WebCPC CPC COOPERATIVE PATENT CLASSIFICATION

C30B　SINGLE-CRYSTAL-GROWTH (by using ultra-high pressure, e.g. for the formation of diamonds B01J 3/06); UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL (zone-refining of metals or alloys C22B); PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (casting of metals, casting of other substances by the same processes or devices B22D; working of plastics B29; modifying the physical structure of metals or alloys C21D, C22F); SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (for producing semiconductor devices or parts thereof H01L); APPARATUS THEREFOR

C30B 1/00 Single-crystal growth directly from the solid state (unidirectional demixing of eutectoid materials C30B 3/00; under a protective fluid C30B 27/00)

C30B 1/02 ・by thermal treatment, e.g. strain annealing (C30B 1/12 takes precedence)

C30B 1/023 ・・{from solids with amorphous structure}

C30B 1/026 ・・{Solid phase epitaxial growth through a disordered intermediate layer}

C30B 1/04 ・・Isothermal recrystallisation

C30B 1/06 ・・Recrystallisation under a temperature gradient

C30B 1/08 ・・・Zone recrystallisation

C30B 1/10 ・by solid state reactions or multi-phase diffusion

C30B 1/12 ・by pressure treatment during the growth

C30B 3/00 Unidirectional demixing of eutectoid materials

C30B 5/00 Single-crystal growth from gels (under a protective fluid C30B 27/00)

C30B 5/02 ・with addition of doping material

C30B 7/00 Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions (from molten solvents C30B 9/00; by normal or gradient freezing C30B 11/00; under a protective fluid C30B 27/00)

C30B 7/005 ・{Epitaxial layer growth}

C30B 7/02 ・by evaporation of the solvent

C30B 7/04 ・・using aqueous solvents

C30B 7/06 ・・using non-aqueous solvents

C30B 7/08 ・by cooling of the solution

C30B 7/10 ・by application of pressure, e.g. hydrothermal processes

C30B 7/105 ・・{using ammonia as solvent, i.e. ammonothermal processes}

C30B 7/12 ・by electrolysis

C30B 7/14 ・the crystallising material being formed by chemical reactions in the solution

C30B 9/00 Single-crystal growth from melt solutions using molten solvents (by normal or gradient freezing C30B 11/00; by zone-melting C30B 13/00; by crystal pulling C30B 15/00; on immersed seed crystal C30B 17/00; by liquid phase epitaxial growth C30B 19/00; under a protective fluid C30B 27/00)

C30B 9/02 ・by evaporation of the molten solvent

C30B 9/04 ・by cooling of the solution

C30B 9/06 ・・using as solvent a component of the crystal composition

C30B 9/08 ・・using other solvents

C30B 9/10 ・・・Metal solvents

C30B 9/12 ・・・Salt solvents, e.g. flux growth

C30B 9/14 ・by electrolysis

C30B 11/00 Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method (C30B 13/00, C30B 15/00, C30B 17/00, C30B 19/00 take precedence; under a protective fluid C30B 27/00)

C30B 11/001 ・{Continuous growth}

C30B 11/002 ・{Crucibles or containers for supporting the melt}

C30B 11/003 ・{Heating or cooling of the melt or the crystallised material}

C30B 11/005 ・{by irradiation or electric discharge}

C30B 11/006 ・{Controlling or regulating}

C30B 11/007 ・{Mechanisms for moving either the charge or the heater}

C30B 11/008 ・{using centrifugal force to the charge}

C30B 11/02 ・without using solvents (C30B 11/06 takes precedence)

C30B 11/04 ・adding crystallising material or reactants forming it in situ to the melt

C30B 11/06 ・・at least one but not all components of the crystal composition being added

C30B 11/065 ・・・{before crystallising, e.g. synthesis}

C30B 11/08 ・・every component of the crystal composition being added during the crystallisation

C30B 11/10 ・・・Solid or liquid components, e.g. Verneuil method

C30B 11/12 ・・・Vaporous components, e.g. vapour-liquid-solid-growth

C30B 11/14 ・characterised by the seed, e.g. its crystallographic orientation

C30B 13/00 Single-crystal growth by zone-melting; Refining by zone-melting (C30B 17/00 takes precedence; by changing the cross-section of the treated solid C30B 15/00; under a protective fluid C30B 27/00; zone-refining of specific materials, see the relevant subclasses for the materials)

