WebCPC CPC COOPERATIVE PATENT CLASSIFICATION

H03B　GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS (measuring, testing G01R; generators adapted for electrophonic musical instruments G10H; Speech synthesis G10L; masers, lasers H01S; dynamo-electric machines H02K; power inverter circuits H02M; by using pulse techniques H03K; automatic control of generators H03L; starting, synchronisation or stabilisation of generators where the type of generator is irrelevant or unspecified H03L; generation of oscillations in plasma H05H)

H03B 1/00 Details

H03B 1/02 ・Structural details of power oscillators, e.g. for heating {(construction of transmitters H04B; features of generators for heating by electromagnetic fields H05B 6/00)}

H03B 1/04 ・Reducing undesired oscillations, e.g. harmonics

H03B 5/00 Generation of oscillations using amplifier with regenerative feedback from output to input (H03B 9/00, H03B 15/00 take precedence)

H03B 5/02 ・Details

H03B 5/04 ・・Modifications of generator to compensate for variations in physical values, e.g. power supply, load, temperature

H03B 5/06 ・・Modifications of generator to ensure starting of oscillations

H03B 5/08 ・with frequency-determining element comprising lumped inductance and capacitance

H03B 5/10 ・・active element in amplifier being vacuum tube (H03B 5/14 takes precedence)

H03B 5/12 ・・active element in amplifier being semiconductor device (H03B 5/14 takes precedence)

H03B 5/1203 ・・・{the amplifier being a single transistor}

H03B 5/1206 ・・・{using multiple transistors for amplification}

H03B 5/1209 ・・・・{the amplifier having two current paths operating in a differential manner and a current source or degeneration circuit in common to both paths e.g. a long-tailed pair. (H03B 5/1215 takes precedence)}

H03B 5/1212 ・・・・{the amplifier comprising a pair of transistors, wherein an output terminal of each being connected to an input terminal of the other, e.g. a cross coupled pair}

H03B 5/1215 ・・・・・{the current source or degeneration circuit being in common to both transistors of the pair, e.g. a cross-coupled long-tailed pair}

H03B 5/1218 ・・・・{the generator being of the balanced type}

H03B 5/1221 ・・・・{the amplifier comprising multiple amplification stages connected in cascade}

H03B 5/1225 ・・・・{the generator comprising multiple amplifiers connected in parallel}

H03B 5/1228 ・・・{the amplifier comprising one or more field effect transistors}

H03B 5/1231 ・・・{the amplifier comprising one or more bipolar transistors}

H03B 5/1234 ・・・{and comprising means for varying the output amplitude of the generator (H03B 5/1278 takes precedence)}

H03B 5/1237 ・・・{comprising means for varying the frequency of the generator}

H03B 5/124 ・・・・{the means comprising a voltage dependent capacitance}

H03B 5/1243 ・・・・・{the means comprising voltage variable capacitance diodes}

H03B 5/1246 ・・・・・{the means comprising transistors used to provide a variable capacitance}

H03B 5/125 ・・・・・・{the transistors being bipolar transistors}

H03B 5/1253 ・・・・・・{the transistors being field-effect transistors}

H03B 5/1256 ・・・・{the means comprising a variable inductance}

H03B 5/1259 ・・・・・{the means comprising a variable active inductor e.g. gyrator circuits}

H03B 5/1262 ・・・・{the means comprising switched elements}

H03B 5/1265 ・・・・・{switched capacitors}

H03B 5/1268 ・・・・・{switched inductors}

H03B 5/1271 ・・・・{the frequency being controlled by a control current i.e. current controlled oscillators}

H03B 5/1275 ・・・・{having further means for varying a parameter in dependence on the frequency}

H03B 5/1278 ・・・・・{the parameter being an amplitude of a signal, e.g. maintaining a constant output amplitude over the frequency range}

H03B 5/1281 ・・・・・{the parameter being the amount of feedback}

H03B 5/1284 ・・・・・{the parameter being another frequency, e.g. a harmonic of the oscillating frequency}

H03B 5/1287 ・・・・・{the parameter being a quality factor, e.g. Q factor of the frequency determining element}

H03B 5/129 ・・・・・{the parameter being a bias voltage or a power supply}

H03B 5/1293 ・・・・{having means for achieving a desired tuning characteristic e.g. linearising the frequency characteristic across the tuning voltage range }

