of the components, e.g. computer aided design; custom LSI, semi-custom LSI, standard cell technique}

H01L 27/0211 ・・・・{adapted for requirements of temperature (cooling arrangements per se H01L 23/34)}

H01L 27/0214 ・・・{for internal polarisation, e.g. I2L}

H01L 27/0218 ・・・・{of field effect structures}

H01L 27/0222 ・・・・・{Charge pumping, substrate bias generation structures (circuits G05F 3/205)}

H01L 27/0225 ・・・・・{Charge injection in static induction transistor logic structures, i.e. SITL (circuits H03K 19/0912)}

H01L 27/0229 ・・・・{of bipolar structures}

H01L 27/0233 ・・・・・{Integrated injection logic structures, i.e. I2L (circuits H03K 19/091)}

H01L 27/0237 ・・・・・・{using vertical injector structures}

H01L 27/024 ・・・・・・{using field effect injector structures}

H01L 27/0244 ・・・・・・{I2L structures integrated in combination with analog structures}

H01L 27/0248 ・・・{for electrical or thermal protection, e.g. electrostatic discharge [ESD} protection (emergency protective circuit arrangements H02H; circuit arrangements for protecting electronic switches H03K 17/08; circuit arrangements for protecting logic circuits H03K 19/003)]

H01L 27/0251 ・・・・{for MOS devices}

H01L 27/0255 ・・・・・{using diodes as protective elements (diode connected field effect transistors H01L 27/0266; diode connected bipolar transistors H01L 27/0259)}

H01L 27/0259 ・・・・・{using bipolar transistors as protective elements}

H01L 27/0262 ・・・・・・{including a PNP transistor and a NPN transistor, wherein each of said transistors has its base coupled to the collector of the other transistor, e.g. silicon controlled rectifier [SCR} devices]

H01L 27/0266 ・・・・・{using field effect transistors as protective elements}

H01L 27/027 ・・・・・・{specially adapted to provide an electrical current path other than the field effect induced current path}

H01L 27/0274 ・・・・・・・{involving a parasitic bipolar transistor triggered by the electrical biasing of the gate electrode of the field effect transistor, e.g. gate coupled transistors}

H01L 27/0277 ・・・・・・・{involving a parasitic bipolar transistor triggered by the local electrical biasing of the layer acting as base of said parasitic bipolar transistor}

H01L 27/0281 ・・・・・・{field effect transistors in a "Darlington-like" configuration}

H01L 27/0285 ・・・・・・{bias arrangements for gate electrode of field effect transistors, e.g. RC networks, voltage partitioning circuits (H01L 27/0281 takes precedence)}

H01L 27/0288 ・・・・・{using passive elements as protective elements, e.g. resistors, capacitors, inductors, spark-gaps}

H01L 27/0292 ・・・・・{using a specific configuration of the conducting means connecting the protective devices, e.g. ESD buses}

H01L 27/0296 ・・・・・{involving a specific disposition of the protective devices}

H01L 27/04 ・・the substrate being a semiconductor body

H01L 27/06 ・・・including a plurality of individual components in a non-repetitive configuration

H01L 27/0605 ・・・・{integrated circuits made of compound material, e.g. AIIIBV}

H01L 27/0611 ・・・・{integrated circuits having a two-dimensional layout of components without a common active region}

H01L 27/0617 ・・・・・{comprising components of the field-effect type (H01L 27/0251 takes precedence)}

H01L 27/0623 ・・・・・・{in combination with bipolar transistors}

H01L 27/0629 ・・・・・・{in combination with diodes, or resistors, or capacitors}

H01L 27/0635 ・・・・・・{in combination with bipolar transistors and diodes, or resistors, or capacitors}

H01L 27/0641 ・・・・・{without components of the field effect type}

H01L 27/0647 ・・・・・・{Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. vertical bipolar transistor and bipolar lateral transistor and resistor}

H01L 27/0652 ・・・・・・・{Vertical bipolar transistor in combination with diodes, or capacitors, or resistors}

H01L 27/0658 ・・・・・・・・{Vertical bipolar transistor in combination with resistors or capacitors}

H01L 27/0664 ・・・・・・・・{Vertical bipolar transistor in combination with diodes}

H01L 27/067 ・・・・・・・{Lateral bipolar transistor in combination with diodes, or capacitors, or resistors}

H01L 27/0676 ・・・・・・{comprising combinations of diodes, or capacitors or resistors}

H01L 27/0682 ・・・・・・・{comprising combinations of capacitors and resistors}

H01L 27/0688 ・・・・{Integrated circuits having a three-dimensional layout}

H01L 27/0694 ・・・・・{comprising components formed on opposite sides of a semiconductor substrate}

H01L 27/07 ・・・・the components having an active region in common

H01L 27/0705 ・・・・・{comprising components of the field effect type}

H01L 27/0711 ・・・・・・{in combination with bipolar transistors and diodes, or capacitors, or resistors}

H01L 27/0716 ・・・・・・・{in combination with vertical bipolar transistors and diodes, or capacitors, or resistors}

H01L 27/0722 ・・・・・・・{in combination with lateral bipolar transistors and diodes, or capacitors, or resistors}

H01L 27/0727 ・・・・・・{in combination with diodes, or capacitors or resistors}

H01L 27/0733 ・・・・・・・{in combination with capacitors only}

H01L 27/0738 ・・・・・・・{in combination with resistors only}

H01L 27/0744 ・・・・・{without components of the field effect type}

H01L 27/075 ・・・・・・{Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. lateral bipolar transistor, and vertical bipolar transistor and resistor}

H01L 27/0755 ・・・・・・・{Vertical bipolar transistor in combination with diodes, or capacitors, or resistors}

H01L 27/0761 ・・・・・・・・{Vertical bipolar transistor in combination with diodes only}

H01L 27/0766 ・・・・・・・・・{with Schottky diodes only}

H01L 27/0772 ・・・・・・・・{Vertical bipolar transistor in combination with resistors only}

H01L 27/0777 ・・・・・・・・{Vertical bipolar transistor in combination with capacitors only}

H01L 27/0783 ・・・・・・・{Lateral bipolar transistors in combination with diodes, or capacitors, or resistors}

H01L 27/0788 ・・・・・・{comprising combinations of diodes or capacitors or resistors}

H01L 27/0794 ・・・・・・・{Combinations of capacitors and resistors}

H01L 27/08 ・・・including only semiconductor components of a single kind

H01L 27/0802 ・・・・{Resistors only}

H01L 27/0805 ・・・・{Capacitors only}

H01L 27/0808 ・・・・・{Varactor diodes}

H01L 27/0811 ・・・・・{MIS diodes}

H01L 27/0814 ・・・・{Diodes only}

H01L 27/0817 ・・・・{Thyristors only}

H01L 27/082 ・・・・including bipolar components only

H01L 27/0821 ・・・・・{Combination of lateral and vertical transistors only}

H01L 27/0823 ・・・・・{including vertical bipolar transistors only}

H01L 27/0825 ・・・・・・{Combination of vertical direct transistors of the same conductivity type having different characteristics, (e.g. Darlington transistors)}

H01L 27/0826 ・・・・・・{Combination of vertical complementary transistors}

H01L 27/0828 ・・・・・・{Combination of direct and inverse vertical transistors}

H01L 27/085 ・・・・{including field-effect components only}

H01L 27/088 ・・・・・the components being field-effect transistors with insulated gate

H01L 27/0883 ・・・・・・{Combination of depletion and enhancement field effect transistors}

H01L 27/0886 ・・・・・・{including transistors with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET}

H01L 27/092 ・・・・・・Complementary MIS field-effect transistors

H01L 27/0921 ・・・・・・・{Means for preventing a bipolar, e.g. thyristor, action between the different transistor regions, e.g. Latchup prevention}

H01L 27/0922 ・・・・・・・{Combination of complementary transistors having a different structure, e.g. stacked CMOS, high-voltage and low-voltage CMOS}

H01L 27/0924 ・・・・・・・{including transistors with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET}

H01L 27/0925 ・・・・・・・{comprising an N-well only in the substrate}

H01L 27/0927 ・・・・・・・{comprising a P-well only in the substrate}

H01L 27/0928 ・・・・・・・{comprising both N- and P- wells in the substrate, e.g. twin-tub}

H01L 27/095 ・・・・・the components being Schottky barrier gate field-effect transistors

H01L 27/098 ・・・・・the components being PN junction gate field-effect transistors

H01L 27/10 ・・・including a plurality of individual components in a repetitive configuration

H01L 27/101 ・・・・{including resistors or capacitors only}

H01L 27/102 ・・・・including bipolar components

H01L 27/1021 ・・・・・{including diodes only}

H01L 27/1022 ・・・・・{including bipolar transistors}

H01L 27/1023 ・・・・・・{Bipolar dynamic random access memory structures (circuits G11C 11/24, G11C 11/34)}

H01L 27/1024 ・・・・・・{Arrays of single bipolar transistors only, e.g. read only memory structures}

H01L 27/1025 ・・・・・・{Static bipolar memory cell structures (circuits G11C 11/40)}

H01L 27/1026 ・・・・・・{Bipolar electrically programmable memory structures (using fuses H01L 23/525)}

H01L 27/1027 ・・・・・{Thyristors}

H01L 27/1028 ・・・・・{Double base diodes}

H01L 27/105 ・・・・including field-effect components

H01L 27/1052 ・・・・・{Memory structures and multistep manufacturing processes therefor not provided for in groups H01L 27/1055 to H01L 27/112}

H01L 27/1055 ・・・・・{comprising charge coupled devices of the so-called bucket brigade type}

H01L 27/1057 ・・・・・{comprising charge coupled devices (CCD) or charge injection devices (CID)}

H01L 27/108 ・・・・・Dynamic random access memory structures (circuits G11C 1/24, G11C 11/34)

H01L 27/10802 ・・・・・・{comprising floating-body transistors, e.g. floating-body cells (floating-body transistors per se H01L 29/7841)}

