WebCPC CPC COOPERATIVE PATENT CLASSIFICATION

B81C　PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICRO-STRUCTURAL DEVICES OR SYSTEMS (making microcapsules or microballoons B01J 13/02; processes or apparatus peculiar to the manufacture or treatment of piezo-electric, electrostrictive or magnetostrictive element per se H01L 41/22)

B81C 1/00 Manufacture or treatment of devices or systems in or on a substrate (B81C 3/00 takes precedence)

B81C 1/00007 ・{Assembling automatically hinged components, i.e. self-assembly processes (self-assembly mechanisms B81B 7/0003)}

B81C 1/00015 ・{for manufacturing micro-systems}

B81C 1/00023 ・・{without movable or flexible elements (array of static structures for functionalising surfaces in B81C 1/00206; manufacture of MEMS devices for specific applications, see relevant places, e.g. microreactors B01J 19/0093, lab-on-chip B01L 3/00C6M, micromixers B01F 13/0059)}

B81C 1/00031 ・・・{Regular or irregular arrays of nanoscale structures, e.g. etch mask layer (photomechanical, e.g. photolithographic, production of textured or patterned surfaces G03F 7/00; lithographic processes for making patterned surfaces using printing and stamping G03F 7/0002)}

B81C 1/00039 ・・・{Anchors}

B81C 1/00047 ・・・{Cavities}

B81C 1/00055 ・・・{Grooves}

B81C 1/00063 ・・・・{Trenches}

B81C 1/00071 ・・・・{Channels}

B81C 1/00079 ・・・・{Grooves not provided for in groups B81C 1/00063 to B81C 1/00071}

B81C 1/00087 ・・・{Holes}

B81C 1/00095 ・・・{Interconnects}

B81C 1/00103 ・・・{Structures having a predefined profile, e.g. sloped or rounded grooves}

B81C 1/00111 ・・・{Tips, pillars, i.e. raised structures (microneedles A61M 37/0015)}

B81C 1/00119 ・・・{Arrangement of basic structures like cavities or channels, e.g. suitable for microfluidic systems}

B81C 1/00126 ・・・{Static structures not provided for in groups B81C 1/00031 to B81C 1/00119}

B81C 1/00134 ・・{comprising flexible or deformable structures (manufacture of MEMS devices for specific applications, see relevant places, e.g. gyroscopes G01C 19/56G1, pressure sensors G01L 9/0042, accelerometers G01P 15/0802, acoustic transducers or diaphragms therefor H04R31)}

B81C 1/00142 ・・・[Bridges (deformable micro-mirrors G02B 26/0841)]

B81C 1/0015 ・・・[Cantilevers (switches using MEMS H01H 1/0036; electrostatic relays using micromechanics H01H 59/0009; micro-electro-mechanical resonators H03H 9/02244)]

B81C 1/00158 ・・・[Diaphragms, membranes (manufacture process for semi-permeable inorganic membranes B01D 67/0039)]

B81C 1/00166 ・・・{Electrodes}

B81C 1/00174 ・・・{See-saws}

B81C 1/00182 ・・・{Arrangements of deformable or non-deformable structures, e.g. membrane and cavity for use in a transducer}

B81C 1/0019 ・・・{Flexible or deformable structures not provided for in groups B81C 1/00142 to B81C 1/00182}

B81C 1/00198 ・・{comprising elements which are movable in relation to each other, e.g. comprising slidable or rotatable elements}

B81C 1/00206 ・・{Processes for functionalising a surface, e.g. provide the surface with specific mechanical, chemical or biological properties}

B81C 1/00214 ・・{Processes for the simultaneaous manufacturing of a network or an array of similar micro-structural devices}

B81C 1/00222 ・・{Integrating an electronic processing unit with a micromechanical structure}

B81C 1/0023 ・・・{Packaging together an electronic processing unit die and a micromechanical structure die (MEMS packages B81B 7/0032; MEMS packaging processes B81C 1/00261)}

B81C 1/00238 ・・・{Joining a substrate with an electronic processing unit and a substrate with a micromechanical structure}

B81C 1/00246 ・・・{Monolithic integration, i.e. micromechanical structure and electronic processing unit are integrated on the same substrate}

B81C 1/00253 ・・・{Processes for integrating an electronic processing unit with a micromechanical structure not provided for in B81C 1/0023 to B81C 1/00246}

B81C 1/00261 ・・{Processes for packaging MEMS devices (MEMS packages B81B 7/00P, packaging of smart-MEMS B81C 1/0023)}