H03B 5/1296 ・・・{the feedback circuit comprising a transformer}

H03B 5/14 ・・frequency-determining element connected via bridge circuit to closed ring around which signal is transmitted

H03B 5/16 ・・・active element in amplifier being vacuum tube

H03B 5/18 ・with frequency-determining element comprising distributed inductance and capacitance

H03B 5/1805 ・・{the frequency-determining element being a coaxial resonator}

H03B 5/1811 ・・・{the active element in the amplifier being a vacuum tube (see provisionally also H03B 5/1835)}

H03B 5/1817 ・・{the frequency-determining element being a cavity resonator}

H03B 5/1823 ・・・{the active element in the amplifier being a semiconductor device}

H03B 5/1829 ・・・・{the semiconductor device being a field-effect device}

H03B 5/1835 ・・・{the active element in the amplifier being a vacuum tube}

H03B 5/1841 ・・{the frequency-determining element being a strip line resonator (H03B 5/1805, H03B 5/1817, H03B 5/1864 and H03B 5/1882 take precedence)}

H03B 5/1847 ・・・{the active element in the amplifier being a semiconductor device}

H03B 5/1852 ・・・・{the semiconductor device being a field-effect device}

H03B 5/1858 ・・・{the active element in the amplifier being a vacuum tube (see provisionally also H03B 5/1835)}

H03B 5/1864 ・・{the frequency-determining element being a dielectric resonator}

H03B 5/187 ・・・{the active element in the amplifier being a semiconductor device}

H03B 5/1876 ・・・・{the semiconductor device being a field-effect device}

H03B 5/1882 ・・{the frequency-determining element being a magnetic-field sensitive resonator, e.g. a Yttrium Iron Garnet or a magnetostatic surface wave resonator}

H03B 5/1888 ・・・{the active element in the amplifier being a semiconductor device}

H03B 5/1894 ・・・・{the semiconductor device being a field-effect device}

H03B 5/20 ・with frequency-determining element comprising resistance and either capacitance or inductance, e.g. phase-shift oscillator

H03B 5/22 ・・active element in amplifier being vacuum tube (H03B 5/26 takes precedence)

H03B 5/24 ・・active element in amplifier being semiconductor device (H03B 5/26 takes precedence)

H03B 5/26 ・・frequency-determining element being part of bridge circuit in closed ring around which signal is transmitted; frequency-determining element being connected via a bridge circuit to such a closed ring, e.g. Wien-Bridge oscillator, parallel-T oscillator

H03B 5/28 ・・・active element in amplifier being vacuum tube

H03B 5/30 ・with frequency-determining element being electromechanical resonator

H03B 5/32 ・・being a piezo-electric resonator (selection of piezo-electric material H01L 41/00)

H03B 5/323 ・・・{the resonator having more than two terminals (H03B 5/326 takes precedence)}

H03B 5/326 ・・・{the resonator being an acoustic wave device, e.g. SAW or BAW device}

H03B 5/34 ・・・active element in amplifier being vacuum tube (H03B 5/38 takes precedence)

H03B 5/36 ・・・active element in amplifier being semiconductor device ({H03B 5/323, H03B 5/326}, H03B 5/38 take precedence)

H03B 5/362 ・・・・{the amplifier being a single transistor (H03B 5/364 to H03B 5/368 take precedence)}

H03B 5/364 ・・・・{the amplifier comprising field effect transistors (H03B 5/366 takes precedence)}

H03B 5/366 ・・・・{and comprising means for varying the frequency by a variable voltage or current}

H03B 5/368 ・・・・・{the means being voltage variable capacitance diodes}

H03B 5/38 ・・・frequency-determining element being connected via bridge circuit to closed ring around which signal is transmitted

H03B 5/40 ・・being a magnetostrictive resonator (H03B 5/42 takes precedence; selection of magneto-strictive material {H01F 1/00}; H01L 41/00)

H03B 5/42 ・・frequency-determining element connected via bridge circuit to closed ring around which signal is transmitted

H03B 7/00 Generation of oscillations using active element having a negative resistance between two of its electrodes (H03B 9/00 takes precedence)

H03B 7/02 ・with frequency-determining element comprising lumped inductance and capacitance

H03B 7/04 ・・active element being vacuum tube

H03B 7/06 ・・active element being semiconductor device

H03B 7/08 ・・・being a tunnel diode

H03B 7/10 ・・active element being gas-discharge or arc-discharge tube

H03B 7/12 ・with frequency-determining element comprising distributed inductance and capacitance