H01L 27/10805 ・・・・・・{with one-transistor one-capacitor memory cells}

H01L 27/10808 ・・・・・・・{the storage electrode stacked over transistor}

H01L 27/10811 ・・・・・・・・{with bit line higher than capacitor}

H01L 27/10814 ・・・・・・・・{with capacitor higher than bit line level}

H01L 27/10817 ・・・・・・・・{the storage electrode having multiple wings}

H01L 27/1082 ・・・・・・・{the capacitor extending under transfer transistor area}

H01L 27/10823 ・・・・・・・{the transistor having a trench structure in the substrate}

H01L 27/10826 ・・・・・・・{the transistor being of the FinFET type}

H01L 27/10829 ・・・・・・・{the capacitor being in a substrate trench}

H01L 27/10832 ・・・・・・・・{the capacitor extending under or around transfer transistor area}

H01L 27/10835 ・・・・・・・・{having storage electrode extension stacked over transistor}

H01L 27/10838 ・・・・・・・{the capacitor and the transistor being in one trench}

H01L 27/10841 ・・・・・・・・{the transistor being vertical}

H01L 27/10844 ・・・・・・{Multistep manufacturing methods}

H01L 27/10847 ・・・・・・・{for structures comprising one transistor one-capacitor memory cells}

H01L 27/1085 ・・・・・・・・{with at least one step of making the capacitor or connections thereto (making a capacitor for integrated circuits H01L 28/40, H01L 29/66181)}

H01L 27/10852 ・・・・・・・・・{the capacitor extending over the access transistor}

H01L 27/10855 ・・・・・・・・・・{with at least one step of making a connection between transistor and capacitor, e.g. plug}

H01L 27/10858 ・・・・・・・・・{the capacitor extending under the access transistor area}

H01L 27/10861 ・・・・・・・・・{the capacitor being in a substrate trench}

H01L 27/10864 ・・・・・・・・・・{in combination with a vertical transistor}

H01L 27/10867 ・・・・・・・・・・{with at least one step of making a connection between transistor and capacitor, e.g. buried strap}

H01L 27/1087 ・・・・・・・・・・{with at least one step of making the trench}

H01L 27/10873 ・・・・・・・・{with at least one step of making the transistor (making the transistor per se H01L 29/66409)}

H01L 27/10876 ・・・・・・・・・{the transistor having a trench structure in the substrate (vertical transistor in combination with a capacitor formed in a substrate trench H01L 27/10864)}

H01L 27/10879 ・・・・・・・・・{the transistor being of the FinFET type}

H01L 27/10882 ・・・・・・・・{with at least one step of making a data line}

H01L 27/10885 ・・・・・・・・・{with at least one step of making a bit line}

H01L 27/10888 ・・・・・・・・・{with at least one step of making a bit line contact}

H01L 27/10891 ・・・・・・・・・{with at least one step of making a word line}

H01L 27/10894 ・・・・・・・{with simultaneous manufacture of periphery and memory cells}

H01L 27/10897 ・・・・・・{Peripheral structures}

H01L 27/11 ・・・・・Static random access memory structures {and multistep manufacturing processes therefor (circuits G11C 11/40)}

H01L 27/1104 ・・・・・・{the load element being a MOSFET transistor}

H01L 27/1108 ・・・・・・・{the load element being a thin film transistor}

H01L 27/1112 ・・・・・・{the load element being a resistor (resistors for integrated circuits H01L 28/20, H01L 29/8605)}

H01L 27/1116 ・・・・・・{Peripheral circuit region}

H01L 27/112 ・・・・・Read-only memory structures {[ROM} and multistep manufacturing processes therefor]

H01L 27/11206 ・・・・・・{Programmable ROM [PROM], e.g. memory cells comprising a transistor and a fuse or an antifuse}

H01L 27/11213 ・・・・・・{ROM only}

H01L 27/1122 ・・・・・・・{with source and drain on the same level, e.g. lateral transistors}

H01L 27/11226 ・・・・・・・・{Source or drain contact programmed}

H01L 27/11233 ・・・・・・・・{Gate programmed, e.g. different gate material or no gate}

H01L 27/1124 ・・・・・・・・・{Gate contact programmed}

H01L 27/11246 ・・・・・・・・・{Gate dielectric programmed, e.g. different thickness}

H01L 27/11253 ・・・・・・・・{Doping programmed, e.g. mask ROM}

H01L 27/1126 ・・・・・・・・・{Entire channel doping programmed}

H01L 27/11266 ・・・・・・・・・{Source or drain doping programmed}

H01L 27/11273 ・・・・・・・{with source and drain on different levels, e.g. vertical channel}

H01L 27/1128 ・・・・・・・{with transistors on different levels, e.g. 3D ROM}

H01L 27/11286 ・・・・・・{Peripheral circuit regions}

H01L 27/11293 ・・・・・・・{of memory structures of the ROM-only type}

H01L 27/115 ・・・・・・Electrically programmable read-only memories {and multistep manufacturing processes therefor}

H01L 27/11502 ・・・・・・・{with ferroelectric memory capacitor}

H01L 27/11504 ・・・・・・・・{Top-view layout}

H01L 27/11507 ・・・・・・・・{Memory core region}

H01L 27/11509 ・・・・・・・・{Peripheral circuit region}

H01L 27/11512 ・・・・・・・・{Boundary region between core and peripheral circuit region}

H01L 27/11514 ・・・・・・・・{Three-dimensional arrangements, e.g. cells on different height levels}

H01L 27/11517 ・・・・・・・{with floating gate}

H01L 27/11519 ・・・・・・・・{Top-view layout}

H01L 27/11521 ・・・・・・・・{Memory core region core region (three-dimensional arrangements H01L 27/11551)}

H01L 27/11524 ・・・・・・・・・{with at least one cell select transistor, e.g. NAND}

H01L 27/11526 ・・・・・・・・{Peripheral circuit region}

H01L 27/11529 ・・・・・・・・・{of memory regions comprising at least one cell select transistor, e.g. NAND}

H01L 27/11531 ・・・・・・・・・{Simultaneous fabrication of periphery and memory cells}

H01L 27/11534 ・・・・・・・・・・{including only one type of peripheral transistor}

H01L 27/11536 ・・・・・・・・・・・{Control gate layer used for the peripheral transistor}

H01L 27/11539 ・・・・・・・・・・・{Intergate dielectric layer used for the peripheral transistor}

H01L 27/11541 ・・・・・・・・・・・{Floating-gate layer used for the peripheral transistor}

H01L 27/11543 ・・・・・・・・・・・{Tunnel dielectric layer used for the peripheral transistor}

H01L 27/11546 ・・・・・・・・・・{including different types of peripheral transistors}

H01L 27/11548 ・・・・・・・・{Boundary region between core and peripheral circuit regions}

H01L 27/11551 ・・・・・・・・{Three-dimensional arrangements, e.g. cells on different height levels}

H01L 27/11553 ・・・・・・・・・{with source and drain on different levels, e.g. with sloping channel}

H01L 27/11556 ・・・・・・・・・・{the channel comprising at least one vertical portion, e.g. U-shaped channel}

　　WARNING - not complete pending reorganisation, see provisionally also H01L 27/11551

H01L 27/11558 ・・・・・・・・{the control gate being a doped region, e.g. single-poly memory cells}

H01L 27/1156 ・・・・・・・・N: the floating gate being an electrode shared by a plurality of components]

H01L 27/11563 ・・・・・・・{with charge trapping gate insulator, e.g. MNOS, NROM}

H01L 27/11565 ・・・・・・・・{Top-view layout}

H01L 27/11568 ・・・・・・・・{Memory core region (three-dimensional arrangements H01L 27/11578)}

H01L 27/1157 ・・・・・・・・・{with at least one cell select transistor, e.g. NAND}

H01L 27/11573 ・・・・・・・・{Peripheral circuit region}

H01L 27/11575 ・・・・・・・・{Boundary region between core and peripheral circuit region}

H01L 27/11578 ・・・・・・・・{Three-dimensional arrangements, e.g. cells on different height levels}

H01L 27/1158 ・・・・・・・・・{with source and drain on different levels, e.g. with sloping channel}

H01L 27/11582 ・・・・・・・・・・{the channel comprising at least one vertical portion, e.g. U-shaped channel}

H01L 27/11585 ・・・・・・・{with gate electrode comprising a layer which is used for its ferroelectric memory properties, e.g. MFS (metal-ferroelectric-semiconductor), MFMIS (metal-ferroelectric-metal-insulator-semiconductor)}

H01L 27/11587 ・・・・・・・・{Top-view layout}

H01L 27/1159 ・・・・・・・・{Memory core region}

H01L 27/11592 ・・・・・・・・{Peripheral circuit region}

H01L 27/11595 ・・・・・・・・{Boundary region between core and peripheral circuit region}

H01L 27/11597 ・・・・・・・・{Three-dimensional arrangements, e.g. cells on different height levels}

H01L 27/118 ・・・・Masterslice integrated circuits

H01L 27/11801 ・・・・・{using bipolar technology}

H01L 27/11803 ・・・・・{using field effect technology}

H01L 27/11807 ・・・・・・{CMOS gate arrays}

H01L 27/11896 ・・・・・{using combined field effect/bipolar technology}

H01L 27/11898 ・・・・・{Input and output buffer/driver structures}

H01L 27/12 ・・the substrate being other than a semiconductor body, e.g. an insulating body

H01L 27/1203 ・・・{the substrate comprising an insulating body on a semiconductor body, e.g. SOI (three-dimensional layout H01L 27/0688)}

H01L 27/1207 ・・・・{combined with devices in contact with the semiconductor body, i.e. bulk/SOI hybrid circuits}

H01L 27/1211 ・・・・{combined with field-effect transistors with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET}

H01L 27/1214 ・・・{comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs}

H01L 27/1218 ・・・・{with a particular composition or structure of the substrate}

H01L 27/1222 ・・・・{with a particular composition, shape or crystalline structure of the active layer}

H01L 27/1225 ・・・・・{with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO}

H01L 27/1229 ・・・・・{with different crystal properties within a device or between different devices}

H01L 27/1233 ・・・・・{with different thicknesses of the active layer in different devices}

H01L 27/1237 ・・・・{with a different composition, shape, layout or thickness of the gate insulator in different devices}

H01L 27/124 ・・・・{with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits (wiring structures per se H01L 23/52)}

H01L 27/1244 ・・・・・{for preventing breakage, peeling or short circuiting}

H01L 27/1248 ・・・・{with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement}

H01L 27/1251 ・・・・{comprising TFTs having a different architecture, e.g. top- and bottom gate TFTs}

