SB060527（変更可能）

SB060527（変更可能）
MicroPatent Login Login name Password MicroPatent Manual Login Temporary Identification Number © 1998 MicroPatent Search scope: US Granted US Applications Years: 1981-2006 Patent/Publication No.: ((US6645885)) or ((US6645785)) or ((US20030210716)) or ((US20030210643)) or ((US20030210633)) 5 patents selected (of 5 matches). Table of Contents 1. US6645885 B2 H01L 20031111 The National University of Singapore Forming indium nitride (InN) and indium gallium nitride (InGaN) quantum dots grown by metal-organic-vapor-phase-epitaxy (MOCVD) 2. US6645785 B2 H01L 20031111 Toyoda Gosei Co., Ltd. Light-emitting semiconductor device using group III nitride compound 3. US20030210716 A1 H01S 20031113 Canon Kabushiki Kaisha Harmonic generator, method for driving harmonic generator, image- displaying apparatus, image-forming apparatus, optical storage apparatus that employs harmonic generator 4. US20030210643 A1 G11B 20031113 FUJI PHOTO FILM CO., LTD. Optical information recording medium 5. US20030210633 A1 G11B 20031113 FUJI PHOTO FILM CO., LTD. Optical information recording method and optical information recording medium1/5 [Back] [Next] [Text/USPTO] [Img,Txt/EPO] [Img/全頁] メール検討依頼書 US6645885 B2金属-有機体の-蒸気-位相-エピタキシ (MOCVD) により成型するインジウム窒化物 (InN) およびインジウム・ガリウム窒化物 (InGaN) 量子ドット成長Forming indium nitride (InN) and indium gallium nitride (InGaN) quantum dots grown by metal-organic-vapor-phase-epitaxy (MOCVD) The National University of Singapore Institute of Materials Research & Engineering Inventor(s):Chua, Soo Jin ;Li, Peng ;Hao, Maosheng ;Zhang, Ji Application No. 09/963616, Filed 20010927, Issued 20031111 US.Class: 438509 257010 257012 257183 257189 257200 257201 257E21108 257E21126 438022 438046 438047 438060 438065 Int'l Class: H01L02120; H01L021205 H01L03300 H01S00534 H01S005343 Abstract: Indium Nitride (InN) and Indium-rich Indium Gallium Nitride (InGaN) quantum dots embedded in single and multiple In x Ga 1-x N/In y Ga 1-y N quantum wells (QWs) are formed by using TMIn and/or Triethylindium (TEIn), Ethyldimethylindium (EDMIn) as antisurfactant during MOCVD growth, wherein the photoluminescence wavelength from these dots ranges from 480 nm to 530 nm. Controlled amounts of TMIn and/or other Indium precursors are important in triggering the formation of dislocation-free QDs, as are the subsequent flows of ammonia and TMIn. This method can be readily used for the growth of the active layers of blue and green light emitting diodes (LEDs). -startpcit--> 2/5 [Back] [Next] [Text/USPTO] [Img,Txt/EPO] [Img/全頁] メール検討依頼書 US6645785 B2グループ III 窒化物化合物を使用する光-を放出する半導体の装置Light-emitting semiconductor device using group III nitride compound Toyoda Gosei Co., Ltd. Inventor(s):Koike, Masayoshi ;Asami, Shinya Application No. 09/909895, Filed 20010723, Issued 20031111 US.Class: 438047 257094 257096 257101 257102 257E33008 257E3303 438022 438046 Int'l Class: H01L03300 Abstract: An emission layer ( 5 ) for a light source device is formed to have a multi-layer structure, doped with an acceptor and a donor impurity. The multi-layer structure may include a quantum well (QW) structure or a multi quantum well (MQW) structure ( 50 ). With such a structure, a peak wavelength of the light source can be controlled, because the distances between atoms of the acceptor and the donor impurities are widened. Several arrangements can be made by, e.g., altering the thickness of each composite layer of the multi-layer structure, altering their composition ratio, forming undoped layer 5 between the impurity doped layers, and so forth. Further, luminous intensity of ultra violet color can be improved, because doping the donor impurity and the acceptor impurity realizes a donor-acceptor emission mechanism and abundant carriers. Several arrangements can be made by, e.g., optimizing the materials of the composite layers, optimizing their composition ratios, optimizing their