H03B 7/14 ・・active element being semiconductor device

H03B 7/143 ・・・{and which comprises an element depending on a voltage or a magnetic field, e.g. varactor- YIG}

H03B 7/146 ・・・{with several semiconductor devices}

H03B 9/00 Generation of oscillations using transit-time effects {(construction of tube and circuit arrangements not adapted to a particular application H01J; construction of the semiconductor devices H01L)}

H03B 9/01 ・using discharge tubes

H03B 9/02 ・・using a retarding-field tube (using klystrons H03B 9/04)

H03B 9/04 ・・using a klystron

H03B 9/06 ・・・using a reflex klystron

H03B 9/08 ・・using a travelling-wave tube

H03B 9/10 ・・using a magnetron

H03B 9/12 ・using solid state devices, e.g. Gunn-effect devices

H03B 9/14 ・・and elements comprising distributed inductance and capacitance

H03B 9/141 ・・・{and comprising a voltage sensitive element, e.g. varactor}

H03B 9/142 ・・・{and comprising a magnetic field sensitive element, e.g. YIG}

H03B 9/143 ・・・{using more than one solid state device}

H03B 9/145 ・・・{the frequency being determined by a cavity resonator, e.g. a hollow waveguide cavity or a coaxial cavity (H03B 9/141 to H03B 9/143, H03B 9/147, H03B 9/148 take precedence)}

H03B 9/146 ・・・・{formed by a disc, e.g. a waveguide cap resonator}

H03B 9/147 ・・・{the frequency being determined by a stripline resonator (H03B 9/141 to H03B 9/143, H03B 9/148 take precedence)}

H03B 9/148 ・・・{the frequency being determined by a dielectric resonator (H03B 9/141 to H03B 9/143 take precedence)}

H03B 11/00 Generation of oscillations using a shock-excited tuned circuit (with feedback H03B 5/00)

H03B 11/02 ・excited by spark (spark gaps therefor H01T 9/00)

H03B 11/04 ・excited by interrupter

H03B 11/06 ・・by mechanical interrupter

H03B 11/08 ・・interrupter being discharge tube

H03B 11/10 ・・interrupter being semiconductor device

H03B 13/00 Generation of oscillations using deflection of electron beam in a cathode-ray tube

H03B 15/00 Generation of oscillations using galvano-magnetic devices, e.g. Hall-effect devices, or using super-conductivity effects (galvano-magnetic devices per se H01L 43/00)

H03B 15/003 ・{using superconductivity effects (devices using superconductivity H01L 39/00)}

H03B 15/006 ・{using spin transfer effects or giant magnetoresistance}

H03B 17/00 Generation of oscillations using radiation source and detector, e.g. with interposed variable obturator

H03B 19/00 Generation of oscillations by non-regenerative frequency multiplication or division of a signal from a separate source (transference of modulation from one carrier to another H03D 7/00)

H03B 19/03 ・using non-linear inductance

H03B 19/05 ・using non-linear capacitance, e.g. varactor diodes

H03B 19/06 ・by means of discharge device or semiconductor device with more than two electrodes

H03B 19/08 ・・by means of a discharge device

H03B 19/10 ・・・using multiplication only

H03B 19/12 ・・・using division only

H03B 19/14 ・・by means of a semiconductor device

H03B 19/16 ・using uncontrolled rectifying devices, e.g. rectifying diodes or Schottky diodes

H03B 19/18 ・・and elements comprising distributed inductance and capacitance

H03B 19/20 ・・being diodes exhibiting charge storage or enhancement effects

H03B 21/00 Generation of oscillations by combining unmodulated signals of different frequencies (H03B 19/00 takes precedence; frequency changing circuits in general H03D)

H03B 21/01 ・by beating unmodulated signals of different frequencies

H03B 21/02 ・・by plural beating, i.e. for frequency synthesis; {Beating in combination with multiplication or division of frequency (digital frequency synthesis using a ROM G06F 1/02; digital frequency synthesis in general H03K; indirect frequency synthesis using a PLL H03L 7/16)}

H03B 21/025 ・・・{by repeated mixing in combination with division of frequency only}

H03B 21/04 ・・・using several similar stages

H03B 23/00 Generation of oscillations periodically swept over a predetermined frequency range (angle-modulating circuits in general H03C 3/00)

H03B 25/00 Simultaneous generation by a free-running oscillator of oscillations having different frequencies