H01L 27/1255 ・・・・{integrated with passive devices, e.g. auxiliary capacitors}

H01L 27/1259 ・・・・{Multistep manufacturing methods}

H01L 27/1262 ・・・・・{with a particular formation, treatment or coating of the substrate}

H01L 27/1266 ・・・・・・{the substrate on which the devices are formed not being the final device substrate, e.g. using a temporary substrate}

H01L 27/127 ・・・・・{with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement}

H01L 27/1274 ・・・・・・{using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor (crystallisation per se H01L 21/02667)}

H01L 27/1277 ・・・・・・・{using a crystallisation promoting species, e.g. local introduction of Ni catalyst}

H01L 27/1281 ・・・・・・・{by using structural features to control crystal growth, e.g. placement of grain filters}

H01L 27/1285 ・・・・・・・{using control of the annealing or irradiation parameters, e.g. using different scanning direction or intensity for different transistors}

H01L 27/1288 ・・・・・{employing particular masking sequences or specially adapted masks, e.g. half-tone mask}

H01L 27/1292 ・・・・・{using liquid deposition, e.g. printing}

H01L 27/1296 ・・・・・{adapted to increase the uniformity of device parameters}

H01L 27/13 ・・・combined with thin-film or thick-film passive components {(passive two-terminal components without a potential-jump or surface barrier for integrated circuits, details thereof and multistep manufacturing processes therefor H01L 28/00)}

H01L 27/14 ・including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation (radiation-sensitive components structurally associated with one or more electric light sources only H01L 31/14; couplings of light guides with optoelectronic elements G02B 6/42)

H01L 27/142 ・・Energy conversion devices

H01L 27/1421 ・・・{comprising bypass diodes integrated or directly associated with the device, e.g. bypass diode integrated or formed in or on the same substrate as the solar cell}

H01L 27/1422 ・・・{in a repetitive configuration, e.g. planar multijunction solar cells}

H01L 27/1423 ・・・・{comprising only thin film solar cells deposited on a substrate, e.g. thin film (a-Si, CIS, CdTe) solar modules}

H01L 27/1425 ・・・・・{characterized by special patterning methods to connect the cells in a module, e.g. laser cutting of the conductive and/or active layers}

H01L 27/1426 ・・・・・{comprising particular structures for the electrical interconnection of adjacent solar cells in the module}

H01L 27/1427 ・・・・・{comprising specific means for obtaining a partial light transmission of the module, e.g. partially transparent thin film solar modules for windows}

H01L 27/1428 ・・・・{comprising multiple vertical junction or V-groove junction solar cells formed in a semiconductor substrate}

H01L 27/144 ・・Devices controlled by radiation

H01L 27/1443 ・・・{with at least one potential jump or surface barrier}

H01L 27/1446 ・・・{in a repetitive configuration}

H01L 27/146 ・・・Imager structures

H01L 27/14601 ・・・・{Structural or functional details thereof}

H01L 27/14603 ・・・・・{Special geometry or disposition of pixel-elements, address-lines or gate-electrodes}

H01L 27/14605 ・・・・・・{Structural or functional details relating to the position of the pixel elements, e.g. smaller pixel elements in the center of the imager compared to pixel elements at the periphery}

H01L 27/14607 ・・・・・・{Geometry of the photosensitive area}

H01L 27/14609 ・・・・・{Pixel-elements with integrated switching, control, storage or amplification elements (scanning details of imagers H04N 3/15; circuitry of imagers H04N 5/369)}

H01L 27/1461 ・・・・・・{characterised by the photosensitive area}

H01L 27/14612 ・・・・・・{involving a transistor}

H01L 27/14614 ・・・・・・・{having a special gate structure}

H01L 27/14616 ・・・・・・・{characterised by the channel of the transistor, e.g. channel having a doping gradient}

H01L 27/14618 ・・・・・{Containers}

H01L 27/1462 ・・・・・{Coatings}

H01L 27/14621 ・・・・・・{Colour filter arrangements}

H01L 27/14623 ・・・・・・{Optical shielding}

H01L 27/14625 ・・・・・{Optical elements or arrangements associated with the device}

H01L 27/14627 ・・・・・・{Microlenses}

H01L 27/14629 ・・・・・・{Reflectors}

H01L 27/1463 ・・・・・{Pixel isolation structures}

H01L 27/14632 ・・・・・{Wafer-level processed structures}

H01L 27/14634 ・・・・・{Assemblies, i.e. Hybrid structures}

H01L 27/14636 ・・・・・{Interconnect structures}

H01L 27/14638 ・・・・・{Structures specially adapted for transferring the charges across the imager perpendicular to the imaging plane}

H01L 27/1464 ・・・・・{Back illuminated imager structures}

H01L 27/14641 ・・・・・{Electronic components shared by two or more pixel-elements, e.g. one amplifier shared by two pixel elements}

H01L 27/14643 ・・・・{Photodiode arrays; MOS imagers}

H01L 27/14645 ・・・・・{Colour imagers}

H01L 27/14647 ・・・・・・{Multicolour imagers having a stacked pixel-element structure, e.g. npn, npnpn or MQW elements}

H01L 27/14649 ・・・・・{Infra-red imagers}

H01L 27/1465 ・・・・・・{of the hybrid type}

H01L 27/14652 ・・・・・・{Multispectral infra-red imagers, having a stacked pixel-element structure, e.g. npn, npnpn or MQW structures}

H01L 27/14654 ・・・・・{Blooming suppression}

H01L 27/14656 ・・・・・・{Overflow drain structures}

H01L 27/14658 ・・・・・{X-ray, gamma-ray or corpuscular radiation imagers (measuring X-, gamma- or corpuscular radiation G01T 1/00)}

H01L 27/14659 ・・・・・・{Direct radiation imagers structures}

H01L 27/14661 ・・・・・・{of the hybrid type}

H01L 27/14663 ・・・・・・{Indirect radiation imagers e.g. using luminescent members}

H01L 27/14665 ・・・・{Imagers using a photoconductor layer}

H01L 27/14667 ・・・・・{Colour imagers}

H01L 27/14669 ・・・・・{Infra-red imagers}

H01L 27/1467 ・・・・・・{of the hybrid type}

H01L 27/14672 ・・・・・{Blooming suppression}

H01L 27/14674 ・・・・・・{Overflow drain structures}

H01L 27/14676 ・・・・・{X-ray, gamma-ray or corpuscular radiation imagers (measuring X-, gamma- or corpuscular radiation G01T 1/00)}

H01L 27/14678 ・・・・{Contact-type imagers}

H01L 27/14679 ・・・・{Junction field effect transistor (JFET) imagers; static induction transistor (SIT) imagers}

H01L 27/14681 ・・・・{Bipolar transistor imagers}

H01L 27/14683 ・・・・{Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof (not peculiar thereto H01L 21/00)}

H01L 27/14685 ・・・・・{Process for coatings or optical elements}

H01L 27/14687 ・・・・・{Wafer level processing}

H01L 27/14689 ・・・・・{MOS based technologies}

H01L 27/1469 ・・・・・{Assemblies, i.e. hybrid integration}

H01L 27/14692 ・・・・・{Thin film technologies, e.g. amorphous, poly, micro or nanocrystalline silicon}

H01L 27/14694 ・・・・・{The active layers comprising only AIIIBV compounds, e.g. GaAs, InP}

H01L 27/14696 ・・・・・{The active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe}

H01L 27/14698 ・・・・・{Post-treatment for the devices, e.g. annealing, impurity-gettering, shor-circuit elimination, recrystallisation}

H01L 27/148 ・・・・Charge coupled imagers {(individual charge coupled devices H01L 29/765)}

H01L 27/14806 ・・・・・{Structural or functional details thereof}

H01L 27/14812 ・・・・・・{Special geometry or disposition of pixel-elements, address lines or gate-electrodes}

H01L 27/14818 ・・・・・・・{Optical shielding}

H01L 27/14825 ・・・・・{Linear CCD imagers}

H01L 27/14831 ・・・・・{Area CCD imagers}

H01L 27/14837 ・・・・・・{Frame-interline transfer}

H01L 27/14843 ・・・・・・{Interline transfer}

H01L 27/1485 ・・・・・・{Frame transfer}

H01L 27/14856 ・・・・・・{Time-delay and integration}

H01L 27/14862 ・・・・・{CID imagers}

H01L 27/14868 ・・・・・{CCD or CID colour imagers}

H01L 27/14875 ・・・・・{Infra-red CCD or CID imagers}

H01L 27/14881 ・・・・・・{of the hybrid type}

H01L 27/14887 ・・・・・{Blooming suppression}

H01L 27/14893 ・・・・・{comprising a photoconductive layer deposited on the CCD structure}

H01L 27/15 ・including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission {(monolithically integrated components including semiconductor laser components H01S 5/026)}

H01L 27/153 ・・{in a repetitive configuration, e.g. LED bars}

H01L 27/156 ・・・{two-dimensional arrays}

H01L 27/16 ・including thermoelectric components with or without a junction of dissimilar materials; including thermomagnetic components (using the Peltier effect only for cooling of semiconductor or other solid state devices H01L 23/38)

H01L 27/18 ・including components exhibiting superconductivity

H01L 27/20 ・including piezo-electric components; including electrostrictive components; including magnetostrictive components

H01L 27/22 ・including components using galvano-magnetic effects, e.g. Hall effects; using similar magnetic field effects

H01L 27/222 ・・{Magnetic non-volatile memory structures, e.g. MRAM}

H01L 27/224 ・・・{comprising two-terminal components, e.g. diodes, MIM elements}

H01L 27/226 ・・・{comprising multi-terminal components, e.g. transistors}

H01L 27/228 ・・・・{of the field-effect transistor type}

H01L 27/24 ・including solid state components for rectifying, amplifying or switching without a potential-jump barrier or surface barrier, {e.g. resistance switching non-volatile memory structures}

H01L 27/2409 ・・{comprising two-terminal selection components, e.g. diodes}

H01L 27/2418 ・・・{of the metal-insulator-metal type}

H01L 27/2427 ・・・{of the Ovonic threshold switching type}

H01L 27/2436 ・・{comprising multi-terminal selection components, e.g. transistors}

H01L 27/2445 ・・・{of the bipolar type}

H01L 27/2454 ・・・{of the vertical channel field-effect transistor type}

H01L 27/2463 ・・{Arrangements comprising multiple bistable or multistable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays, details of the horizontal layout}