lattice constants, and so forth to further enhance the luminous intensity of the light source. Priority: JP 7-86083 19950317 JP 7-86084 19950317 JP 7-209182 19950724 JP 7-209183 19950724 Related Applications: 09/346935 08/616884 19960318 Granted: US5945689 A 20010045564 20011129 A1 3/5 [Back] [Next] [Text/USPTO] [Img,Txt/EPO] [Img/全頁] メール検討依頼書 US20030210716 A1 Harmonic ジェネレータ雇用する Harmonic ジェネレータ Harmonic ジェネレータ・イメージ-を表示する装置，イメージ-を成型する装置，光学的貯蔵の装置駆動のための方法Harmonic generator, method for driving harmonic generator, image- displaying apparatus, image-forming apparatus, optical storage apparatus that employs harmonic generator Canon Kabushiki Kaisha Inventor(s):Sakata, Hajime ;Furukawa, Yukio Application No. 10/404057, Filed 20030402, A1 Published 20031113 US.Class: 372022 Int'l Class: H01S00310; Abstract: There is provided a harmonic generator generates high power laser light and can be modulated at high modulation rate. The semiconductor laser emits a first output light when a bias current is supplied, and a second output light when a modulating current is superposed to the bias current. On of the first output lights has a wavelength inside of a wavelength tolerance of phase- matching of the wavelength-converting element. The other has a wavelength outside of the wavelength tolerance of phase-matching. Priority: JP 102702/2002 (PAT. 20020404 4/5 [Back] [Next] [Text/USPTO] [Img,Txt/EPO] [Img/全頁] メール検討依頼書 US20030210643 A1光学的情報記録の媒体Optical information recording medium FUJI PHOTO FILM CO., LTD. Inventor(s):Usami, Yoshihisa Application No. 10/382987, Filed 20030307, A1 Published 20031113 US.Class: 369286 Int'l Class: G11B00370; G11B00584 G11B00726 Abstract: A disk-shaped optical information recording medium comprising a recording layer, a pressure sensitive adhesive layer or an adhesive layer, and a cover sheet in this order on a substrate, and having a central hole, a track pitch of 300 to 600 nm and a groove depth of 40 to 150 nm, for recording and playing back information by being irradiated with a laser light at a wavelength of 500 nm or less, wherein the substrate and the cover sheet are closely adhered via the pressure sensitive adhesive layer or the adhesive layer at a region including a portion of an inner circumference vicinity and an outer circumference vicinity, and the maximum value for the radial length of the closer adhesion region is at least 0.4 mm. Priority: JP 2002-62173 20020307 JP 2002-62174 20020307 JP 2002-62175 20020307 5/5 [Back] [Next] [Text/USPTO] [Img,Txt/EPO] [Img/全頁] メール検討依頼書 US20030210633 A1光学的情報記録の方法および光学的情報記録の媒体Optical information recording method and optical information recording medium FUJI PHOTO FILM CO., LTD. Inventor(s):Usami, Yoshihisa Application No. 10/434280, Filed 20030509, A1 Published 20031113 US.Class: 36905911 Int'l Class: G11B00700; Abstract: An optical information recording method of recording information on an optical information recording medium by irradiation of laser beam, the method comprises the steps of: forming a recording waveform which forms a first pit having a shortest pit length, by using a top pulse having a width narrower than a width of a channel clock cycle; forming a recording waveform which forms a second pit that is second shortest following the first pit, by using the top pulse and a terminal pulse having a width narrower than the width of the channel clock cycle; and forming a recording waveform which forms a pit that is longer than the second pit, by using the top pulse, the terminal pulse, and at least one multipulse formed between the top pulse and the terminal pulse. According to the method described above, pits having stable shape can be formed and thus jitter of reproduced signals can be reduced in an optical information recording medium having a narrow track pitch and high recording density. Priority: JP 2002-133835 20020509 --- End of data re-processed by SGshotEx V11.55 ---