B81C 1/00269 ・・・{Bonding of solid lids or wafers to the substrate}

B81C 1/00277 ・・・{for maintaining a controlled atmosphere inside of the cavity containing the MEMS}

B81C 1/00285 ・・・・{using materials for controlling the level of pressure, contaminants or moisture inside of the package, e.g. getters}

B81C 1/00293 ・・・・{maintaining a controlled atmosphere with processes not provided for in B81C 1/00285}

B81C 1/00301 ・・・{Connecting electric signal lines from the MEMS device with external electrical signal lines, e.g. through vias}

B81C 1/00309 ・・・{suitable for fluid transfer from the MEMS out of the package or vice-versa, e.g. transfer of liquid, gas, sound}

B81C 1/00317 ・・・{Packaging optical devices}

B81C 1/00325 ・・・{for reducing stress inside of the package structure}

B81C 1/00333 ・・・{Aspects relating to packaging of MEMS devices, not covered by groups B81C 1/00269 to B81C 1/00325}

B81C 1/00341 ・・{Processes for manufacturing micro-systems not provided for in groups B81C 1/00023 to B81C 1/00261}

B81C 1/00349 ・{Creating layers of material on a substrate}

B81C 1/00357 ・・{involving bonding one or several substrates on a non-temporary support, e.g. another substrate}

B81C 1/00365 ・・{having low tensile stress between layers}

B81C 1/00373 ・・{Selective deposition, e.g. printing or micro-contact printing}

B81C 1/0038 ・・{Processes for creating layers of materials not provided for in groups B81C 1/00357 to B81C 1/00373}

B81C 1/00388 ・{Etch mask forming}

B81C 1/00396 ・・{Mask characterised by its composition, e.g. multilayer masks}

B81C 1/00404 ・・{Mask characterised by its size, orientation or shape}

B81C 1/00412 ・・{Mask characterised by its behaviour during the etching process, e.g. soluble masks}

B81C 1/0042 ・・{Compensation masks in orientation dependent etching}

B81C 1/00428 ・・{Etch mask forming processes not provided for in groups B81C 1/00396 to B81C 1/0042}

B81C 1/00436 ・{Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate}

B81C 1/00444 ・・{Surface micromachining, i.e. structuring layers on the substrate}

B81C 1/0046 ・・・{using stamping, e.g. imprinting (nano-imprinting for making etch masks G03F 7/0002)}

B81C 1/00468 ・・・{Releasing structures}

B81C 1/00476 ・・・・{removing a sacrificial layer (B81C 1/00912 takes precedence)}

B81C 1/00484 ・・・・{Processes for releasing structures not provided for in group B81C 1/00476}

B81C 1/00492 ・・・{Processes for surface micromachining not provided for in groups B81C 1/00F2D to B81C 1/00484}

B81C 1/005 ・・{Bulk micromachining}

B81C 1/00507 ・・・{Formation of buried layers by techniques other than deposition, e.g. by deep implantation of elements (SIMOX techniques H01L 21/762)}

B81C 1/00515 ・・・{Bulk micromachining techniques not provided for in B81C 1/00507}

B81C 1/00523 ・・{Etching material}

B81C 1/00531 ・・・{Dry etching}

B81C 1/00539 ・・・{Wet etching}

B81C 1/00547 ・・・{Etching processes not provided for in groups B81C 1/00531 to B81C 1/00F6P}

B81C 1/00555 ・・{Achieving a desired geometry, i.e. controlling etch rates, anisotropy or selectivity (B81C 1/00023 to B81C 1/0019 take precedence)}

B81C 1/00563 ・・・{Avoid or control over-etching}

B81C 1/00571 ・・・・{Avoid or control under-cutting}

B81C 1/00579 ・・・・{Avoid charge built-up}

B81C 1/00587 ・・・・{Processes for avoiding or controlling over-etching not provided for in B81C 1/00571 to B81C 1/00579}

B81C 1/00595 ・・・{Control etch selectivity}

B81C 1/00603 ・・・{Aligning features and geometries on both sides of a substrate, e.g. when double side etching}

B81C 1/00611 ・・・{Processes for the planarisation of structures (planarising depositions C23C, H01L)}

B81C 1/00619 ・・・{Forming high aspect ratio structures having deep steep walls}

B81C 1/00626 ・・・{Processes for achieving a desired geometry not provided for in groups B81C 1/00563 to B81C 1/00619}

B81C 1/00634 ・・{Processes for shaping materials not provided for in groups B81C 1/00444 to B81C 1/00626}