H01L 27/2472 ・・・{the switching components having a common active material layer}

H01L 27/2481 ・・・{arranged in a direction perpendicular to the substrate, e.g. 3D cell arrays, details of the vertical layout}

H01L 27/249 ・・・・{the switching components being connected to a common vertical conductor}

H01L 27/26 ・including bulk negative resistance effect components

H01L 27/265 ・・{Gunn effect devices}

H01L 27/28 ・including components using organic materials as the active part, or using a combination of organic materials with other materials as the active part

H01L 27/281 ・・{Integrated circuits having a three-dimensional layout}

H01L 27/283 ・・{comprising components of the field-effect type}

H01L 27/285 ・・{Integrated circuits with a common active layer, e.g. cross point devices}

H01L 27/286 ・・{with an active region comprising an inorganic semiconductor}

H01L 27/288 ・・{Combination of organic light sensitive components with organic light emitting components, e.g. optocoupler}

H01L 27/30 ・・with components specially adapted for sensing infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation; with components specially adapted for either the conversion of the energy of such radiation into elecrical energy or for the control of electrical energy by such radiation {(combination of organic light sensitive components with organic light emitting components, e.g. optocoupler H01L 27/288)}

H01L 27/301 ・・・{Energy conversion devices}

H01L 27/302 ・・・・{comprising multiple junctions, e.g. tandem cells}

H01L 27/304 ・・・・{in form of a fiber or a tube, e.g. photovoltaic fibers}

H01L 27/305 ・・・{Devices controlled by radiation}

H01L 27/307 ・・・・{Imager structures}

H01L 27/308 ・・・・{Devices specially adapted for detecting X-ray radiation (measuring X-radiation G01T 1/00)}

H01L 27/32 ・・with components specially adapted for light emission, e.g. flat-panel displays using organic light-emitting diodes (OLED) {combination of organic light sensitive components with organic light emitting components, e.g. optocoupler H01L 27/288}

H01L 27/3202 ・・・{OLEDs electrically connected in parallel}

H01L 27/3204 ・・・{OLEDs electrically connected in series}

H01L 27/3206 ・・・{Multi-colour light emission}

H01L 27/3209 ・・・・{using stacked OLED}

H01L 27/3211 ・・・・{using RGB sub-pixels}

H01L 27/3213 ・・・・・{using more than three sub-pixels, e.g. RGBW}

H01L 27/3216 ・・・・・{the areas of RGB sub-pixels being different}

H01L 27/3218 ・・・・・{characterised by the geometrical arrangement of the RGB sub-pixels}

H01L 27/322 ・・・・{using colour filters or colour changing media (CCM)}

H01L 27/3223 ・・・{combined with dummy elements, i.e. non-functional features}

H01L 27/3225 ・・・{OLED integrated with another component (H01L 27/3223 takes precedence)}

H01L 27/3227 ・・・・{the other component being a light sensitive element, e.g. inorganic solar cell, inorganic photodiode (H01L 27/288 takes precedence)}

H01L 27/323 ・・・・{the other component being a touch screen}

H01L 27/3232 ・・・・{the other component being a light modulating element, e.g. electrochromic element, photochromic element, liquid crystal element}

H01L 27/3234 ・・・・{the other component being an imager structure (H01L 27/146 takes precedence)}

H01L 27/3237 ・・・{Displays not provided for in group H01L 27/3241 and subgroups, e.g. segment-type displays}

H01L 27/3239 ・・・・{Light emitting logos}

H01L 27/3241 ・・・{Matrix-type displays}

H01L 27/3244 ・・・・{Active matrix displays}

H01L 27/3246 ・・・・・{Banks, i.e. pixel defining layers}

H01L 27/3248 ・・・・・{Connection of the pixel electrode to the TFT}

H01L 27/3251 ・・・・・{Double substrate, i.e. with OLED and TFT on different substrates}

H01L 27/3253 ・・・・・・{Electrical connection of the two substrates}

H01L 27/3255 ・・・・・{Chiplets}

H01L 27/3258 ・・・・・{Insulating layers formed between TFT elements and OLED elements}

H01L 27/326 ・・・・・{special geometry or disposition of pixel-elements}

H01L 27/3262 ・・・・・・{of TFT}

H01L 27/3265 ・・・・・・{of capacitor}

H01L 27/3267 ・・・・・{Dual display, i.e. having two independent displays}

H01L 27/3269 ・・・・・{Including photosensors to control luminance}

H01L 27/3272 ・・・・・{Shielding, e.g. of TFT}

H01L 27/3274 ・・・・・{including organic thin film transistors [OTFT}]

H01L 27/3276 ・・・・・{Wiring lines}

H01L 27/3279 ・・・・・・{comprising structures specially adapted for lowering the resistance}

H01L 27/3281 ・・・・{Passive matrix displays}

H01L 27/3283 ・・・・・{Including banks or shadow masks}

H01L 27/3286 ・・・・・[Dual display, i.e. having two independent displays]

H01L 27/3288 ・・・・・{Wiring lines}

H01L 27/329 ・・・・・・{comprising structures specially adapted for lowering the resistance}

H01L 27/3293 ・・・・{Tiled displays}

H01L 27/3295 ・・・・{including banks or shadow masks}

H01L 27/3297 ・・・・{Wiring lines, e.g. power supply lines}

H01L 28/00 {Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor (testing or measuring during manufacture H01L 22/00; integration methods H01L 21/70; integrated circuits H01L 27/00; two-terminal components with a potential-jump or surface barrier H01L 29/00; resistors in general H01C; inductors in general H01F; capacitors in general H01G)}

H01L 28/10 ・{Inductors}

H01L 28/20 ・{Resistors}

H01L 28/22 ・・{with an active material comprising carbon, e.g. diamond or diamond-like carbon [DLC}]

H01L 28/24 ・・{with an active material comprising a refractory, transition or noble metal, metal compound or metal alloy, e.g. silicides, oxides, nitrides}

H01L 28/26 ・・{with an active material comprising an organic conducting material, e.g. conducting polymers}

H01L 28/40 ・{Capacitors}

H01L 28/55 ・・{with a dielectric comprising a perovskite structure material}

H01L 28/56 ・・・{the dielectric comprising two or more layers, e.g. comprising buffer layers, seed layers, gradient layers}

H01L 28/57 ・・・{comprising a barrier layer to prevent diffusion of hydrogen or oxygen}

H01L 28/60 ・・{Electrodes}

H01L 28/65 ・・・{comprising a noble metal or a noble metal oxide, e.g. platinum (Pt), ruthenium (Ru), ruthenium dioxide (RuO2), iridium (Ir), iridium dioxide (IrO2)}

H01L 28/75 ・・・{comprising two or more layers, e.g. comprising a barrier layer and a metal layer}

H01L 28/82 ・・・{with an enlarged surface, e.g. formed by texturisation}

H01L 28/84 ・・・・{being a rough surface, e.g. using hemispherical grains}

H01L 28/86 ・・・・{having horizontal extensions}

H01L 28/87 ・・・・・{made by depositing layers, e.g. by depositing alternating conductive and insulating layers}

H01L 28/88 ・・・・・{made by patterning layers, e.g. by etching conductive layers}

H01L 28/90 ・・・・{having vertical extensions}

H01L 28/91 ・・・・・{made by depositing layers, e.g. by depositing alternating conductive and insulating layers}

H01L 28/92 ・・・・・{made by patterning layers, e.g. by etching conductive layers}

H01L 29/00 Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; {Multistep manufacturing processes therefor}(H01L 31/00-H01L 47/00, H01L 51/05 take precedence; processes or apparatus adapted for the manufacture or treatment thereof or of parts thereof H01L 21/00; details other than of semiconductor bodies or of electrodes thereof H01L 23/00; devices consisting of a plurality of solid state components formed in or on a common substrate H01L 27/00; {passive two-terminal components without a potential-jump or surface barrier for integrated circuits, details thereof and multistep manufacturing processes therefor H01L 28/00;} resistors in general H01C; capacitors in general H01G, {e.g. ceramic barrier-layer capacitors H01G 4/1272})

H01L 29/02 ・Semiconductor bodies; {Multistep manufacturing processes therefor}

H01L 29/04 ・・characterised by their crystalline structure, e.g. polycrystalline, cubic, particular orientation of crystalline planes (imperfections H01L 29/30)

H01L 29/045 ・・・{by their particular orientation of crystalline planes}

H01L 29/06 ・・characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions; {characterised by the concentration or distribution of impurities within semiconductor regions}

H01L 29/0603 ・・・{characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions (isolation regions between components H01L 21/76; design considerations for integrated circuits H01L 27/00; geometrical design considerations for devices H01L 29/0657)}

H01L 29/0607 ・・・・{for preventing surface leakage or controlling electric field concentration}

H01L 29/0611 ・・・・・{for increasing or controlling the breakdown voltage of reverse biased devices (H01L 29/0661 takes precedence)}

H01L 29/0615 ・・・・・・{by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension (JTE) (LDD or drain offset regions H01L 29/7833)}

H01L 29/0619 ・・・・・・・{with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction}

H01L 29/0623 ・・・・・・・・{Buried supplementary region, e.g. buried guard ring (multi-RESURF H01L 29/0634)}

H01L 29/0626 ・・・・・・・{with a localised breakdown region, e.g. built-in avalanching region (in self-protected thyristors H01L 29/7424)}

H01L 29/063 ・・・・・・・{Reduced surface field (RESURF) pn-junction structures}

H01L 29/0634 ・・・・・・・・{Multiple reduced surface field (multi-RESURF) structures, e.g. double RESURF, charge compensation, cool, superjunction (SJ), 3D-RESURF, composite buffer (CB) structures}

H01L 29/0638 ・・・・・{for preventing surface leakage due to surface inversion layer, e.g. with channel stopper (channel stoppers in combination with isolation region for integrated circuits H01L 21/762)}

H01L 29/0642 ・・・・{Isolation within the component, i.e. internal isolation}

H01L 29/0646 ・・・・・{PN junctions}

H01L 29/0649 ・・・・・{Dielectric regions, e.g. SiO2 regions, air gaps}

H01L 29/0653 ・・・・・・{adjoining the input or output region of a field-effect device, e.g. the source or drain region}