H03B 27/00 Generation of oscillations providing a plurality of outputs of the same frequency but differing in phase, other than merely two anti-phase outputs

H03B 28/00 Generation of oscillations by methods not covered by groups H03B 5/00 to H03B 27/00, including modification of the waveform to produce sinusoidal oscillations (analogue function generators for performing computing operations G06G 7/26; use of transformers for conversion of waveform in ac-ac converters H02M 5/18)

H03B 29/00 Generation of noise currents and voltages {(gasfilled discharge tubes with solid cathode specially adapted as noise generators H01J 17/005)}

H03B 2009/00 Generation of oscillations using transit-time effects {(construction of tube and circuit arrangements not adapted to a particular application H01J; construction of the semiconductor devices H01L)}

H03B 2009/12 ・using solid state devices, e.g. Gunn-effect devices

H03B 2009/123 ・・using Gunn diodes

H03B 2009/126 ・・using impact ionization avalanche transit time (IMPATT) diodes

H03B 2200/00 Indexing scheme relating to details of oscillators covered by H03B

H03B 2200/0002 ・Types of oscillators

H03B 2200/0004 ・・Butler oscillator

H03B 2200/0006 ・・Clapp oscillator

H03B 2200/0008 ・・Colpitts oscillator

H03B 2200/001 ・・Hartley oscillator

H03B 2200/0012 ・・Pierce oscillator

H03B 2200/0014 ・Structural aspects of oscillators

H03B 2200/0016 ・・including a ring, disk or loop shaped resonator

H03B 2200/0018 ・・relating to the cutting angle of a crystal, e.g. AT cut quartz

H03B 2200/002 ・・making use of ceramic material

H03B 2200/0022 ・・characterised by the substrate, e.g. material

H03B 2200/0024 ・・including parallel striplines

H03B 2200/0026 ・・relating to the pins of integrated circuits

H03B 2200/0028 ・・based on a monolithic microwave integrated circuit (MMIC)

H03B 2200/003 ・Circuit elements of oscillators

H03B 2200/0032 ・・including a device with a Schottky junction

H03B 2200/0034 ・・including a buffer amplifier

H03B 2200/0036 ・・including an emitter or source coupled transistor pair or a long tail pair

H03B 2200/0038 ・・including a current mirror

H03B 2200/004 ・・including a variable capacitance, e.g. a varicap, a varactor or a variable capacitance of a diode or transistor

H03B 2200/0042 ・・・the capacitance diode being in the feedback path

H03B 2200/0044 ・・including optical elements e.g. optical injection locking

H03B 2200/0046 ・・including measures to switch the gain of an amplifier

H03B 2200/0048 ・・including measures to switch the frequency band, e.g. by harmonic selection

H03B 2200/005 ・・including measures to switch a capacitor

H03B 2200/0052 ・・including measures to switch the feedback circuit

H03B 2200/0054 ・・including measures to switch a filter, e.g. for frequency tuning or for harmonic selection

H03B 2200/0056 ・・including a diode used for switching

H03B 2200/0058 ・・with particular transconductance characteristics, e.g. an operational transconductance amplifier

H03B 2200/006 ・Functional aspects of oscillators

H03B 2200/0062 ・・Bias and operating point

H03B 2200/0064 ・・Pulse width, duty cycle or on/off ratio

H03B 2200/0066 ・・Amplitude or AM detection

H03B 2200/0068 ・・Frequency or FM detection

H03B 2200/007 ・・Generation of oscillations based on harmonic frequencies, e.g. overtone oscillators

H03B 2200/0072 ・・Frequency hopping and enabling of rapid frequency changes

H03B 2200/0074 ・・Locking of an oscillator by injecting an input signal directly into the oscillator

H03B 2200/0076 ・・Power combination of several oscillators oscillating at the same frequency

H03B 2200/0078 ・・generating or using signals in quadrature

H03B 2200/008 ・・making use of a reference frequency

H03B 2200/0082 ・・Lowering the supply voltage and saving power

H03B 2200/0084 ・・dedicated to Terahertz frequencies

H03B 2200/0086 ・・relating to the Q factor or damping of the resonant circuit

H03B 2200/0088 ・・Reduction of noise

H03B 2200/009 ・・・Reduction of phase noise

H03B 2200/0092 ・・Measures to linearise or reduce distortion of oscillator characteristics