C30B 13/005 ・{Continuous growth}

C30B 13/02 ・Zone-melting with a solvent, e.g. travelling solvent process

C30B 13/04 ・Homogenisation by zone-levelling

C30B 13/06 ・the molten zone not extending over the whole cross-section

C30B 13/08 ・adding crystallising material or reactants forming it in situ to the molten zone

C30B 13/10 ・・with addition of doping material

C30B 13/12 ・・・in the gaseous or vapour state

C30B 13/14 ・Crucibles or vessels

C30B 13/16 ・Heating of the molten zone

C30B 13/18 ・・the heating element being in contact with, or immersed in, the molten zone

C30B 13/20 ・・by induction, e.g. hot wire technique (C30B 13/18 takes precedence; induction coils H05B 6/36)

C30B 13/22 ・・by irradiation or electric discharge

C30B 13/24 ・・・using electromagnetic waves

C30B 13/26 ・Stirring of the molten zone

C30B 13/28 ・Controlling or regulating (controlling or regulating in general G05)

C30B 13/285 ・・{Crystal holders, e.g. chucks}

C30B 13/30 ・・Stabilisation or shape controlling of the molten zone, e.g. by concentrators, by electromagnetic fields; Controlling the section of the crystal

C30B 13/32 ・Mechanisms for moving either the charge or the heater

C30B 13/34 ・characterised by the seed, e.g. by its crystallographic orientation

C30B 15/00 Single-crystal growth by pulling from a melt, e.g. Czochralski method (under a protective fluid C30B 27/00)

C30B 15/002 ・{Continuous growth}

C30B 15/005 ・{Simultaneous pulling of more than one crystal}

C30B 15/007 ・{Pulling on a substrate}

C30B 15/02 ・adding crystallising material or reactants forming it in situ to the melt

C30B 15/04 ・・adding doping material, e.g. for n-p-junction

C30B 15/06 ・Non-vertical pulling

C30B 15/08 ・Downward pulling

C30B 15/10 ・Crucibles or containers for supporting the melt

C30B 15/12 ・・Double crucible methods

C30B 15/14 ・Heating of the melt or the crystallised material

C30B 15/16 ・・by irradiation or electric discharge

C30B 15/18 ・・using direct resistance heating in addition to other methods of heating, e.g. using Peltier heat

C30B 15/20 ・Controlling or regulating (controlling or regulating in general G05)

C30B 15/203 ・・{the relationship of pull rate (v) to axial thermal gradient (G)}

C30B 15/206 ・・{the thermal history of growing the ingot}

C30B 15/22 ・・Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal

C30B 15/24 ・・・using mechanical means, e.g. shaping guides (shaping dies for edge-defined film-fed crystal growth C30B 15/34)

C30B 15/26 ・・・using television detectors; using photo or X-ray detectors

C30B 15/28 ・・・using weight changes of the crystal or the melt, e.g. flotation methods

C30B 15/30 ・Mechanisms for rotating or moving either the melt or the crystal (flotation methods C30B 15/28)

C30B 15/305 ・・{Stirring of the melt}

C30B 15/32 ・Seed holders, e.g. chucks

C30B 15/34 ・Edge-defined film-fed crystal-growth using dies or slits

C30B 15/36 ・characterised by the seed, e.g. its crystallographic orientation

C30B 17/00 Single-crystal growth onto a seed which remains in the melt during growth, e.g. Nacken-Kyropoulos method (C30B 15/00 takes precedence)

C30B 19/00 Liquid-phase epitaxial-layer growth

C30B 19/02 ・using molten solvents, e.g. flux

C30B 19/04 ・・the solvent being a component of the crystal composition

C30B 19/06 ・Reaction chambers; Boats for supporting the melt; Substrate holders

C30B 19/061 ・・{Tipping system, e.g. by rotation}

C30B 19/062 ・・{Vertical dipping system}

C30B 19/063 ・・{Sliding boat system}

C30B 19/064 ・・{Rotating sliding boat system}

C30B 19/065 ・・{Multiple stacked slider system}

C30B 19/066 ・・{Injection or centrifugal force system}

C30B 19/067 ・・{Boots or containers}

C30B 19/068 ・・{Substrate holders}

C30B 19/08 ・Heating of the reaction chamber or the substrate

C30B 19/10 ・Controlling or regulating (controlling or regulating in general G05)