H01L 29/0657 ・・・{characterised by the shape of the body}

H01L 29/0661 ・・・・{specially adapted for altering the breakdown voltage by removing semiconductor material at, or in the neighbourhood of, a reverse biased junction, e.g. by bevelling, moat etching, depletion etching}

H01L 29/0665 ・・・・{the shape of the body defining a nanostructure (nanotechnology per se B82B)}

H01L 29/0669 ・・・・・{Nanowires or nanotubes (carbon nanotubes as material of solid-state device active part H01L 51/0048)}

H01L 29/0673 ・・・・・・{oriented parallel to a substrate}

H01L 29/0676 ・・・・・・{oriented perpendicular or at an angle to a substrate}

H01L 29/068 ・・・・・・{comprising a junction}

H01L 29/0684 ・・・{characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions}

H01L 29/0688 ・・・・{characterised by the particular shape of a junction between semiconductor regions}

H01L 29/0692 ・・・・{Surface layout}

H01L 29/0696 ・・・・・{of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs}

H01L 29/08 ・・・with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes

H01L 29/0804 ・・・・{Emitter regions of bipolar transistors}

H01L 29/0808 ・・・・・{of lateral transistors}

H01L 29/0813 ・・・・・{Non-interconnected multi-emitter structures}

H01L 29/0817 ・・・・・{of heterojunction bipolar transistors (H01L 29/7375 takes precedence)}

H01L 29/0821 ・・・・{Collector regions of bipolar transistors}

H01L 29/0826 ・・・・・{Pedestal collectors}

H01L 29/083 ・・・・{Anode or cathode regions of thyristors or gated bipolar-mode devices}

H01L 29/0834 ・・・・・{Anode regions of thyristors or gated bipolar-mode devices, e.g. supplementary regions surrounding anode regions}

H01L 29/0839 ・・・・・{Cathode regions of thyristors}

H01L 29/0843 ・・・・{Source or drain regions of field-effect devices}

H01L 29/0847 ・・・・・{of field-effect transistors with insulated gate (H01L 29/0653 takes precedence; with a passive supplementary region between source or drain and substrate related to punch-through, capacity or isolation phenomena H01L 29/1079; with LDD or DDD structure H01L 29/7833; for thin film transistors H01L 29/78618)}

H01L 29/0852 ・・・・・・{of DMOS transistors}{WARNING: This group and subgroups thereof are not complete, see provisionally also H01L 29/0847 and H01L 29/7801 and subgroups thereof}

H01L 29/0856 ・・・・・・・{Source regions}

H01L 29/086 ・・・・・・・・{Impurity concentration or distribution}

H01L 29/0865 ・・・・・・・・{Disposition}

H01L 29/0869 ・・・・・・・・{Shape (cell layout H01L 29/0696)}

H01L 29/0873 ・・・・・・・{Drain regions}

H01L 29/0878 ・・・・・・・・{Impurity concentration or distribution}

H01L 29/0882 ・・・・・・・・{Disposition}

H01L 29/0886 ・・・・・・・・{Shape}

H01L 29/0891 ・・・・・{of field-effect transistors with Schottky gate}

H01L 29/0895 ・・・・{Tunnel injectors}

H01L 29/10 ・・・with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes

H01L 29/1004 ・・・・{Base region of bipolar transistors}

H01L 29/1008 ・・・・・{of lateral transistors}

H01L 29/1012 ・・・・{Base regions of thyristors (H01L 29/083 takes precedence)}

H01L 29/1016 ・・・・・{Anode base regions of thyristors}

H01L 29/102 ・・・・・{Cathode base regions of thyristors}

H01L 29/1025 ・・・・{Channel region of field-effect devices}

H01L 29/1029 ・・・・・{of field-effect transistors}

H01L 29/1033 ・・・・・・{with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure (with channel and gate aligned in the lengthwise direction H01L 29/42376; with buried channel H01L 29/7838)}

H01L 29/1037 ・・・・・・・{and non-planar channel (resulting from the gate electrode disposition, e.g. within a trench, H01L 29/42356)}

H01L 29/1041 ・・・・・・・{with a non-uniform doping structure in the channel region surface}

H01L 29/1045 ・・・・・・・・{the doping structure being parallel to the channel length, e.g. DMOS like}

H01L 29/105 ・・・・・・・{with vertical doping variation (H01L 29/7827 takes precedence)}

H01L 29/1054 ・・・・・・・{with a variation of the composition, e.g. channel with strained layer for increasing the mobility}

H01L 29/1058 ・・・・・・{with PN junction gate}

H01L 29/1062 ・・・・・{of charge coupled devices}

H01L 29/1066 ・・・・{Gate region of field-effect devices with PN junction gate}

H01L 29/107 ・・・・{Substrate region of field-effect devices}

H01L 29/1075 ・・・・・{of field-effect transistors}

H01L 29/1079 ・・・・・・{with insulated gate}

H01L 29/1083 ・・・・・・・{with an inactive supplementary region, e.g. for preventing punch-through, improving capacity effect or leakage current}

H01L 29/1087 ・・・・・・・{characterised by the contact structure of the substrate region, e.g. for controlling or preventing bipolar effect}

H01L 29/1091 ・・・・・{of charge coupled devices}

H01L 29/1095 ・・・・{Body region, i.e. base region, of DMOS transistors or IGBTs (cell layout H01L 29/0696)}

H01L 29/12 ・・characterised by the materials of which they are formed

H01L 29/122 ・・・{Single quantum well structures (single heterojunctions, couples of materials H01L 29/165, H01L 29/205, H01L 29/225, H01L 29/267)}

H01L 29/125 ・・・・{Quantum wire structures}

H01L 29/127 ・・・・{Quantum box structures}

H01L 29/15 ・・・Structures with periodic or quasi periodic potential variation, e.g. multiple quantum wells, superlattices (such structures applied for the control of light G02F 1/017, applied in semiconductor lasers H01S 5/34)

H01L 29/152 ・・・・・{with quantum effects only in vertical direction, i.e. layered structures with quantum effects solely resulting from vertical potential variation}

H01L 29/154 ・・・・・・{comprising at least one long range structurally disordered material, e.g. one-dimensional vertical amorphous superlattices}

H01L 29/155 ・・・・・・{Comprising only semiconductor materials (H01L 29/154 takes precedence)}

H01L 29/157 ・・・・{Doping structures, e.g. doping superlattices, nipi superlattices (delta doping in general H01L 29/365)}

H01L 29/158 ・・・・{Structures without potential periodicity in a direction perpendicular to a major surface of the substrate, i.e. vertical direction, e.g. lateral superlattices, lateral surface superlattices (LSS)}

H01L 29/16 ・・・including, apart from doping materials or other impurities, only elements of the fourth group of the Periodic System in uncombined form {(including SiC H01L 29/24)}

H01L 29/1602 ・・・・[N : Diamond]

H01L 29/1604 ・・・・{Amorphous materials}

H01L 29/1606 ・・・・{Graphene}

H01L 29/1608 ・・・・{Silicon carbide}

H01L 29/161 ・・・・including two or more of the elements provided for in group H01L 29/16, {e.g. alloys (H01L 29/1604 takes precedence)}

H01L 29/165 ・・・・・in different semiconductor regions, {e.g. heterojunctions}

H01L 29/167 ・・・・further characterised by the doping material {(H01L 29/1604 takes precedence)}

H01L 29/18 ・・・Selenium or tellurium only, apart from doping materials or other impurities

H01L 29/185 ・・・・{Amorphous materials}

H01L 29/20 ・・・including, apart from doping materials or other impurities, only AIIIBV compounds

H01L 29/2003 ・・・・{Nitride compounds}

H01L 29/2006 ・・・・{Amorphous materials}

H01L 29/201 ・・・・including two or more compounds, {e.g. alloys (H01L 29/2006 takes precedence)}

H01L 29/205 ・・・・・in different semiconductor regions, {e.g. heterojunctions}

H01L 29/207 ・・・・further characterised by the doping material {(H01L 29/2006 takes precedence)}

H01L 29/22 ・・・including, apart from doping materials or other impurities, only AIIBVI compounds

H01L 29/2203 ・・・・{Cd X compounds being one element of the 6th group of the Periodic System (H01L 29/2206 takes precedence)}

H01L 29/2206 ・・・・{Amorphous materials}

H01L 29/221 ・・・・including two or more compounds, {e.g. alloys (H01L 29/2206 takes precedence)}

H01L 29/225 ・・・・・in different semiconductor regions, {e.g. heterojunctions}

H01L 29/227 ・・・・further characterised by the doping material {(H01L 29/2206 takes precedence)}

H01L 29/24 ・・・including, apart from doping materials or other impurities, only semiconductor materials not provided for in groups H01L 29/16, H01L 29/18, H01L 29/20, H01L 29/22(including organic materials H01L 51/00)

H01L 29/242 ・・・・{AIBVI or AIBVII compounds, e.g. Cu2O, Cu I (H01L 29/247 takes precedence)}

H01L 29/245 ・・・・{Pb compounds, e.g. PbO (H01L 29/247 takes precedence)}

H01L 29/247 ・・・・{Amorphous materials}

H01L 29/26 ・・・including, apart from doping materials or other impurities, elements provided for in two or more of the groups H01L 29/16, H01L 29/18, H01L 29/20, H01L 29/22, H01L 29/24, {e.g. alloys}

H01L 29/263 ・・・・{Amorphous materials}

H01L 29/267 ・・・・in different semiconductor regions, {e.g. heterojunctions (H01L 29/263 takes precedence)}

H01L 29/30 ・・characterised by physical imperfections; having polished or roughened surface

H01L 29/32 ・・・the imperfections being within the semiconductor body

H01L 29/34 ・・・the imperfections being on the surface

H01L 29/36 ・・characterised by the concentration or distribution of impurities {in the bulk material (within semiconductor regions H01L 29/06)}

H01L 29/365 ・・・{Planar doping, e.g. atomic-plane doping, delta-doping}

H01L 29/40 ・Electrodes; {Multistep manufacturing processes therefor}

H01L 29/401 ・・{Multistep manufacturing processes}

H01L 29/402 ・・{Field plates}

H01L 29/404 ・・・{Multiple field plate structures}

H01L 29/405 ・・・{Resistive arrangements, e.g. resistive or semi-insulating field plates}

H01L 29/407 ・・・{Recessed field plates, e.g. trench field plates, buried field plates}