B81C 1/00642 ・{for improving the physical properties of a device}

B81C 1/0065 ・・{Mechanical properties}

B81C 1/00658 ・・・{Treatments for improving the stiffness of a vibrating element}

B81C 1/00666 ・・・{Treatments for controlling internal stress or strain in MEMS structures}

B81C 1/00674 ・・・{Treatments for improving wear resistance}

B81C 1/00682 ・・・{Treatments for improving mechanical properties, not provided for in B81C 1/00658 to B81C 1/0065}

B81C 1/0069 ・・{Thermal properties, e.g. improve thermal insulation}

B81C 1/00698 ・・{Electrical characteristics, e.g. by doping materials}

B81C 1/00706 ・・{Magnetic properties}

B81C 1/00714 ・・{Treatment for improving the physical properties not provided for in groups B81C 1/0065 to B81C 1/00706}

B81C 1/00777 ・{Preserve existing structures from alteration, e.g. temporary protection during manufacturing}

B81C 1/00785 ・・{Avoid chemical alteration, e.g. contamination, oxidation or unwanted etching (B81C 1/00563 to B81C 1/00595 take precedence)}

B81C 1/00793 ・・・{Avoid contamination, e.g. absorption of impurities or oxidation}

B81C 1/00801 ・・・{Avoid alteration of functional structures by etching, e.g. using a passivation layer or an etch stop layer (B81C 1/00595, B81C 1/00468 take precedence)}

B81C 1/00809 ・・・{Methods to avoid chemical alteration not provided for in groups B81C 1/00793 to B81C 1/00801}

B81C 1/00817 ・・{Avoid thermal destruction}

B81C 1/00825 ・・{Protect against mechanical threats, e.g. against shocks, or residues (B81C 1/00261 take precedence)}

B81C 1/00833 ・・{Methods for preserving structures not provided for in groups B81C 1/00785 to B81C 1/00825}

B81C 1/00841 ・{Cleaning during or after manufacture (cleaning of semiconductor devices H01L 21/306)}

B81C 1/00849 ・・{during manufacture}

B81C 1/00857 ・・{after manufacture, e.g. back-end of the line process}

B81C 1/00865 ・{Multistep processes for the separation of wafers into individual elements}

B81C 1/00873 ・・{characterised by special arrangements of the devices, allowing an easier separation}

B81C 1/0088 ・・{Separation allowing recovery of the substrate or a part of the substrate, e.g. epitaxial lift-off}

B81C 1/00888 ・・{Multistep processes involving only mechanical separation, e.g. grooving followed by cleaving}

B81C 1/00896 ・・{Temporary protection during separation into individual elements}

B81C 1/00904 ・・{Multistep processes for the separation of wafers into individual elements not provided for in groups B81C 1/00873 to B81C 1/00896}

B81C 1/00912 ・{Treatments or methods for avoiding stiction of flexible or moving parts of MEMS}

B81C 1/0092 ・・{For avoiding stiction during the manufacturing process of the device, e.g. during wet etching}

B81C 1/00928 ・・・{Eliminating or avoiding remaining moisture after the wet etch release of the movable structure}

B81C 1/00936 ・・・{Releasing the movable structure without liquid etchant}

B81C 1/00944 ・・・{Maintaining a critical distance between the structures to be released}

B81C 1/00952 ・・・{Treatments or methods for avoiding stiction during the manufacturing process not provided for in groups B81C 1/00928 to B81C 1/00944}

B81C 1/0096 ・・{For avoiding stiction when the device is in use, i.e. after manufacture has been completed}

B81C 1/00968 ・・・{Methods for breaking the stiction bond}

B81C 1/00976 ・・・{Control methods for avoiding stiction, e.g. controlling the bias voltage}

B81C 1/00984 ・・・{Methods for avoiding stiction when the device is in use not provided for in groups B81C 1/00968 to B81C 1/00976}

B81C 1/00992 ・・{Treatments or methods for avoiding stiction of flexible or moving parts of MEMS not provided for in groups B81C 1/0092 to B81C 1/00984}

B81C 3/00 Assembling of devices or systems from individually processed components

B81C 3/001 ・{Bonding of two components}

B81C 3/002 ・{Aligning micro-parts}

B81C 3/004 ・・{Active alignment, i.e. moving the elements in response to the detected position of the elements using internal or external actuators}

B81C 3/005 ・・{Passive alignment, i.e. without a detection of the position of the elements or using only structural arrangements or thermodynamic forces}