C30B 19/103 ・・{Current controlled or induced growth}

C30B 19/106 ・・{adding crystallising material or reactants forming it in situ to the liquid}

C30B 19/12 ・characterised by the substrate

C30B 21/00 Unidirectional solidification of eutectic materials

C30B 21/02 ・by normal casting or gradient freezing

C30B 21/04 ・by zone-melting

C30B 21/06 ・by pulling from a melt

C30B 23/00 Single-crystal growth by condensing evaporated or sublimed material

C30B 23/002 ・{Controlling or regulating}

C30B 23/005 ・・{Controlling or regulating flux or flow of depositing species or vapour}

C30B 23/007 ・{Growth of whiskers or needles}

C30B 23/02 ・Epitaxial-layer growth

C30B 23/025 ・・{characterised by the substrate}

C30B 23/04 ・・Pattern deposit, e.g. by using masks

C30B 23/06 ・・Heating of the deposition chamber, the substrate or the material to be evaporated

C30B 23/063 ・・・{Heating of the substrate}

C30B 23/066 ・・・{Heating of the material to be evaporated}

C30B 23/08 ・・by condensing ionised vapours (by reactive sputtering C30B 25/06)

C30B 25/00 Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth

C30B 25/005 ・{Growth of whiskers or needles}

C30B 25/02 ・Epitaxial-layer growth

C30B 25/025 ・・{Continuous growth}

C30B 25/04 ・・Pattern deposit, e.g. by using masks

C30B 25/06 ・・by reactive sputtering

C30B 25/08 ・・Reaction chambers; Selection of material therefor

C30B 25/10 ・・Heating of the reaction chamber or the substrate

C30B 25/105 ・・・{by irradiation or electric discharge}

C30B 25/12 ・・Substrate holders or susceptors

C30B 25/14 ・・Feed and outlet means for the gases; Modifying the flow of the reactive gases

C30B 25/16 ・・Controlling or regulating (controlling or regulating in general G05)

C30B 25/165 ・・・{the flow of the reactive gases}

C30B 25/18 ・・characterised by the substrate

C30B 25/183 ・・・{being provided with a buffer layer, e.g. a lattice matching layer}

C30B 25/186 ・・・{being specially pre-treated by e.g. chemical or physical means}

C30B 25/20 ・・・the substrate being of the same material as the epitaxial layer

C30B 25/205 ・・・・{the substrate being of insulating material}

C30B 25/22 ・・Sandwich processes

C30B 27/00 Single-crystal growth under a protective fluid

C30B 27/02 ・by pulling from a melt

C30B 28/00 Production of homogeneous polycrystalline material with defined structure

C30B 28/02 ・directly from the solid state

C30B 28/04 ・from liquids

C30B 28/06 ・・by normal freezing or freezing under temperature gradient

C30B 28/08 ・・by zone-melting

C30B 28/10 ・・by pulling from a melt

C30B 28/12 ・directly from the gas state

C30B 28/14 ・・by chemical reaction of reactive gases

C30B 29/00 Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape (alloys C22C)

C30B 29/02 ・Elements

C30B 29/04 ・・Diamond

C30B 29/06 ・・Silicon

C30B 29/08 ・・Germanium

C30B 29/10 ・Inorganic compounds or compositions

C30B 29/12 ・・Halides

C30B 29/14 ・・Phosphates

C30B 29/16 ・・Oxides

C30B 29/18 ・・・Quartz

C30B 29/20 ・・・Aluminium oxides

C30B 29/22 ・・・Complex oxides

C30B 29/225 ・・・・{based on rare earth copper oxides, e.g. high T-superconductors}

C30B 29/24 ・・・・with formula AMeO3, wherein A is a rare earth metal and Me is Fe, Ga, Sc, Cr, Co or Al, e.g. ortho ferrites

C30B 29/26 ・・・・with formula BMe2O4, wherein B is Mg, Ni, Co, Al, Zn, or Cd and Me is Fe, Ga, Sc, Cr, Co, or Al