H01L 29/408 ・・{with an insulating layer with a particular dielectric or electrostatic property, e.g. with static charges or for controlling trapped charges or moving ions, or with a plate acting on the insulator potential or the insulator charges, e.g. for controlling charges effect or potential distribution in the insulating layer, or with a semi-insulating layer contacting directly the semiconductor surface}

H01L 29/41 ・・characterised by their shape, relative sizes or dispositions

H01L 29/413 ・・・{Nanosized electrodes, e.g. nanowire electrodes comprising one or a plurality of nanowires (transparent electrodes comprising carbon nano-tubes H01L 51/444, nanotechnology per se B82B; nanosized carbon materials, e.g. carbon nanotubes, per se C01B 31/0206)}

H01L 29/417 ・・・carrying the current to be rectified, amplified or switched

H01L 29/41708 ・・・・{Emitter or collector electrodes for bipolar transistors}

H01L 29/41716 ・・・・{Cathode or anode electrodes for thyristors}

H01L 29/41725 ・・・・{Source or drain electrodes for field effect devices (with monocrystalline semiconductor on source/drain region H01L 29/0843)}

H01L 29/41733 ・・・・・{for thin film transistors with insulated gate}

H01L 29/41741 ・・・・・{for vertical or pseudo-vertical devices}

H01L 29/4175 ・・・・・{for lateral devices where the connection to the source or drain region is done through at least one part of the semiconductor substrate thickness, e.g. with connecting sink or with via-hole}

H01L 29/41758 ・・・・・{for lateral devices with structured layout for source or drain region, i.e. the source or drain region having cellular, interdigitated or ring structure or being curved or angular (H01L 29/41733 to H01L 29/4175 take precedence)}

H01L 29/41766 ・・・・・{with at least part of the source or drain electrode having contact below the semiconductor surface, e.g. the source or drain electrode formed at least partially in a groove or with inclusions of conductor inside the semiconductor (H01L 29/41733 to H01L 29/41758 take precedence)}

H01L 29/41775 ・・・・・{characterised by the proximity or the relative position of the source or drain electrode and the gate electrode, e.g. the source or drain electrode separated from the gate electrode by side-walls or spreading around or above the gate electrode}

H01L 29/41783 ・・・・・・{Raised source or drain electrodes self aligned with the gate}

H01L 29/41791 ・・・・・{for transistors with a horizontal current flow in a vertical sidewall, e.g. FinFET, MuGFET}

H01L 29/423 ・・・not carrying the current to be rectified, amplified or switched

H01L 29/42304 ・・・・{Base electrodes for bipolar transistors}

H01L 29/42308 ・・・・{Gate electrodes for thyristors}

H01L 29/42312 ・・・・{Gate electrodes for field effect devices}

H01L 29/42316 ・・・・・{for field-effect transistors}

H01L 29/4232 ・・・・・・{with insulated gate}

H01L 29/42324 ・・・・・・・{Gate electrodes for transistors with a floating gate}

H01L 29/42328 ・・・・・・・・{with at least one additional gate other than the floating gate and the control gate, e.g. program gate, erase gate or select gate}

H01L 29/42332 ・・・・・・・・{with the floating gate formed by two or more non connected parts, e.g. multi-particles flating gate}

H01L 29/42336 ・・・・・・・・{with one gate at least partly formed in a trench}

H01L 29/4234 ・・・・・・・{Gate electrodes for transistors with charge trapping gate insulator}

H01L 29/42344 ・・・・・・・・{with at least one additional gate, e.g. program gate, erase gate or select gate}

H01L 29/42348 ・・・・・・・・{with trapping site formed by at least two separated sites, e.g. multi-particles trapping site}

H01L 29/42352 ・・・・・・・・{with the gate at least partly formed in a trench}

H01L 29/42356 ・・・・・・・{Disposition, e.g. buried gate electrode (H01L 29/42324 and H01L 29/4234 take precedence)}{WARNING: This group and subgroup thereof are not complete, see provisionally also H01L 29/78, H01L 29/7801 and subgroups thereof, H01L 29/7827 and H01L 29/7834}

H01L 29/4236 ・・・・・・・・{within a trench, e.g. trench gate electrode, groove gate electrode }

H01L 29/42364 ・・・・・・・[N: characterised by the insulating layer, e.g. thickness or uniformity (H01L 29/42324 and H01L 29/4234 take precedence)

H01L 29/42368 ・・・・・・・・{the thickness being non-uniform}

H01L 29/42372 ・・・・・・・{characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out (H01L 29/42324 takes precedence)}

H01L 29/42376 ・・・・・・・・{characterised by the length or the sectional shape}

H01L 29/4238 ・・・・・・・・{characterised by the surface lay-out}

H01L 29/42384 ・・・・・・・{for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor}

H01L 29/42392 ・・・・・・・・{fully surrounding the channel, e.g. gate-all-around}

H01L 29/42396 ・・・・・{for charge coupled devices}

H01L 29/43 ・・characterised by the materials of which they are formed

H01L 29/432 ・・・{Heterojunction gate for field effect devices}

H01L 29/435 ・・・{Resistive materials for field effect devices, e.g. resistive gate for MOSFET or MESFET}

H01L 29/437 ・・・{Superconductor materials}

H01L 29/45 ・・・Ohmic electrodes

H01L 29/452 ・・・・{on AIII-BV compounds}

H01L 29/454 ・・・・・{on thin film AIII-BV compounds}

H01L 29/456 ・・・・{on silicon}

H01L 29/458 ・・・・・{for thin film silicon, e.g. source or drain electrode}

H01L 29/47 ・・・Schottky barrier electrodes {(H01L 29/435 takes precedence)}

H01L 29/475 ・・・・{on AIII-BV compounds}

H01L 29/49 ・・・Metal-insulator-semiconductor electrodes, {e.g. gates of MOSFET (H01L 29/435 takes precedence)}

H01L 29/4908 ・・・・{for thin film semiconductor, e.g. gate of TFT}

H01L 29/4916 ・・・・{the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen (H01L 29/4908, H01L 29/4983 take precedence)}

H01L 29/4925 ・・・・・{with a multiple layer structure, e.g. several silicon layers with different crystal structure or grain arrangement (with only a vertical doping structure or vertical doping variation H01L 29/4916)}

H01L 29/4933 ・・・・・・{with a silicide layer contacting the silicon layer, e.g. Polycide gate (with a barrier layer between the silicide and silicon layers H01L 29/4941)}

H01L 29/4941 ・・・・・・{with a barrier layer between the silicon and the metal or metal silicide upper layer, e.g. Silicide/TiN/Polysilicon}

H01L 29/495 ・・・・{the conductor material next to the insulator being a simple metal, e.g. W, Mo (H01L 29/4908, H01L 29/4983 take precedence)}

H01L 29/4958 ・・・・・{with a multiple layer structure}

H01L 29/4966 ・・・・{the conductor material next to the insulator being a composite material, e.g. organic material, TiN, MoSi2 (H01L 29/4908, H01L 29/4983 take precedence)}

H01L 29/4975 ・・・・・{being a silicide layer, e.g. TiSi2}

H01L 29/4983 ・・・・{with a lateral structure, e.g. a Polysilicon gate with a lateral doping variation or with a lateral composition variation or characterised by the sidewalls being composed of conductive, resistive or dielectric material}

H01L 29/4991 ・・・・・{comprising an air gap}{Warning: Not complete, see provisionally also H01L 29/4983}

H01L 29/51 ・・・・Insulating materials associated therewith {(for MIS structures on thin film semiconductor H01L 29/4908)}

H01L 29/511 ・・・・・{with a compositional variation, e.g. multilayer structures (H01L 29/516 takes precedence)}

H01L 29/512 ・・・・・・{the variation being parallel to the channel plane}

H01L 29/513 ・・・・・・{the variation being perpendicular to the channel plane}

H01L 29/515 ・・・・・{with cavities, e.g. containing a gas}

H01L 29/516 ・・・・・{with at least one ferroelectric layer}

H01L 29/517 ・・・・・{the insulating material comprising a metallic compound, e.g. metal oxide, metal silicate (H01L 29/518 takes precedence)}

H01L 29/518 ・・・・・{the insulating material containing nitrogen, e.g. nitride, oxynitride, nitrogen-doped material}

H01L 29/66 ・Types of semiconductor device; {Multistep manufacturing processes therefor}

H01L 29/66007 ・・{Multistep manufacturing processes}

H01L 29/66015 ・・・{of devices having a semiconductor body comprising semiconducting carbon, e.g. diamond, diamond-like carbon, graphene}

H01L 29/66022 ・・・・{the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices}

H01L 29/6603 ・・・・・{Diodes}

H01L 29/66037 ・・・・{the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices}

H01L 29/66045 ・・・・・{Field-effect transistors}

H01L 29/66053 ・・・{of devices having a semiconductor body comprising crystalline silicon carbide}

H01L 29/6606 ・・・・{the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices}

H01L 29/66068 ・・・・{the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices}

H01L 29/66075 ・・・{of devices having semiconductor bodies comprising group 14 or group 13/15 materials (comprising semiconducting carbon H01L 29/66015; comprising crystalline silicon carbide H01L 29/66053)}

H01L 29/66083 ・・・・{the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices}

H01L 29/6609 ・・・・・{Diodes}

H01L 29/66098 ・・・・・・{Breakdown diodes}

H01L 29/66106 ・・・・・・・{Zener diodes}

H01L 29/66113 ・・・・・・・{Avalanche diodes}

H01L 29/66121 ・・・・・・{Multilayer diodes, e.g. PNPN diodes}

H01L 29/66128 ・・・・・・{Planar diodes}

H01L 29/66136 ・・・・・・{PN junction diodes}

H01L 29/66143 ・・・・・・{Schottky diodes}

H01L 29/66151 ・・・・・・{Tunnel diodes (group 13/15 resonant tunneling diodes H01L 29/66219)}

H01L 29/66159 ・・・・・・{Transit time diodes, e.g. IMPATT, TRAPATT diodes}

H01L 29/66166 ・・・・・{Resistors with PN junction}

H01L 29/66174 ・・・・・{Capacitors with PN or Schottky junction, e.g. varactors (capacitors with

H01L 29/66181 ・・・・・{Conductor-insulator-semiconductor capacitors, e.g. trench capacitors}