B81C 3/007 ・・{Methods for aligning micro-parts not provided for in groups B81C 3/004 to B81C 3/005}

B81C 3/008 ・{Aspects related to assembling from individually processed components, not covered by groups B81C 3/001 to B81C 3/002}

B81C 99/00 Subject matter not provided for in other groups of this subclass

B81C 99/0005 ・{Apparatus specially adapted for the manufacture or treatment of micro-structural devices or systems, or methods for manufacturing the same}

B81C 99/001 ・・{for cutting, cleaving or grinding}

B81C 99/0015 ・・{for micro extrusion (extrusion heads in general B29C 47/12)}

B81C 99/002 ・・{Apparatus for assembling MEMS, e.g. micro-manipulators (micro-manipulators per se B25J 7/00)}

B81C 99/0025 ・・{Apparatus specially adapted for the manufacture or treatment of micro-structural devices or systems not provided for in B81C 99/001 to B81C 99/002}

B81C 99/003 ・{Characterising MEMS devices, e.g. measuring and identifying electrical or mechanical constants}

B81C 99/0035 ・{Testing}

B81C 99/004 ・・{during manufacturing}

B81C 99/0045 ・・{End test of the packaged device}

B81C 99/005 ・・{Test apparatus}

B81C 99/0055 ・{Manufacturing logistics}

B81C 99/006 ・・{Design; Simulation}

B81C 99/0065 ・・{Process control; Yield prediction}

B81C 99/007 ・・{Marking}

B81C 99/0075 ・{Manufacture of substrate-free structures}

B81C 99/008 ・・{separating the processed structure from a mother substrate}

B81C 99/0085 ・・{using moulds and master templates, e.g. for hot-embossing}

B81C 99/009 ・・{Manufacturing the stamps or the moulds}

B81C 99/0095 ・・{Aspects relating to the manufacture of substrate-free structures, not covered by groups B81C 99/008 to B81C 99/009}

B81C 2001/00 Manufacture or treatment of devices or systems in or on a substrate (B81C 3/00 takes precedence)

B81C 2001/00436 ・{Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate}

B81C 2001/00444 ・・{Surface micromachining, i.e. structuring layers on the substrate}

B81C 2001/00452 ・・・involving subtractive techniques other than etching

B81C 2001/00722 ・{Multistep processes for the planarisation of structures (planarising depositions C23C, H01L)}

B81C 2001/0073 ・・{involving only addition of materials, i.e. additive planarisation}

B81C 2001/00738 ・・・{Selective addition}

B81C 2001/00746 ・・{involving addition of material followed by removal of parts of said material, i.e. substractive planarisation}

B81C 2001/00753 ・・・{the addition of material being a selective deposition}

B81C 2001/00761 ・・・{Blanket removal, e.g. polishing}

B81C 2001/00769 ・・・{Selective removal}

B81C 2201/00 Manufacture or treatment of micro-structural devices or systems

B81C 2201/01 ・in or on a substrate

B81C 2201/0101 ・・Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning

B81C 2201/0102 ・・・Surface micromachining

B81C 2201/0104 ・・・・Chemical-mechanical polishing (CMP)

B81C 2201/0105 ・・・・Sacrificial layer

B81C 2201/0107 ・・・・・Sacrificial metal

B81C 2201/0108 ・・・・・Sacrificial polymer, ashing of organics

B81C 2201/0109 ・・・・・Sacrificial layers not provided for in B81C 2201/0107 to B81C 2201/0108

B81C 2201/0111 ・・・Bulk micromachining

B81C 2201/0112 ・・・・Bosch process

B81C 2201/0114 ・・・・Electrochemical etching, anodic oxidation

B81C 2201/0115 ・・・・Porous silicon

B81C 2201/0116 ・・・・Thermal treatment for structural rearrangement of substrate atoms, e.g. for making buried cavities

B81C 2201/0118 ・・・Processes for the planarization of structures

B81C 2201/0119 ・・・・involving only addition of materials, i.e. additive planarization

B81C 2201/0121 ・・・・involving addition of material followed by removal of parts of said material, i.e. subtractive planarization

B81C 2201/0122 ・・・・Selective addition

B81C 2201/0123 ・・・・Selective removal

B81C 2201/0125 ・・・・Blanket removal, e.g. polishing

B81C 2201/0126 ・・・・Processes for the planarization of structures not provided for in B81C 2201/0119 to B81C 2201/0125