C30B 29/28 ・・・・with formula A3Me5O12 wherein A is a rare earth metal and Me is Fe, Ga, Sc, Cr, Co or Al, e.g. garnets

C30B 29/30 ・・・・Niobates; Vanadates; Tantalates

C30B 29/32 ・・・・Titanates; Germanates; Molybdates; Tungstates

C30B 29/34 ・・Silicates

C30B 29/36 ・・Carbides

C30B 29/38 ・・Nitrides

C30B 29/40 ・・AIIIBV compounds {wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi}

C30B 29/403 ・・・AIII-nitrides

C30B 29/406 ・・・・Gallium nitride

C30B 29/42 ・・・Gallium arsenide

C30B 29/44 ・・・Gallium phosphide

C30B 29/46 ・・Sulfur-, selenium- or tellurium-containing compounds

C30B 29/48 ・・・AIIBVI compounds {wherein A is Zn, Cd or Hg, and B is S, Se or Te}

C30B 29/50 ・・・・Cadmium sulfide

C30B 29/52 ・・Alloys

C30B 29/54 ・Organic compounds

C30B 29/56 ・・Tartrates

C30B 29/58 ・・Macromolecular compounds

C30B 29/60 ・characterised by shape

C30B 29/602 ・・{Nanotubes}

C30B 29/605 ・・{Products containing multiple oriented crystallites, e.g. columnar crystallites}

C30B 29/607 ・・[N: Crystals of complex geometrical shape, e.g. tubes, cylinders (nanotubes 29/60B)

C30B 29/62 ・・Whiskers or needles

C30B 29/64 ・・Flat crystals, e.g. plates, strips, disks

C30B 29/66 ・・Crystals of complex geometrical shape, e.g. tubes, cylinders

C30B 29/68 ・・Crystals with laminate structure, e.g. "superlattices"

C30B 30/00 Production of single crystals or homogeneous polycrystalline material with defined structure characterised by the action of electric or magnetic fields, wave energy or other specific physical conditions

C30B 30/02 ・using electric fields, e.g. electrolysis

C30B 30/04 ・using magnetic fields

C30B 30/06 ・using mechanical vibrations

C30B 30/08 ・in conditions of zero-gravity or low gravity

C30B 31/00 Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor

C30B 31/02 ・by contacting with diffusion material in the solid state

C30B 31/04 ・by contacting with diffusion material in the liquid state

C30B 31/045 ・・{by electrolysis}

C30B 31/06 ・by contacting with diffusion material in the gaseous state (C30B 31/18 takes precedence)

C30B 31/08 ・・the diffusion material being a compound of the elements to be diffused

C30B 31/10 ・・Reaction chambers; Selection of material therefor

C30B 31/103 ・・・{Mechanisms for moving either the charge or heater}

C30B 31/106 ・・・{Continuous processes}

C30B 31/12 ・・Heating of the reaction chamber

C30B 31/14 ・・Substrate holders or susceptors

C30B 31/16 ・・Feed and outlet means for the gases; Modifying the flow of the gases

C30B 31/165 ・・・{Diffusion sources}

C30B 31/18 ・・Controlling or regulating (controlling or regulating in general G05)

C30B 31/185 ・・・{Pattern diffusion, e.g. by using masks}

C30B 31/20 ・Doping by irradiation with electromagnetic waves or by particle radiation

C30B 31/22 ・・by ion-implantation

C30B 33/00 After-treatment of single crystals or homogeneous polycrystalline material with defined structure (C30B 31/00 takes precedence; grinding, polishing B24; mechanical fine working of gems, jewels, crystals B28D 5/00)

C30B 33/005 ・{Oxydation}

C30B 33/02 ・Heat treatment (C30B 33/04, C30B 33/06 take precedence)

C30B 33/04 ・using electric or magnetic fields or particle radiation

C30B 33/06 ・Joining of crystals

C30B 33/08 ・Etching

C30B 33/10 ・・in solutions or melts

C30B 33/12 ・・in gas atmosphere or plasma

C30B 35/00 Apparatus in general, specially adapted for the growth, production or after-treatment of single crystals or a homogeneous polycrystalline material with defined structure

C30B 35/002 ・{Crucibles or containers}

C30B 35/005 ・{Transport systems}

C30B 35/007 ・{Apparatus for preparing, pre-treating the source material tio be used for crystal growth}