H01L 29/66189 ・・・・・・{with PN junction, e.g. hybrid capacitors}

H01L 29/66196 ・・・・・{with an active layer made of a group 13/15 material}

H01L 29/66204 ・・・・・・{Diodes}

H01L 29/66212 ・・・・・・・{Schottky diodes}

H01L 29/66219 ・・・・・・・{with a heterojunction, e.g. resonant tunneling diodes [RTD}]

H01L 29/66227 ・・・・{the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices}

H01L 29/66234 ・・・・・{Bipolar junction transistors [BJT}]

H01L 29/66242 ・・・・・・{Heterojunction transistors [HBT}(with an active layer made of a group 13/15 material H01L 29/66318)]

H01L 29/6625 ・・・・・・{Lateral transistors (H01L 29/66242 and H01L 29/66265 take precedence)}

H01L 29/66257 ・・・・・・{Schottky transistors}

H01L 29/66265 ・・・・・・{Thin film bipolar transistors (H01L 29/66242 takes precedence)}

H01L 29/66272 ・・・・・・{Silicon vertical transistors (H01L 29/66242, H01L 29/66257 and H01L 29/66265 take precedence)}

H01L 29/6628 ・・・・・・・{Inverse transistors}

H01L 29/66287 ・・・・・・・{with a single crystalline emitter, collector or base including extrinsic, link or graft base formed on the silicon substrate, e.g. by epitaxy, recrystallisation, after insulating device isolation (H01L 29/6628 takes precedence)}

H01L 29/66295 ・・・・・・・{with main current going through the whole silicon substrate, e.g. power bipolar transistor}

H01L 29/66303 ・・・・・・・・{with multi-emitter, e.g. interdigitated, multi-cellular or distributed emitter}

H01L 29/6631 ・・・・・・{with an active layer made of a group 13/15 material}

H01L 29/66318 ・・・・・・・{Heterojunction transistors}

H01L 29/66325 ・・・・・・{controlled by field-effect, e.g. insulated gate bipolar transistors [IGBT}]

H01L 29/66333 ・・・・・・・{Vertical insulated gate bipolar transistors}

H01L 29/6634 ・・・・・・・・{with a recess formed by etching in the source/emitter contact region (H01L 29/66348 takes precedence; etching of semiconductor bodies H01L 21/302)}

H01L 29/66348 ・・・・・・・・{with a recessed gate}

H01L 29/66356 ・・・・・{Gated diodes, e.g. field controlled diodes [FCD}, static induction thyristors [SITh], field controlled thyristors [FCTh]]

H01L 29/66363 ・・・・・{Thyristors}

H01L 29/66371 ・・・・・・{structurally associated with another device, e.g. built-in diode (making integrated circuits H01L 21/82)}

H01L 29/66378 ・・・・・・・{the other device being a controlling field-effect device}

H01L 29/66386 ・・・・・・{Bidirectional thyristors}

H01L 29/66393 ・・・・・・{Lateral or planar thyristors}

H01L 29/66401 ・・・・・・{with an active layer made of a group 13/15 material}

H01L 29/66409 ・・・・・{Unipolar field-effect transistors}

H01L 29/66416 ・・・・・・{Static induction transistors [SIT}(with an active layer made of a group 13/15 material H01L 29/66454)]

H01L 29/66424 ・・・・・・・{Permeable base transistors [PBT}]

H01L 29/66431 ・・・・・・{with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT (with an active layer made of a group 13/15 material H01L 29/66462)}

H01L 29/66439 ・・・・・・{with a one- or zero-dimensional channel, e.g. quantum wire FET, in-plane gate transistor [IPG}, single electron transistor [SET], striped channel transistor, Coulomb blockade transistor (with an active layer made of a group 13/15 material H01L 29/66469)]

H01L 29/66446 ・・・・・・{with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT}, group 13/15 negative resistance FET [NERFET]]

H01L 29/66454 ・・・・・・・{Static induction transistors [SIT}, e.g. permeable base transistors [PBT]]

H01L 29/66462 ・・・・・・・{with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT}

H01L 29/66469 ・・・・・・・{with one- or zero-dimensional channel, e.g. quantum wire field-effect transistors, in-plane gate transistors [IPG}, single electron transistors [SET], Coulomb blockade transistors, striped channel transistors]

H01L 29/66477 ・・・・・・{with an insulated gate, i.e. MISFET}

H01L 29/66484 ・・・・・・・{with multiple gate, at least one gate being an insulated gate (H01L 29/66742 takes precedence)}

H01L 29/66492 ・・・・・・・{with a pocket or a lightly doped drain selectively formed at the side of the gate}

H01L 29/665 ・・・・・・・{using self aligned silicidation, i.e. salicide (formation of conductive layers comprising silicides H01L 21/28518)}

H01L 29/66507 ・・・・・・・・{providing different silicide thicknesses on the gate and on source or drain}

H01L 29/66515 ・・・・・・・{using self aligned selective metal deposition simultaneously on the gate and on source or drain}

H01L 29/66522 ・・・・・・・{with an active layer made of a group 13/15 material (H01L 29/66446 takes precedence)}

H01L 29/6653 ・・・・・・・{using the removal of at least part of spacer, e.g. disposable spacer}

H01L 29/66537 ・・・・・・・{using a self aligned punch through stopper or threshold implant under the gate region (H01L 29/66606 takes precedence)}

H01L 29/66545 ・・・・・・・{using a dummy, i.e. replacement gate in a process wherein at least a part of the final gate is self aligned to the dummy gate}

H01L 29/66553 ・・・・・・・{using inside spacers, permanent or not}

H01L 29/6656 ・・・・・・・{using multiple spacer layers, e.g. multiple sidewall spacers}

H01L 29/66568 ・・・・・・・{Lateral single gate silicon transistors}

H01L 29/66575 ・・・・・・・・{where the source and drain or source and drain extensions are self-aligned to the sides of the gate (H01L 29/66606 takes precedence)}

H01L 29/66583 ・・・・・・・・・{with initial gate mask or masking layer complementary to the prospective gate location, e.g. with dummy source and drain contacts}

H01L 29/6659 ・・・・・・・・・{with both lightly doped source and drain extensions and source and drain self-aligned to the sides of the gate, e.g. lightly doped drain [LDD} MOSFET, double diffused drain [DDD] MOSFET]

H01L 29/66598 ・・・・・・・・・・{forming drain [D} and lightly doped drain [LDD] simultaneously, e.g. using implantation through the wings a T-shaped layer, or through a specially shaped layer]

H01L 29/66606 ・・・・・・・・{with final source and drain contacts formation strictly before final or dummy gate formation, e.g. contact first technology (H01L 29/66621 takes precedence)}

H01L 29/66613 ・・・・・・・・{with a gate recessing step, e.g. using local oxidation (making recessed gate LDMOS transistors H01L 29/66704)}

H01L 29/66621 ・・・・・・・・・{using etching to form a recess at the gate location (etching of semiconductor bodies H01L 21/302)}

H01L 29/66628 ・・・・・・・・・{recessing the gate by forming single crystalline semiconductor material at the source or drain location}

H01L 29/66636 ・・・・・・・・{with source or drain recessed by etching or first recessed by etching and then refilled}

H01L 29/66643 ・・・・・・・・{with source or drain regions formed by a Schottky barrier or a conductor-insulator-semiconductor structure}

H01L 29/66651 ・・・・・・・・{with a single crystalline channel formed on the silicon substrate after insulating device isolation}

H01L 29/66659 ・・・・・・・・{with asymmetry in the channel direction, e.g. lateral high-voltage MISFETs with drain offset region, extended drain MISFETs}

H01L 29/66666 ・・・・・・・{Vertical transistors (H01L 29/66712, H01L 29/66742 take precedence)}

H01L 29/66674 ・・・・・・・{DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region (making lateral high-voltage MISFETs with channel well and drain offset region H01L 29/66659)}

H01L 29/66681 ・・・・・・・・{Lateral DMOS transistors, i.e. LDMOS transistors}

H01L 29/66689 ・・・・・・・・・{with a step of forming an insulating sidewall spacer (forming insulating material on a substrate H01L 21/02107)}

H01L 29/66696 ・・・・・・・・・{with a step of recessing the source electrode}

H01L 29/66704 ・・・・・・・・・{with a step of recessing the gate electrode, e.g. to form a trench gate electrode}

H01L 29/66712 ・・・・・・・・{Vertical DMOS transistors, i.e. VDMOS transistors}

H01L 29/66719 ・・・・・・・・・{With a step of forming an insulating sidewall spacer}

H01L 29/66727 ・・・・・・・・・{with a step of recessing the source electrode}

H01L 29/66734 ・・・・・・・・・{with a step of recessing the gate electrode, e.g. to form a trench gate electrode}

H01L 29/66742 ・・・・・・・{Thin film unipolar transistors}

H01L 29/6675 ・・・・・・・・{Amorphous silicon or polysilicon transistors}

H01L 29/66757 ・・・・・・・・・{Lateral single gate single channel transistors with non-inverted structure, i.e. the channel layer is formed before the gate}

H01L 29/66765 ・・・・・・・・・{Lateral single gate single channel transistors with inverted structure, i.e. the channel layer is formed after the gate}

H01L 29/66772 ・・・・・・・・{Monocristalline silicon transistors on insulating substrates, e.g. quartz substrates (H01L 29/66666 takes precedence; thin film FinFETs H01L 29/66M6T6F16B)}

H01L 29/6678 ・・・・・・・・・{on sapphire substrates, e.g. SOS transistors}

H01L 29/66787 ・・・・・・・{with a gate at the side of the channel}

H01L 29/66795 ・・・・・・・・{with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET}

H01L 29/66803 ・・・・・・・・・{with a step of doping the vertical sidewall, e.g. using tilted or multi-angled implants}

H01L 29/6681 ・・・・・・・・・{using dummy structures having essentially the same shape as the semiconductor body, e.g. to provide stability}

H01L 29/66818 ・・・・・・・・・{the channel being thinned after patterning, e.g. sacrificial oxidation on fin}

H01L 29/66825 ・・・・・・・{with a floating gate (H01L 29/6684 takes precedence)}

H01L 29/66833 ・・・・・・・{with a charge trapping gate insulator, e.g. MNOS transistors}