H03B 2200/0094 ・・Measures to ensure starting of oscillations

H03B 2200/0096 ・・Measures to ensure stopping of oscillations

H03B 2200/0098 ・・having a balanced output signal

H03B 2201/00 Aspects of oscillators relating to varying the frequency of the oscillations

H03B 2201/01 ・Varying the frequency of the oscillations by manual means

H03B 2201/011 ・・the means being an element with a variable capacitance

H03B 2201/012 ・・the means being an element with a variable inductance

H03B 2201/014 ・・the means being associated with an element comprising distributed inductances and capacitances

H03B 2201/015 ・・・the element being a cavity

H03B 2201/017 ・・・the element being a dielectric resonator

H03B 2201/018 ・・the means being a manual switch

H03B 2201/02 ・Varying the frequency of the oscillations by electronic means

H03B 2201/0208 ・・the means being an element with a variable capacitance, e.g. capacitance diode

H03B 2201/0216 ・・the means being an element with a variable inductance

H03B 2201/0225 ・・the means being associated with an element comprising distributed inductances and capacitances

H03B 2201/0233 ・・・the element being a cavity

H03B 2201/0241 ・・・the element being a magnetically variable element, e.g. an Yttrium Iron Garnet

H03B 2201/025 ・・the means being an electronic switch for switching in or out oscillator elements

H03B 2201/0258 ・・・the means comprising a diode

H03B 2201/0266 ・・・the means comprising a transistor

H03B 2201/0275 ・・the means delivering several selected voltages or currents

H03B 2201/0283 ・・・the means functioning digitally

H03B 2201/0291 ・・・・and being controlled by a processing device, e.g. a microprocessor

H03B 2201/03 ・Varying beside the frequency also another parameter of the oscillator in dependence on the frequency

H03B 2201/031 ・・the parameter being the amplitude of a signal, e.g. maintaining a constant output amplitude over the frequency range

H03B 2201/033 ・・the parameter being the amount of feedback

H03B 2201/035 ・・the parameter being another frequency, e.g. a harmonic of the oscillating frequency

H03B 2201/036 ・・the parameter being the quality factor of a resonator

H03B 2201/038 ・・the parameter being a bias voltage or a power supply

H03B 2202/00 Aspects of oscillators relating to reduction of undesired oscillations

H03B 2202/01 ・Reduction of undesired oscillations originated from distortion in one of the circuit elements of the oscillator

H03B 2202/012 ・・the circuit element being the active device

H03B 2202/015 ・・the circuit element being a limiter

H03B 2202/017 ・・the circuit element being a frequency determining element

H03B 2202/02 ・Reduction of undesired oscillations originated from natural noise of the circuit elements of the oscillator

H03B 2202/022 ・・the noise being essentially white noise, i.e. frequency independent noise

H03B 2202/025 ・・the noise being coloured noise, i.e. frequency dependent noise

H03B 2202/027 ・・・the noise being essentially proportional to the inverse of the frequency, i.e. the so-called 1/f noise

H03B 2202/03 ・Reduction of undesired oscillations originated from internal parasitic couplings, i.e. parasitic couplings within the oscillator itself

H03B 2202/04 ・Reduction of undesired oscillations originated from outside noise or interferences, e.g. from parasitic couplings with circuit elements outside the oscillator

H03B 2202/042 ・・the circuit element belonging to the power supply

H03B 2202/044 ・・the circuit element belonging to transmitter circuitry

H03B 2202/046 ・・the circuit element belonging to receiver circuitry

H03B 2202/048 ・・the circuit element being a frequency divider

H03B 2202/05 ・Reduction of undesired oscillations through filtering or through special resonator characteristics

H03B 2202/06 ・Reduction of undesired oscillations through modification of a bias voltage, e.g. selecting the operation point of an active device

H03B 2202/07 ・Reduction of undesired oscillations through a cancelling of the undesired oscillation

H03B 2202/073 ・・by modifying the internal feedback of the oscillator

H03B 2202/076 ・・by using a feedback loop external to the oscillator, e.g. the so-called noise degeneration

H03B 2202/08 ・Reduction of undesired oscillations originated from the oscillator in circuit elements external to the oscillator by means associated with the oscillator

H03B 2202/082 ・・by avoiding coupling between these circuit elements

H03B 2202/084 ・・・through shielding

H03B 2202/086 ・・・through a frequency dependent coupling, e.g. which attenuates a certain frequency range

H03B 2202/088 ・・by compensating through additional couplings with these circuit elements