B81C 2201/0128 ・・・Processes for removing material

B81C 2201/0129 ・・・・Diamond turning

B81C 2201/013 ・・・・Etching

B81C 2201/0132 ・・・・・Dry etching, i.e. plasma etching, barrel etching, reactive ion etching (RIE), sputter etching or ion milling

B81C 2201/0133 ・・・・・Wet etching

B81C 2201/0135 ・・・・・Controlling etch progression

B81C 2201/0136 ・・・・・・by doping limited material regions

B81C 2201/0138 ・・・・・・Monitoring physical parameters in the etching chamber, e.g. pressure, temperature or gas composition

B81C 2201/0139 ・・・・・・with the electric potential of an electrochemical etching

B81C 2201/014 ・・・・・・by depositing an etch stop layer, e.g. silicon nitride, silicon oxide, metal

B81C 2201/0142 ・・・・・・Processes for controlling etch progression not provided for in B81C 2201/0136 to B81C 2201/014

B81C 2201/0143 ・・・・Focussed beam, i.e. laser, ion or e-beam

B81C 2201/0145 ・・・・Spark erosion

B81C 2201/0146 ・・・・Processes for removing material not provided for in B81C 2201/0129 to B81C 2201/0145

B81C 2201/0147 ・・・Film patterning

B81C 2201/0149 ・・・・Forming nanoscale microstructures using auto-arranging or self-assembling material

B81C 2201/015 ・・・・Imprinting

B81C 2201/0152 ・・・・・Step and Flash imprinting, UV imprinting

B81C 2201/0153 ・・・・・Imprinting techniques not provided for in B81C 2201/0152

B81C 2201/0154 ・・・・other processes for film patterning not provided for in B81C 2201/0149 to B81C 2201/015

B81C 2201/0156 ・・・Lithographic techniques

B81C 2201/0157 ・・・・Gray-scale mask technology

B81C 2201/0159 ・・・・Lithographic techniques not provided for in B81C 2201/0157

B81C 2201/016 ・・・Passivation

B81C 2201/0161 ・・Controlling physical properties of the material

B81C 2201/0163 ・・・Controlling internal stress of deposited layers

B81C 2201/0164 ・・・・by doping the layer

B81C 2201/0166 ・・・・by ion implantation

B81C 2201/0167 ・・・・by adding further layers of materials having complementary strains, i.e. compressive or tensile strain

B81C 2201/0169 ・・・・by post-annealing

B81C 2201/017 ・・・・Methods for controlling internal stress of deposited layers not provided for in B81C 2201/0164 to B81C 2201/0169

B81C 2201/0171 ・・・Doping materials

B81C 2201/0173 ・・・・Thermo-migration of impurities from a solid, e.g. from a doped deposited layer

B81C 2201/0174 ・・for making multi-layered devices, film deposition or growing

B81C 2201/0176 ・・・Chemical vapour Deposition

B81C 2201/0177 ・・・・Epitaxy, i.e. homo-epitaxy, hetero-epitaxy, GaAs-epitaxy

B81C 2201/0178 ・・・・Oxidation

B81C 2201/018 ・・・・Plasma polymerization, i.e. monomer or polymer deposition

B81C 2201/0181 ・・・Physical Vapour Deposition (PVD), i.e. evaporation, sputtering, ion plating or plasma assisted deposition, ion cluster beam technology

B81C 2201/0183 ・・・Selective deposition

B81C 2201/0184 ・・・・Digital lithography, e.g. using an inkjet print-head

B81C 2201/0185 ・・・・Printing, e.g. micro contact printing

B81C 2201/0187 ・・・・Controlled formation of micro- or nanostructures using a template positioned on a substrate

B81C 2201/0188 ・・・・Selective deposition techniques not provided for in B81C 2201/0184 to B81C 2201/0187

B81C 2201/019 ・・・Bonding or gluing multiple substrate layers

B81C 2201/0191 ・・・Transfer of a layer from a carrier wafer to a device wafer

B81C 2201/0192 ・・・・by cleaving the carrier wafer

B81C 2201/0194 ・・・・the layer being structured

B81C 2201/0195 ・・・・the layer being unstructured

B81C 2201/0197 ・・・Processes for making multi-layered devices not provided for in groups B81C 2201/0176 to B81C 2201/0192

B81C 2201/0198 ・・for making a masking layer

B81C 2201/03 ・Processes for manufacturing substrate-free structures

B81C 2201/032 ・・LIGA process

B81C 2201/034 ・・Moulding

B81C 2201/036 ・・Hot embossing

B81C 2201/038 ・・Processes for manufacturing substrate-free structures not provided for in B81C 2201/034 to B81C 2201/036