H01L 29/6684 ・・・・・・・{with a ferroelectric gate insulator}

H01L 29/66848 ・・・・・・{with a Schottky gate, i.e. MESFET}

H01L 29/66856 ・・・・・・・{with an active layer made of a group 13/15 material (H01L 29/66446 takes precedence)}

H01L 29/66863 ・・・・・・・・{Lateral single gate transistors}

H01L 29/66871 ・・・・・・・・・{Processes wherein the final gate is made after the formation of the source and drain regions in the active layer, e.g. dummy-gate processes}

H01L 29/66878 ・・・・・・・・・{Processes wherein the final gate is made before the formation, e.g. activation anneal, of the source and drain regions in the active layer}

H01L 29/66886 ・・・・・・・・・{Lateral transistors with two or more independent gates}

H01L 29/66893 ・・・・・・{with a PN junction gate, i.e. JFET}

H01L 29/66901 ・・・・・・・{with a PN homojunction gate}

H01L 29/66909 ・・・・・・・・{Vertical transistors, e.g. tecnetrons}

H01L 29/66916 ・・・・・・・{with a PN heterojunction gate}

H01L 29/66924 ・・・・・・・{with an active layer made of a group 13/15 material (H01L 29/66446 takes precedence)}

H01L 29/66931 ・・・・・{BJT-like unipolar transistors, e.g. hot electron transistors [HET}, metal base transistors [MBT], resonant tunneling transistor [RTT], bulk barrier transistor [BBT], planar doped barrier transistor [PDBT], charge injection transistor [CHINT]]

H01L 29/66939 ・・・・・・{with an active layer made of a group 13/15 material}

H01L 29/66946 ・・・・・{Charge transfer devices}

H01L 29/66954 ・・・・・・{with an insulated gate}

H01L 29/66962 ・・・・・・{with a Schottky gate}

H01L 29/66969 ・・・{of devices having semiconductor bodies not comprising group 14 or group 13/15 materials (comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials, comprising cuprous oxide or cuprous iodide H01L 21/02365)}

H01L 29/66977 ・・{Quantum effect devices, e.g. using quantum reflection, diffraction or interference effects, i.e. Bragg- or Aharonov-Bohm effects}

H01L 29/66984 ・・{Devices using spin polarized carriers}

H01L 29/66992 ・・{controllable only by the variation of applied heat (controllable by IR radiation H01L 31/00; measuring quantity of heat G01K 17/00)}

H01L 29/68 ・・controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched

H01L 29/685 ・・・{Hi-Lo semiconductor devices, e.g. memory devices}

H01L 29/70 ・・・Bipolar devices

H01L 29/705 ・・・・{Double base diodes}

H01L 29/72 ・・・・Transistor-type devices, i.e. able to continuously respond to applied control signals

H01L 29/73 ・・・・・Bipolar junction transistors

H01L 29/7302 ・・・・・・{structurally associated with other devices (assemblies of devices H01L 25/00; integrated circuits H01L 27/00; IGBT H01L 29/7393)}

H01L 29/7304 ・・・・・・・{the device being a resistive element, e.g. ballasting resistor (transistors integrated with resistors H01L 27/075)}

H01L 29/7306 ・・・・・・{Point contact transistors}

H01L 29/7308 ・・・・・・{Schottky transistors}

H01L 29/7311 ・・・・・・{Tunnel transistors}

H01L 29/7313 ・・・・・・{Avalanche transistors}

H01L 29/7315 ・・・・・・{Transistors with hook collector}

H01L 29/7317 ・・・・・・{Bipolar thin film transistors}

H01L 29/732 ・・・・・・Vertical transistors

H01L 29/7322 ・・・・・・・{having emitter-base and base-collector junctions leaving at the same surface of the body, e.g. planar transistor}

H01L 29/7325 ・・・・・・・{having an emitter-base junction leaving at a main surface and a base-collector junction leaving at a peripheral surface of the body, e.g. mesa planar transistor}

H01L 29/7327 ・・・・・・・{Inverse vertical transistors}

H01L 29/735 ・・・・・・Lateral transistors

H01L 29/737 ・・・・・・Hetero-junction transistors

H01L 29/7371 ・・・・・・・{Vertical transistors}

H01L 29/7373 ・・・・・・・・{having a two-dimensional base, e.g. modulation-doped base, inversion layer base, delta-doped base}

H01L 29/7375 ・・・・・・・・{having an emitter comprising one or more non-monocrystalline elements of group IV, e.g. amorphous silicon, alloys comprising group IV elements}

H01L 29/7376 ・・・・・・・・{Resonant tunnelling transistors}

H01L 29/7378 ・・・・・・・・{comprising lattice mismatched active layers, e.g. SiGe strained layer transistors}

H01L 29/739 ・・・・・controlled by field-effect, {e.g. bipolar static induction transistors (BSIT) (unijunction transistors H01L 29/705)}

H01L 29/7391 ・・・・・・{Gated diode structures}

H01L 29/7392 ・・・・・・・{with PN junction gate, e.g. field controlled thyristors (FCTh), static induction thyristors (SITh)}

H01L 29/7393 ・・・・・・{Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET}

H01L 29/7394 ・・・・・・・{on an insulating layer or substrate, e.g. thin film device or device isolated from the bulk substrate (H01L 29/7398 takes precedence)}

H01L 29/7395 ・・・・・・・{Vertical transistors, e.g. vertical IGBT}

H01L 29/7396 ・・・・・・・・{with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions (H01L 29/7398 takes precedence)}

H01L 29/7397 ・・・・・・・・・{and a gate structure lying on a slanted or vertical surface or formed in a groove, e.g. trench gate IGBT}

H01L 29/7398 ・・・・・・・・{with both emitter and collector contacts in the same substrate side}

H01L 29/74 ・・・・Thyristor-type devices, e.g. having four-zone regenerative action{(two-terminal thyristorsH01L 29/87)}

H01L 29/7404 ・・・・・{structurally associated with at least one other device (assemblies H01L 25/00; integrated circuits H01L 27/00)}

H01L 29/7408 ・・・・・・{the device being a capacitor or a resistor}

H01L 29/7412 ・・・・・・{the device being a diode}

H01L 29/7416 ・・・・・・・{the device being an antiparallel diode, e.g. RCT (shorted anode structures enabling reverse conduction H01L 29/0834)}

H01L 29/742 ・・・・・・{the device being a field effect transistor (for turn-on or turn-off by field effect H01L 29/745, H01L 29/749)}

H01L 29/7424 ・・・・・{having a built-in localised breakdown/breakover region, e.g. self-protected against destructive spontaneous, e.g. voltage breakover, firing}

H01L 29/7428 ・・・・・{having an amplifying gate structure, e.g. cascade (Darlington) configuration}

H01L 29/7432 ・・・・・{Asymmetrical thyristors (with a particular shorted anode structure H01L 29/0834)}

H01L 29/7436 ・・・・・{Lateral thyristors}

H01L 29/744 ・・・・・Gate-turn-off devices

H01L 29/745 ・・・・・・with turn-off by field effect

H01L 29/7455 ・・・・・・・{produced by an insulated gate structure}

H01L 29/747 ・・・・・Bidirectional devices, e.g. triacs

H01L 29/749 ・・・・・with turn-on by field effect

H01L 29/76 ・・・Unipolar devices, {e.g. field effect transistors}

H01L 29/7606 ・・・・{Transistor-like structures, e.g. hot electron transistor (HET); metal base transistor (MBT)}

H01L 29/7613 ・・・・{Single electron transistors; Coulomb blockade devices (H01L 29/7888 takes precedence)}

H01L 29/762 ・・・・Charge transfer devices

H01L 29/765 ・・・・・Charge-coupled devices {(peripheral circuits for CCD storage devices G11C 19/285)}

H01L 29/768 ・・・・・・with field effect produced by an insulated gate

H01L 29/76808 ・・・・・・・{Input structures}

H01L 29/76816 ・・・・・・・{Output structures}

H01L 29/76825 ・・・・・・・{Structures for regeneration, refreshing, leakage compensation or the like}

H01L 29/76833 ・・・・・・・{Buried channel CCD}

H01L 29/76841 ・・・・・・・・{Two-Phase CCD}

H01L 29/7685 ・・・・・・・・{Three-Phase CCD}

H01L 29/76858 ・・・・・・・・{Four-Phase CCD}

H01L 29/76866 ・・・・・・・{Surface Channel CCD}

H01L 29/76875 ・・・・・・・・{Two-Phase CCD}

H01L 29/76883 ・・・・・・・・{Three-Phase CCD}

H01L 29/76891 ・・・・・・・・{Four-Phase CCD}

H01L 29/772 ・・・・Field effect transistors

H01L 29/7722 ・・・・・{using static field induced regions, e.g. SIT, PBT}

H01L 29/7725 ・・・・・{with delta-doped channel (H01L 29/778 takes precedence)}

H01L 29/7727 ・・・・・{Velocity modulation transistors, i.e. VMT}

H01L 29/775 ・・・・・with one dimensional charge carrier gas channel, e.g. quantum wire FET

H01L 29/778 ・・・・・with two-dimensional charge carrier gas channel, e.g. HEMT; {with two-dimensional charge-carrier layer formed at a heterojunction interface (H01L 29/804B4 takes precedence)}

H01L 29/7781 ・・・・・・{with inverted single heterostructure, i.e. with active layer formed on top of wide bandgap layer, e.g. IHEMT}

H01L 29/7782 ・・・・・・{with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET}

H01L 29/7783 ・・・・・・・{using III-V semiconductor material}

H01L 29/7784 ・・・・・・・・{with delta or planar doped donor layer (H01L 29/7785 takes precedence)}

H01L 29/7785 ・・・・・・・・{with more than one donor layer}

H01L 29/7786 ・・・・・・{with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT}

H01L 29/7787 ・・・・・・・{with wide bandgap charge-carrier supplying layer, e.g. direct single heterostructure MODFET}

H01L 29/7788 ・・・・・・{Vertical transistors}

H01L 29/7789 ・・・・・・{the two-dimensional charge carrier gas being at least partially not parallel to a main surface of the semiconductor body}

H01L 29/78 ・・・・・with field effect produced by an insulated gate {(H01L 29/7725, H01L 29/775, H01L 29/778 take precedence)}

H01L 29/7801 ・・・・・・{DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region (lateral high-voltage MISFETs with channel well and drain offset region H01L 29/7835)}