B81C 2201/05 ・Temporary protection of devices or parts of the devices during manufacturing

B81C 2201/053 ・・Depositing a protective layers

B81C 2201/056 ・・Releasing structures at the end of the manufacturing process

B81C 2201/11 ・Treatments for avoiding stiction of elastic or moving parts of MEMS

B81C 2201/112 ・・Depositing an anti-stiction or passivation coating, e.g. on the elastic or moving parts

B81C 2201/115 ・・Roughening a surface

B81C 2201/117 ・・Using supercritical fluid, e.g. carbon dioxide, for removing sacrificial layers

B81C 2203/00 Forming micro-structural systems

B81C 2203/01 ・Packaging MEMS

B81C 2203/0109 ・・Bonding an individual cap on the substrate

B81C 2203/0118 ・・Bonding a wafer on the substrate, i.e. where the cap consists of another wafer

B81C 2203/0127 ・・Using a carrier for applying a plurality of packaging lids to the system wafer

B81C 2203/0136 ・・Growing or depositing of a covering layer

B81C 2203/0145 ・・Hermetically sealing an opening in the lid

B81C 2203/0154 ・・Moulding a cap over the MEMS device

B81C 2203/0163 ・・Reinforcing a cap, e.g. with ribs

B81C 2203/0172 ・・Seals

B81C 2203/0181 ・・・Using micro-heaters for bonding the lid

B81C 2203/019 ・・・characterised by the material or arrangement of seals between parts

B81C 2203/03 ・Bonding two components

B81C 2203/031 ・・Anodic bondings

B81C 2203/032 ・・Gluing

B81C 2203/033 ・・Thermal bonding

B81C 2203/035 ・・・Soldering

B81C 2203/036 ・・・Fusion bonding

B81C 2203/037 ・・・Thermal bonding techniques not provided for in B81C 2203/035 to B81C 2203/036

B81C 2203/038 ・・Bonding techniques not provided for in B81C 2203/031 to L81C 203/03S

B81C 2203/05 ・Aligning components to be assembled

B81C 2203/051 ・・Active alignment, e.g. using internal or external actuators, magnets, sensors, marks or marks detectors

B81C 2203/052 ・・Passive alignment, i.e. using only structural arrangements or thermodynamic forces without an internal or external apparatus

B81C 2203/054 ・・・using structural alignment aids, e.g. spacers, interposers, male/female parts, rods or balls

B81C 2203/055 ・・・using the surface tension of fluid solder to align the elements

B81C 2203/057 ・・・Passive alignment techniques not provided for in B81C 2203/054 to B81C 2203/055

B81C 2203/058 ・・Aligning components using methods not provided for in B81C 2203/051 to B81C 2203/052

B81C 2203/07 ・Integrating an electronic processing unit with a micromechanical structure

B81C 2203/0707 ・・Monolithic integration, i.e. the electronic processing unit is formed on or in the same substrate as the micromechanical structure

B81C 2203/0714 ・・・Forming the micromechanical structure with a CMOS process

B81C 2203/0721 ・・・Forming the micromechanical structure with a low-temperature process (B81C 2203/0735 takes precedence)

B81C 2203/0728 ・・・Pre-CMOS, i.e. forming the micromechanical structure before the CMOS circuit

B81C 2203/0735 ・・・Post-CMOS, i.e. forming the micromechanical structure after the CMOS circuit

B81C 2203/0742 ・・・Interleave, i.e. simultaneously forming the micromechanical structure and the CMOS circuit

B81C 2203/075 ・・・the electronic processing unit being integrated into an element of the micromechanical structure

B81C 2203/0757 ・・・Topology for facilitating the monolithic integration

B81C 2203/0764 ・・・・Forming the micromechanical structure in a groove

B81C 2203/0771 ・・・・Stacking the electronic processing unit and the micromechanical structure

B81C 2203/0778 ・・・・Topology for facilitating the monolithic integration not provided for in B81C 2203/0764 to B81C 2203/0771

B81C 2203/0785 ・・Transfer and j oin technology, i.e. forming the electronic processing unit and the micromechanical structure on separate substrates and joining the substrates

B81C 2203/0792 ・・・Forming interconnections between the electronic processing unit and the micromechanical structure

B81C 2900/00 Apparatus specially adapted for the manufacture or treatment of micro-structural devices or systems

B81C 2900/02 ・Micro extrusion heads